cfl low loss drive
Abstract: phe13009 transistor BUJ100 DIMMER BUJ100 PHE13007 high power bipolar transistor selection Electronic ignitors for HID lamp circuits High power planar Transformer transistor BUT
Text: NXP high voltage power bipolar transistors BUJ & PHx series High voltage power bipolar transistors for lighting Our high voltage power bipolar transistors are part of our industry-leading portfolio for energy-efficient lighting. Designed to support electronic ballast and transformer
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vol92
OT186A
O220AB
OT428)
cfl low loss drive
phe13009
transistor BUJ100
DIMMER
BUJ100
PHE13007
high power bipolar transistor selection
Electronic ignitors for HID lamp circuits
High power planar Transformer
transistor BUT
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AYW marking code IC
Abstract: BFr pnp transistor MMJT350T1G T350 306 marking code transistor
Text: MMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • High Collector−Emitter Sustaining Voltage −
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MMJT350T1G
OT-223
MMJT350T1/D
AYW marking code IC
BFr pnp transistor
MMJT350T1G
T350
306 marking code transistor
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Untitled
Abstract: No abstract text available
Text: MMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • • • • • High Collector−Emitter Sustaining Voltage
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MMJT350T1G
AEC-Q101
OT-223
MMJT350T1/D
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"CHAPTER 1 Introduction to Power Semiconductors"
Abstract: schematic diagram on line UPS 10kva sith thyristor "static induction thyristor" "Power Semiconductor Applications" Philips Power Semiconductor Applications Philips Semiconductors ups schematic 10kva static induction Thyristor CHAPTER 1 Introduction to Power Semiconductors SIT Static Induction Transistor
Text: Introduction Power Semiconductor Applications Philips Semiconductors CHAPTER 1 Introduction to Power Semiconductors 1.1 General 1.2 Power MOSFETS 1.3 High Voltage Bipolar Transistors 1 Introduction Power Semiconductor Applications Philips Semiconductors General
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BU931
Abstract: BU931P BU931T JESD97 W313 High voltage ignition coil driver NPN POWER DARLINGTON TRANSISTORS
Text: BU931 BU931P, BU931T High voltage ignition coil driver NPN power Darlington transistors Features • Very rugged Bipolar technology ■ High operating junction temperature ■ Wide range of packages Applications ■ 1 2 2 1 TO-247 Description The devices are bipolar Darlington transistors
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BU931
BU931P,
BU931T
O-247
O-220
JESD97.
BU931
BU931P
BU931T
JESD97
W313
High voltage ignition coil driver
NPN POWER DARLINGTON TRANSISTORS
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rds035
Abstract: rds035l03 MMST8598 fet MK10 SM6K2 2SK3065 RHU002N06 RK7002 equivalent bc847bc 2sd198
Text: Standard Transistor Product Solutions www.rohm.co.uk www.rohm.co.uk Small signal type MOSFET RHU002N06 Medium Power Bipolar Transistors 0.5W-1.2W MPT3 Package Description CPT3 MPT3 Item Application Driver Low VCE (sat) High hFE High voltage SW High voltage-High speed SW
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RHU002N06
2SD2167
56to270
2SB1132
2SD1664
82to390
2SB1188
2SD1766
2SB1182
2SD1758
rds035
rds035l03
MMST8598
fet MK10
SM6K2
2SK3065
RHU002N06
RK7002 equivalent
bc847bc
2sd198
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BU108
Abstract: BDT3 2SC1943 2SC1419 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE8503A* Advance Information SWITCHMODE Series *Motorola Preferred Device NPN Bipolar Power Transistor POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS — BVCES 80 WATTS The MJE8503A transistor is designed for high voltage, high speed, power switching
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MJE8503A*
MJE8503A
WATT32
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
BU108
BDT3
2SC1943
2SC1419
BU326
BU100
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60Ghz
Abstract: AN1509 60GHz transistor
Text: AN1509 APPLICATION NOTE A VERY HIGH EFFICIENCY SILICON BIPOLAR TRANSISTOR F. Carrara - A. Scuderi - G. Tontodonato - G. Palmisano 1. ABSTRACT The potential of a high-performance low-cost silicon bipolar technology for high-efficiency low-voltage RF power amplifiers was explored. To this end, a unit power cell was developed by optimizing layout design,
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AN1509
60Ghz
AN1509
60GHz transistor
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MJL4281A
Abstract: MJL4302A mjl 350 mjl4302
Text: MJL4281A NPN MJL4302A (PNP) Preferred Device Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are PowerBaset power transistors for high power audio. • 350 V Collector−Emitter Sustaining Voltage • Gain Complementary:
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MJL4281A
MJL4302A
MJL4281A
MJL4302A
MJL4281A/D
mjl 350
mjl4302
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mjl4281
Abstract: MJL4302A mjl4302 MJL428
Text: MJL4281A NPN MJL4302A (PNP) Preferred Device Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are PowerBaset power transistors for high power audio. • 350 V Collector−Emitter Sustaining Voltage • Gain Complementary:
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MJL4281A
MJL4302A
MJL4281A
MJL4302A
mjl4281
mjl4302
MJL428
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Untitled
Abstract: No abstract text available
Text: FJAFS1510A ESBCTM Rated NPN Power Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, SMPS, HV Industrial Power Supplies
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FJAFS1510A
FJAFS1510A
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MJL4302AG
Abstract: mjl4302a mjl4281 MJL4281AG MJL4281A SEC1100 ALL TRANSISTORS
Text: MJL4281A NPN MJL4302A (PNP) Preferred Device Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are PowerBaset power transistors for high power audio. Features • 350 V Collector−Emitter Sustaining Voltage • Gain Complementary:
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MJL4281A
