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    POWER CONSUMPTION OF FCBGA Search Results

    POWER CONSUMPTION OF FCBGA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd

    POWER CONSUMPTION OF FCBGA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Flow for Calculating Power Consumption Estimating total power consumption of chip Note 1 Changing package or circuit NG Is allowable power consumption of package satisfied? OK Changing frequency or circuit NG Is internal power consumption limit satisfied? Note 2


    Original     		VDD15/GND VDD15/GND PD66205, PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06–20212–2E Semicustom CMOS Standard Cell CS302 Series • DESCRIPTION The CS302 series of 40 nm standard cells is a line of CMOS ASICs that satisfy demands for lower power consumption, higher speed and higher integration.


    Original     		CS302 CS201 PDF

    CS251

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS601-00003-0v01-E Semicustom CMOS Standard Cell CS251 Series • DESCRIPTION The CS251 series of 55 nm standard cells is a line of CMOS ASICs that satisfy demands for lower power consumption, higher speed and higher integration.


    Original     		DS601-00003-0v01-E CS251 CS201 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS601-00001-2v0-E Semicustom CMOS Standard Cell CS401 Series • DESCRIPTION The CS401 series of 28 nm standard cells is a line of CMOS ASICs that satisfy demands for lower power consumption, higher speed and higher integration.


    Original     		DS601-00001-2v0-E CS401 CS302 PDF

    1EEE1394

    Abstract: rom multiplier CS81
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20206-1E Semicustom CMOS Standard cell array CS81 Series • DESCRIPTION The CS81 series of 0.18 Am CMOS standard cell arrays is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.


    OCR Scan     		PDF

    CS81

    Abstract: DS06-20206-1E 3813K 0.18-um CMOS standard cell library inverter
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20206-1E Semicustom CMOS Standard cell array CS81 Series • DESCRIPTION The CS81 series of 0.18 µm CMOS standard cell arrays is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.


    Original     		DS06-20206-1E CS81 DS06-20206-1E 3813K 0.18-um CMOS standard cell library inverter PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS601-00002-0v01-E Semicustom CMOS Standard Cell CS402 Series • DESCRIPTION The CS402 series of 28 nm standard cells is a line of CMOS ASICs of high-performance with minimum power consumption. By the adoption of core transistors with high current drivability operating at low voltages, the operating


    Original     		DS601-00002-0v01-E CS402 CS401 PDF

    F0706

    Abstract: MoSys CS201 MoSys 1T sram "Single-Port RAM"
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20211-1E Semicustom CMOS Standard Cell CS201 Series • DESCRIPTION The CS201 series of 65 nm standard cells is a line of CMOS ASICs that satisfy demands for lower power consumption and higher integration. These cells offer the minimum level of leakage current in the semiconductor


    Original     		DS06-20211-1E CS201 F0706 F0706 MoSys MoSys 1T sram "Single-Port RAM" PDF

    f9906

    Abstract: xl 1225 CE81 Fujitsu inverter 0.18-um CMOS standard cell library inverter
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20110-1E Semicustom CMOS Macro embedded type cell array CE81 Series • DESCRIPTION The CE81 series of 0.18 µm CMOS macro-embedded cell arrays is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.


    Original     		DS06-20110-1E f9906 xl 1225 CE81 Fujitsu inverter 0.18-um CMOS standard cell library inverter PDF

    1EEE1394

    Abstract: H 735 b1369 xl 1225 CE81
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20110-1E Semicustom CMOS Macro embedded type cell array CE81 Series • DESCRIPTION The CE81 series of 0.18 Am CMOS macro-embedded cell arrays is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.


    OCR Scan     		PDF

    DS06-20206-1E

    Abstract: xl 1225 transistor CS81 0.18-um CMOS standard cell library inverter
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS06-20206-1E Semicustom CMOS Standard cell array CS81 Series • DESCRIPTION The CS81 series of 0.18 µm CMOS standard cell arrays is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.


    Original     		DS06-20206-1E DS06-20206-1E xl 1225 transistor CS81 0.18-um CMOS standard cell library inverter PDF

    DS06-20112-1E

    Abstract: CE77 register file 0.25-um standard cell library
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20112-1E Semicustom CMOS Embedded array CE77 Series • DESCRIPTION The CE77 series 0.25 µm CMOS embedded array is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.


    Original     		DS06-20112-1E DS06-20112-1E CE77 register file 0.25-um standard cell library PDF

    DS06-20112-1E

    Abstract: CE77
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20112-1E Semicustom CMOS Embedded array CE77 Series • DESCRIPTION The CE77 series 0.25 µm CMOS embedded array is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.


