SSPA
Abstract: 500 watt RF amplifier GHz SSPA C Band x band high power amplifier 2.45 Ghz power amplifier 45 dbm SSPA-2227-80 s-band 50 Watt power amplifier SSPA 11 GHz Aethercomm x band sspa
Text: Solid State Power Amplifier High Power, Broadband, S Band Solid State RF Amplifier • • • • Aethercomm P/N SSPA 2227-80 is a high power, S Band, solid state RF amplifier SSPA which covers in excess of 500 MHz of bandwidth from 2.2 to 2.7 GHz. This Class AB SSPA offers
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w7-80
SSPA
500 watt RF amplifier GHz
SSPA C Band
x band high power amplifier
2.45 Ghz power amplifier 45 dbm
SSPA-2227-80
s-band 50 Watt power amplifier
SSPA 11 GHz
Aethercomm
x band sspa
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SSPA C Band
Abstract: power amplifier s band ghz mhz 2.45 Ghz power amplifier x band high power amplifier SSPA
Text: Solid State Power Amplifier High Power, Broadband, S Band Solid State RF Amplifier • • • • • Aethercomm P/N SSPA 2227-80 is a high power, S Band, solid state RF amplifier SSPA which covers in excess of 500 MHz of bandwidth from 2.2 to 2.7 GHz. This Class AB SSPA offers
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RF amplifer
Abstract: SSPA SSPA s-band 49dBm
Text: Solid State Power Amplifier High Power S Band Solid State RF Amplifier Aethercomm P/N SSPA2.2-2.6-80 is a high power, solid state RF amplifer SSPA for use in commercial or military systems. It offers greater than 30 dB of gain from 2.2 GHz to 2.6 GHz. It has a
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-50oC
RF amplifer
SSPA
SSPA s-band
49dBm
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SSPA
Abstract: SSPA C Band SSPA-1722-80 5.7 GHz power amplifier x band high power amplifier base station high power amplifier power amplifier s band ghz mhz
Text: Solid State Power Amplifier High Power, Broadband, L & S Band Solid State RF Amplifier • • • • Aethercomm P/N SSPA 1722-80 is a high power, solid state RF amplifier SSPA which covers in excess of 500 MHz of bandwidth from 1.7 to 2.2 GHz. This Class AB SSPA offers greater than 30
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SSGain40
SSPA
SSPA C Band
SSPA-1722-80
5.7 GHz power amplifier
x band high power amplifier
base station high power amplifier
power amplifier s band ghz mhz
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IBP3134M25 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon Bipolar Technology − Ultra-high fT Part number IBP3134M25 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.4 GHz. Operating under the pulse
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IBP3134M25
IBP3134M25
IBP3134M25-REV-NC-DS-REV-NC
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RF amplifer
Abstract: No abstract text available
Text: Solid State Power Amplifier Broadband S Band Solid State RF Power Amplifier • • • • Aethercomm P/N 30005-201 is a high power, broadband solid state power amplifer SSPA for use in commercial or military systems. It offers greater than 20 dB of gain from 1.0 GHz to 3.2
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S890T
Abstract: S-890 t S 890 T NPN planar RF transistor transistor applications telefun S-890 Planar RF Transistor MA 2831 1S890
Text: S 890 T TELEFUNKEN Semiconductors Silicon NPN planar RF transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figures D High transition frequency Dimensions in mm Absolute Maximum Ratings
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D-74025
S890T
S-890 t
S 890 T
NPN planar RF transistor
transistor applications
telefun
S-890
Planar RF Transistor
MA 2831
1S890
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bfr91
Abstract: No abstract text available
Text: TEMIC BFR91 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain •
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BFR91
BFR91
D-74025
31-Oct-97
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transistor BFR93
Abstract: No abstract text available
Text: Temic BFR93/BFR93R S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain
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BFR93/BFR93R
BFR93
BFR93R
D-74025
31-Oct-97
transistor BFR93
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BFR91A
Abstract: No abstract text available
Text: TEMIC BFR91A S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain
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BFR91A
BFR91A
D-74025
31-Oct-97
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Untitled
Abstract: No abstract text available
Text: TEMIC BFR96TS S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain
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BFR96TS
BFR96TS
D-74025
31-Oct-97
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ML 1557 b transistor
Abstract: lm 1766 ic LM 748
Text: TEMIC BFR90A S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain
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BFR90A
BFR90A
D-74025
31-Oct-97
ML 1557 b transistor
lm 1766
ic LM 748
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lm 538 n ic
Abstract: BFR90
Text: TEMIC BFR90 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain •
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BFR90
BFR90
D-74025
31-Oct-97
lm 538 n ic
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NEL2001
Abstract: NEL2000 DB15F NEL2004 NEL2004F02-24 NEL2012 NEL2012F02-24 NEL2035 NEL2035F03-24 nec microwave
Text: DATA SHEET SILICON POWER TRANSISTOR NEL2000 SERIES NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2000 series of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PC N/PC S base station applications.