MJL4302A
MJL4281A
MJL4302A
O-264
MJL4281A/D
MJL4302AG
mjl4281
MJL4281AG
SEC1100
ALL TRANSISTORS
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NT 407 F TRANSISTOR
Abstract: NT 407 F power transistor motorola bipolar transistor MJE8503A Motorola Bipolar Power Transistor Data bipolar transistor td tr ts tf
Text: MOTOROLA Order this document by MJE8503A/D SEMICONDUCTOR TECHNICAL DATA MJE8503A* Advance Information SWITCHMODE Series *Motorola Preferred Device NPN Bipolar Power Transistor POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS — BVCES 80 WATTS The MJE8503A transistor is designed for high voltage, high speed, power switching
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MJE8503A/D
MJE8503A*
MJE8503A
MJE8503A/D*
NT 407 F TRANSISTOR
NT 407 F power transistor
motorola bipolar transistor
Motorola Bipolar Power Transistor Data
bipolar transistor td tr ts tf
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Untitled
Abstract: No abstract text available
Text: BU941ZP BU941ZPFI High voltage ignition coil driver NPN power Darlington transistors Features • Very rugged bipolar technology ■ Built in clamping Zener ■ High operating junction temperature ■ Fully insulated package U.L. compliant for easy mounting
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BU941ZP
BU941ZPFI
O-247
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bu941zp
Abstract: Electronic package to218 BU941ZPFI BU941ZFI High voltage ignition coil driver
Text: BU941ZP BU941ZPFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON TRANSISTORS n n n n VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING Figure 1: Package
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BU941ZP
BU941ZPFI
O-218
ISOWATT218
bu941zp
Electronic package to218
BU941ZPFI
BU941ZFI
High voltage ignition coil driver
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transistor BD 736
Abstract: TRANSISTOR bd 737
Text: MMJT350T1 Bipolar Power Transistors PNP Silicon . . . designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. • High Collector−Emitter Sustaining Voltage − VCEO sus =300 Vdc @ IC
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MMJT350T1
OT-223
transistor BD 736
TRANSISTOR bd 737
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UPC1678GV-E1-A
Abstract: 2005 az power supply UPC1678GV UPC1678GV-E1 NEC upc1678gv-e1-a
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC1678GV 2 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER FEATURES HIGH OUTPUT POWER: +18 dBm PSAT • • • HIGH POWER GAIN: 23 dB TYP at 500 MHz NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE EXCELLENT FREQUENCY RESPONSE:
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UPC1678GV
UPC1678GV
UPC1678GV-E1-A
2005 az power supply
UPC1678GV-E1
NEC upc1678gv-e1-a
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BUD42D
Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Text: MOTOROLA Order this document by BUD42D/D SEMICONDUCTOR TECHNICAL DATA Designer's BUD42D Data Sheet High Speed, High Gain Bipolar POWER TRANSISTORS 4 AMPERES 650 VOLTS 25 WATTS NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression
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BUD42D/D
BUD42D
BUD42D
BUD42D:
DeviceBUD42D/D
MJE210
MPF930
MTP12N10
MTP8P10
MUR105
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2sA1943N
Abstract: 2sc5200 2SC5200N
Text: 2SA1943N Bipolar Transistors Silicon PNP Triple-Diffused Type 2SA1943N 1. Applications • Power Amplifiers 2. Features 1 High collector voltage: VCEO = -230 V (min) (2) Complementary to 2SC5200N (3) Recommended for 100-W high-fidelity audio frequency amplifier output stage
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2SA1943N
2SC5200N
2sA1943N
2sc5200
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Untitled
Abstract: No abstract text available
Text: MJL4281A NPN MJL4302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are power transistors for high power audio. Features • 350 V Collector−Emitter Sustaining Voltage • Gain Complementary: • • • • Gain Linearity from 100 mA to 5 A
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MJL4281A
MJL4302A
MJL4281A
MJL4302A
O-264
MJL4281A/D
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fairchild power bjt
Abstract: fjp2160d fdc6551 cascode mosfet switching ESBC j2160 J2160D C 1008 y transistor input output bjt npn transistor
Text: FJP2160D ESBCTM Rated NPN Silicon Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, HV Industrial Power Supplies • Motor Driver and Ignition Driver
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FJP2160D
fairchild power bjt
fdc6551
cascode mosfet switching
ESBC
j2160
J2160D
C 1008 y transistor
input output bjt npn transistor
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Untitled
Abstract: No abstract text available
Text: Back to Bipolar Power Transistors NSA5019 HIGH-POWER TRANSISTOR MAXIMUM RATINGS RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Peak Base Current Total Device Dissipation @ Tc = 25#C Derate Above 25#C
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NSA5019
2N5019
300ns,
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Untitled
Abstract: No abstract text available
Text: Back to Bipolar Power Transistors BUT100 PNP SILICON POWER TRANSISTOR • • HIGH VOLTAGE LOW VCE SATURATION @ IOOa MAXIMUM RATINGS UNITS SYMBOL BUT100 RATINGS Vdc 125 Collector-Emitter Voltage ^CEO Vdc 300 Collector-Base Voltage VcB Vdc 5.0 Emitter-Base Voltage
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OCR Scan
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BUT100
BUT100
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Untitled
Abstract: No abstract text available
Text: Back to Bipolar Power Transistors MJEC340 CHIP MEDIUM POWER NPN 0.5 AMPERE SILICON TRANSISTOR POWER TRANSISTOR NPN SILICON 300 VOLTS .useful for high-voltage general purpose applications. - Suitable for Transformerless, Line-Operated Equipment - Thermopad Construction Provides High Power Dissipation Rating
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OCR Scan
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MJEC340
3kA/10kA/10kA
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