RF Amplifier 500w
Abstract: amplifier 400W 5310 064R D1030UK
Text: TetraFET D1030UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K
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D1030UK
175MHz
RF Amplifier 500w
amplifier 400W
5310
064R
D1030UK
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UT85 coaxial
Abstract: 43 toroid core UT85 coax UT85 COAXIAL CABLE D10-40 108MHz D1040UK siemens plc UT85 50 064R
Text: TetraFET D1040UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 28V – 108MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K
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D1040UK
108MHz
160mm
UT85 coaxial
43 toroid core
UT85 coax
UT85 COAXIAL CABLE
D10-40
108MHz
D1040UK
siemens plc
UT85 50
064R
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PDF
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d5030
Abstract: D5030UK 064R
Text: TetraFET D5030UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 50V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN
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D5030UK
175MHz
13GLURQFRUH
D5030UK
175MHz
d5030
064R
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PDF
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Untitled
Abstract: No abstract text available
Text: TetraFET D5030UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 50V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN
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D5030UK
175MHz
D5030UK
175MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: TetraFET D1040UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls G (typ) ! H P (2 pls) A D " # GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W 28V 108MHz PUSHPULL E (4 pls) F I FEATURES SIMPLIFIED AMPLIFIER DESIGN N O M J K SUITABLE FOR BROAD BAND APPLICATIONS
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D1040UK
108MHz
160mm
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PDF
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Untitled
Abstract: No abstract text available
Text: TetraFET D1040UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 28V – 108MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN
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D1040UK
108MHz
B62152A1X1
160mm
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PDF
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RF amplifier output 400W input 10 w
Abstract: 22pf 32V siemens PLC
Text: TetraFET D1040UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 28V – 108MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K
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D1040UK
108MHz
2B62152A1X1
160mm
RF amplifier output 400W input 10 w
22pf
32V siemens PLC
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PDF
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D1040UK
Abstract: 108MHz 064R UT85 power dissipation fet 400W
Text: TetraFET D1040UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 28V – 108MHz PUSH–PULL E (4 pls) F FEATURES I • SIMPLIFIED AMPLIFIER DESIGN N O M J K
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D1040UK
108MHz
160mm
D1040UK
108MHz
064R
UT85
power dissipation fet 400W
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PDF
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Untitled
Abstract: No abstract text available
Text: TetraFET D1030UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN
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D1030UK
175MHz
120mm
UT-085,
3x39pF
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PDF
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D1030UK
Abstract: 7808 cv
Text: TetraFET D1030UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K
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D1030UK
175MHz
120mm
UT-085,
3x39pF
D1030UK
7808 cv
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PDF
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UT-085
Abstract: D1030UK UT-034-25 064R ut 7808 D1030 7808 cv
Text: TetraFET D1030UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN
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D1030UK
175MHz
120mm
UT-085,
3x39pF
UT-085
D1030UK
UT-034-25
064R
ut 7808
D1030
7808 cv
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Untitled
Abstract: No abstract text available
Text: FLL107ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=29.5dBm Typ. High Gain: G1dB=13.5dB (Typ.) High PAE: hadd=47% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL107ME is a Power GaAs FET that is specifically designed to
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FLL107ME
FLL107ME
FCSI0598M200
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Untitled
Abstract: No abstract text available
Text: FLU10XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: hadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the
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FLU10XM
FLU10XM
FCSI0598M200
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Zener Diode 3v 400mW
Abstract: reverse phase dimmer dimmer CIRCUITS FET Triac based Lamp Dimmer power control triac inductor noise suppression triac dimmer LED schematic circuit diagram of flyback PFC converter for LED INFINEON TVS diode process PWM circuit dimmer audio transformer calculation
Text: Texas Instruments Application Note 2090 Steve Solanyk November 8, 2011 Introduction Key Features This demonstration board highlights the performance of a LM3448 based Flyback LED driver solution that can be used to power a single LED string consisting of seven to eleven
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LM3448
AN-2090
Zener Diode 3v 400mW
reverse phase dimmer
dimmer CIRCUITS FET
Triac based Lamp Dimmer power control
triac inductor noise suppression
triac dimmer LED
schematic circuit diagram of flyback PFC converter for LED
INFINEON TVS diode process
PWM circuit dimmer
audio transformer calculation
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PDF
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GaAs FET HEMT Chips
Abstract: Fujitsu 511 FLC08
Text: FLC087XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 28.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: hadd = 31.5%(Typ.) Proven Reliability Drain DESCRIPTION The FLC087XP chip is a power GaAs FET that is designed for general
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FLC087XP
FLC087XP
FCSI0598M200
GaAs FET HEMT Chips
Fujitsu 511
FLC08
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PDF
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marking w4s
Abstract: power dissipation fet 400W C2481 transistor x vs NPN transistor BCR400 Q62702-C2481 400w transistor TA-1004 "NPN Transistor"
Text: BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from
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200mA
Q62702-C2481
OT-343
Nov-27-1996
BCR400
marking w4s
power dissipation fet 400W
C2481
transistor x vs
NPN transistor
BCR400
400w transistor
TA-1004
"NPN Transistor"
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PDF
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circuit for flyback transformer driver
Abstract: zener diode 6w
Text: Application Report SNOA554C – October 2011 – Revised May 2013 AN-2090 LM3448 -120VAC, 6W Isolated Flyback LED Driver .