    Original     		DS06-20112-1E F0204 DS06-20112-1E CE77 PDF

    f9906

    Abstract: CE81 0.18-um CMOS standard cell library inverter
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS06-20110-1E Semicustom CMOS Macro embedded type cell array CE81 Series • DESCRIPTION The CE81 series of 0.18 µm CMOS macro-embedded cell arrays is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.


    Original     		DS06-20110-1E f9906 CE81 0.18-um CMOS standard cell library inverter PDF

    CS91

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS06-20208-3Ea Semicustom CMOS Standard cell array CS91 Series • DESCRIPTION The CS91 series 0.11 m CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 48 million gates which have a gate delay time of 16


    Original     		DS06-20208-3Ea CS91 PDF

    CS91 Series

    Abstract: CS91 fujitsu inverter air F0609
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20208-3E Semicustom CMOS Standard cell array CS91 Series • DESCRIPTION The CS91 series 0.11 µm CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 48 million gates which have a gate delay time of 16


    Original     		DS06-20208-3E F0609 CS91 Series CS91 fujitsu inverter air F0609 PDF

    CS91

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20208-1E Semicustom CMOS Standard cell array CS91 Series • DESCRIPTION The CS91 series 0.11 µm CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 48 million gates which have a gate delay time of 16


    Original     		DS06-20208-1E F0207 CS91 PDF

    CS81

    Abstract: 0.18-um CMOS standard cell library inverter
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20206-5E Semicustom CMOS Standard cell CS81 Series • DESCRIPTION The CS81 series 0.18 µm CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 40 million gates which have a gate delay time of 11 ps, resulting in both integration


    Original     		DS06-20206-5E 15ces F0703 CS81 0.18-um CMOS standard cell library inverter PDF

    CS81

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS06-20206-5Ea Semicustom CMOS Standard cell CS81 Series • DESCRIPTION The CS81 series 0.18 m CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 40 million gates which have a gate delay time of 11 ps, resulting in both integration


    Original     		DS06-20206-5Ea CS81 PDF

    ARM1176JZF-S

    Abstract: ARM1176JZF 90 nm CMOS CS101 ARM1176 fujitsu inverter air "Single-Port RAM"
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS06-20210-3Ea Semicustom CMOS Standard Cell CS101 Series • DESCRIPTION CS101 series, a 90 nm standard cell product, is a CMOS ASIC that satisfies user’s demands for lower power consumption and higher speed. The leakage current of the transistors is the minimum level in the industry. Three


    Original     		DS06-20210-3Ea CS101 ARM1176JZF-S ARM1176JZF 90 nm CMOS ARM1176 fujitsu inverter air "Single-Port RAM" PDF

    f0602

    Abstract: CS101 "Single-Port RAM"
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20210-2E Semicustom CMOS Standard Cell CS101 Series • DESCRIPTION CS101 series, a 90 nm standard cell product, is a CMOS ASIC that satisfies user’s demands for lower power consumption and higher speed. The leakage current of the transistors is the minimum level in the industry. Three


    Original     		DS06-20210-2E CS101 F0602 f0602 "Single-Port RAM" PDF

    usb schema

    Abstract: schema sata data to usb CB-55 fcbg nec cb core
    Text: CB-55 55 nm Features >> 55 nm technology >> Up to 7 metal layers >> Very high gate count: 200 million gates raw >> 1.0 and 1.2 V core voltage optimized architecture >> Extremely low power consumption down to 0.29 nW/MHz/gate >> Extremely low leakage current using high-k transistors over silicon


    Original     		CB-55 CB-55 usb schema schema sata data to usb fcbg nec cb core PDF

    cb-90 nec

    Abstract: edram nec 90 nm CMOS NEC 426 nec cb core NEC Electronics America
    Text: CB-90 90 nm >> 90 nm technology >> Up to 9 metal layers >> Very high speed >> Gate count up to 100 million gates >> 1.0 V core voltage >> Power consumption down to 0.51 nW/MHz/gate >> I/O voltage options: 1.8 V, 2.5 V, 3.3 V >> F lexible I/O structure supports USB,


    Original     		CB-90 CB-90 A19184EE1V1PL00 cb-90 nec edram nec 90 nm CMOS NEC 426 nec cb core NEC Electronics America PDF

    VT1620A

    Abstract: vt1723 vt6113 VT1724 VT1730 VIA VT1620A VT1708S VT1620 VT1610 vt6210l
    Text: Vol. 2009 Issue 1 Compact Ultra small form factor and rich integration enabling rapid development of intelligent devices Efficient Fanless Flexible Advanced processor architecture and platform-centric design for higher performance-per-watt Industry-leading low power,


    Original     		PDF