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NEL2000
NEL200101-24
NEL2004F02-24
NEL2012F02-24
NEL2035F03-24
NEL2001
DB15F
NEL2004
NEL2004F02-24
NEL2012
NEL2012F02-24
NEL2035
NEL2035F03-24
nec microwave
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zo 107 NA P 611
Abstract: BFR96 L 0403 817 BFR96T
Text: TEMIC BFR96T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band an tenna amplifier. Features • High power gain
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BFR96T
BFR96T
D-74025
31-Oct-97
zo 107 NA P 611
BFR96
L 0403 817
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Untitled
Abstract: No abstract text available
Text: Temic BFQ65 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. M Applications RF-amplifier up to GHz range specially for wide band an tenna amplifier. Features • High power gain
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BFQ65
21-Mar-97
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transistor MAR 543
Abstract: transistor BFR91 IPS240 BFR91 transistor transistor mar 839 Telefunken u 439 transistor MAR 439
Text: Temic BFR91 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • • • High power gain Low noise figure High transition frequency BFR91 Marking: BFR91
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BFR91
BFR91
24-Mar-97
transistor MAR 543
transistor BFR91
IPS240
BFR91 transistor
transistor mar 839
Telefunken u 439
transistor MAR 439
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BFQ65
Abstract: mar 739 LINEAR/525/OS/LM01A/MAR 527 transistor
Text: Temic BFQ65 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF-amplifier up to GHz range specially for wide band an tenna amplifier. Features • • • High power gain
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BFQ65
21-Mar-97
BFQ65
mar 739
LINEAR/525/OS/LM01A/MAR 527 transistor
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BFQ65
Abstract: mar 806 transistor MAR 826 mar 739
Text: Tem ic BFQ65 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications RF-amplifier up to GHz range specially for wide band an tenna amplifier. Features • High power gain
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bfq65
21-Mar-97
mar 806
transistor MAR 826
mar 739
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mar 618
Abstract: BFR93 transistor BFR93 Telefunken u 267 Marking A2 SOT-23 MAR 618 transistor
Text: Temic BFR93/BFR93R S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • • • High power gain Low noise figure High transition frequency R n I—J B .
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BFR93/BFR93R
BFR93
BFR93R
26-Mar-97
mar 618
transistor BFR93
Telefunken u 267
Marking A2 SOT-23
MAR 618 transistor
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AM/SSC 9500 ic data
Abstract: No abstract text available
Text: DATA SHEET_ GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEA TU R E S • High Power Gain: Gs = 5.0 dB TYP. @ f = 12 GHz • Gate Length : Lg • Gate Width : Wg • 4-pin super minimold •
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NE72218
NE72218-T1
NE72218-T2
VP15-00-3
WS60-00-1
P12750EJ2V0D
AM/SSC 9500 ic data
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Transistor BFR 96
Abstract: TRANSISTOR BC 157 TRANSISTOR BC 158 transistor K 3596 TRANSISTOR as BC 158 BFR96S transistor bc 238 b silicon npn planar rf transistor sot 143 transistor B 722 Telefunken u 237
Text: TELEFUNKEN ELECTRONIC file D • fiSSOO^b 0 0 0 5 3 0 3 T BFR 96 S electronic Creative Technologies Silicon NPN Planar RF Transistor Applications; RF-amplifier up to GHz range specially for wide band antenna amplifier Features: • High power gain • Low noise figures
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ft-11
569-GS
000s154
hal66
if-11
Transistor BFR 96
TRANSISTOR BC 157
TRANSISTOR BC 158
transistor K 3596
TRANSISTOR as BC 158
BFR96S
transistor bc 238 b
silicon npn planar rf transistor sot 143
transistor B 722
Telefunken u 237
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Untitled
Abstract: No abstract text available
Text: Tem ic S 392 T TELEFUNKEN Semiconductors Silicon NPN planar RF transistor Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency Dimensions in mm technical drawings according to DIN
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D014074
500MHz,
800MHz
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BFR93AW
Abstract: No abstract text available
Text: Temic BFR93AW S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications Wide band amplifier up to GHz range. Features • • High power gain High transition frequency •
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BFR93AW
D-74025
-Nov-97
BFR93AW
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