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SNOA554C
AN-2090
LM3448
-120VAC,
circuit for flyback transformer driver
zener diode 6w
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PDF
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IC 555
Abstract: IC555 IC 555 as temperature controller ic 555 timer working IC 555 working 43K10 power dissipation fet 400W
Text: BCR 400W Active Bias Controller 3 Characteristics 4 • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V 2 Application notes 1 • Stabilizing bias current of NPN transistors and
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200mA
VPS05605
EHA07188
OT-343
EHA07217
EHA07218
Feb-24-1999
EHA07219
EHA07191
IC 555
IC555
IC 555 as temperature controller
ic 555 timer working
IC 555 working
43K10
power dissipation fet 400W
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FET differential amplifier circuit
Abstract: fet differential amplifier schematic MSA66 brush MOTOR CONTROL
Text: PULSE WIDTH MODULATION AMPLIFIER MSA66 HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • 10.8V to 80V Supply Voltage (7.5-16V VCC ) • 5A continuous output current • 4-quadrant PWM • Anti Shoot-Through Design
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MSA66
546-APEX
MSA66U
FET differential amplifier circuit
fet differential amplifier schematic
MSA66
brush MOTOR CONTROL
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme, ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from
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OCR Scan
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200mA
Q62702-C2481
OT-343
E35b05
012Gflb3
BCR400
flE35bQ5
012Dflb4
EHA07219
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from
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OCR Scan
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200mA
Q62702-C2481
BCR400W
OT-343
Ufl235b05
BCR400
EHAD7217
3235b05
EHA07219
0235tiGS
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PDF
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MARKING CODE R7 RF TRANSISTOR
Abstract: transistor B 764 NPN transistor marking W4s marking transistor RF
Text: SIEMENS BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from
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OCR Scan
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200mA
Q62702-C2481
OT-343
BCR400
MARKING CODE R7 RF TRANSISTOR
transistor B 764
NPN transistor
marking W4s
marking transistor RF
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d3s diode
Abstract: d3s schottky Ic d3s DIODE D3S 90
Text: Audio B an d w id th Designs 20W - 400W M ultimedia, Autom otive, Home Theater m/^ Half Bridge and Full Bridge Features: 20Hz - 22kHz Bandwidth >90% Efficiency ^ ^ <0.05% THD >95db SNR FCC Class-B/CE Com pliant COMING SOON A Full Portfolio of Audio Components for Audio Switching Pow er Supplies
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OCR Scan
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22kHz
HUF75345P3
HUF75344P3
HRF3205
HUF75343P3
HUF75339P3
HUF75337P3
HUF75333P3
HUF75329P3
HUF75345S3/S3S
d3s diode
d3s schottky
Ic d3s
DIODE D3S 90
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c2481
Abstract: transistor MARKING CODE TX marking W4s TRANSISTOR 117a BCR400 BCR400W Q62702-C2481 103 ma siemens gaas fet npn marking tx
Text: SIEMENS BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V A pplication notes • Stabilizing bias current of NPN transistors and FETs from
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OCR Scan
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200mA
BCR400W
Q62702-C2481
OT-343
BCR400
235b05
00aTfl05
EHA07219
c2481
transistor MARKING CODE TX
marking W4s
TRANSISTOR 117a
BCR400
103 ma
siemens gaas fet
npn marking tx
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