TO 220 Package High current N CHANNEL MOSFET
Abstract: TSM7N65 MOSFET 50V 100A TO-220 ENHANCEMENT MOSFET pin diagram of MOSFET "MARKING DIAGRAM" 25V 1A power MOSFET TO-220 circuit diagram of mosfet based power supply N-CHANNEL ENHANCEMENT MODE POWER MOSFET n-channel mosfet transistor
Text: TSM7N65 650V N-Channel Power MOSFET ITO-220 TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 650 1.2 @ VGS =10V 3 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM7N65
ITO-220
O-220
TSM7N65
TO 220 Package High current N CHANNEL MOSFET
MOSFET 50V 100A TO-220
ENHANCEMENT MOSFET
pin diagram of MOSFET
"MARKING DIAGRAM"
25V 1A power MOSFET TO-220
circuit diagram of mosfet based power supply
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
n-channel mosfet transistor
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6A 650V MOSFET
Abstract: MOSFET 50V 100A TO-220 TSM7N65
Text: TSM7N65 650V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 650 1.2 @ VGS =10V 3 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM7N65
ITO-220
O-220
TSM7N65
6A 650V MOSFET
MOSFET 50V 100A TO-220
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6A 650V MOSFET
Abstract: mosfet 650v
Text: TSM7N65 650V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) 650 1.2 @ VGS =10V ID (A) 6.4 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM7N65
O-220
ITO-220
TSM7N65
6A 650V MOSFET
mosfet 650v
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A09 MOSFET
Abstract: TSM7N65 ITO-220 6A 650V MOSFET 32nC
Text: TSM7N65 650V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 650 1.2 @ VGS =10V 3 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM7N65
ITO-220
O-220
TSM7N65
32nerty
A09 MOSFET
ITO-220
6A 650V MOSFET
32nC
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mosfet "marking code 44"
Abstract: TSM2NB60CP
Text: TSM2NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description TO-251 (IPAK) The TSM2NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This
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TSM2NB60
O-220
ITO-220
O-251
O-252
TSM2NB60
TSM2NB60CH
TSM2NB60CP
TSM2NB60CZ
O-251
mosfet "marking code 44"
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Untitled
Abstract: No abstract text available
Text: TSM2NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description TO-251 (IPAK) The TSM2NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This
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TSM2NB60
O-220
ITO-220
O-251
TSM2NB60
O-252
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N70 Power MOSFET 7A, 700V N-CHANNEL POWER MOSFET 1 FEATURES * RDS ON < 1.6Ω @VGS = 10 V * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness TO-220F TO-220 DESCRIPTION
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O-220F
O-220
O-220F2
O-220F1
O-220F3
QW-R502-103.
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B11 marking code
Abstract: 1A 700V MOSFET mosfet 700V 2A
Text: TSM2N70 700V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM2N70
O-220
O-251
O-252
TSM2N70
B11 marking code
1A 700V MOSFET
mosfet 700V 2A
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Untitled
Abstract: No abstract text available
Text: TSM6N50 500V N-Channel Power MOSFET ITO-220 TO-252 DPAK TO-251 (IPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 1.4 @ VGS =10V 2.8 General Description The TSM6N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM6N50
ITO-220
O-252
O-251
TSM6N50
TSM6N50CI
TSM6N50CP
TSM6N50CH
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POWER MOSFET 4600
Abstract: 1A 700V MOSFET
Text: TSM2N70 700V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM2N70
O-220
O-251
O-252
TSM2N70
POWER MOSFET 4600
1A 700V MOSFET
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TSM6N50
Abstract: No abstract text available
Text: TSM6N50 500V N-Channel Power MOSFET ITO-220 TO-252 DPAK TO-251 (IPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 1.4 @ VGS =10V 2.8 General Description The TSM6N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM6N50
ITO-220
O-252
O-251
TSM6N50
TSM6N50CI
TSM6N50CP
TSM6N50CH
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SSP2N90A
Abstract: mosfet vgs 5v
Text: SSP2N90A Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS on = 7.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 2 A Improved Gate Charge Extended Safe Operating Area TO-220 θ Lower Leakage Current : 25 µA (Max.)
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SSP2N90A
O-220
SSP2N90A
mosfet vgs 5v
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SSP1N60A
Abstract: No abstract text available
Text: SSP1N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS on = 12 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 1 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 25 µA (Max.) @ VDS = 600V
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SSP1N60A
O-220
SSP1N60A
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SSP2N60A
Abstract: No abstract text available
Text: SSP2N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS on = 5.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 2 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 25 µA (Max.) @ VDS = 600V
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SSP2N60A
O-220
SSP2N60A
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Untitled
Abstract: No abstract text available
Text: TSM6N50 500V N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 500 V RDS(on) (max) 1.4 Ω Qg 25 nC TO-252 (DPAK) Features Block Diagram ● Low RDS(ON) 1.4Ω (Max.)
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ITO-220
O-251
O-252
TSM6N50CI
50pcs
TSM6N50CP
TSM6N50CH
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TSM2N60CP
Abstract: MOSFET 600V 1A 2a 400v mosfet to-251 TSM2N60 TSM2N60CH
Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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TSM2N60
O-220
O-251
O-252
TSM2N60
TSM2N60CP
MOSFET 600V 1A
2a 400v mosfet to-251
TSM2N60CH
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25V 1A power MOSFET TO-220
Abstract: mosfet 600V 2A TO-252 N-channel MOSFET MOSFET TO-220
Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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TSM2N60
O-220
O-251
O-252
TSM2N60
25V 1A power MOSFET TO-220
mosfet 600V 2A
TO-252 N-channel MOSFET
MOSFET TO-220
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18BSC
Abstract: TSM2N60 TSM2N60CH TSM2N60CP
Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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TSM2N60
O-220
O-251
O-252
TSM2N60
18BSC
TSM2N60CH
TSM2N60CP
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Untitled
Abstract: No abstract text available
Text: TSM80N08 75V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features VDS V RDS(on)(mΩ) ID (A) 75 8 @ VGS =10V 80 Block Diagram ● Advanced Trench Technology ● Low RDS(ON) 8mΩ (Max.) ● Low gate charge typical @ 91.5nC (Typ.)
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TSM80N08
O-220
203pF
50pcs
TSM80N08CZ
25rty
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Untitled
Abstract: No abstract text available
Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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O-220
O-251
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TSM2N60
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2a 400v mosfet to-251
Abstract: N-Channel mosfet 600v 1a BRIDGE 2A 600V MOSFET TO-220 MOSFET "CURRENT source" impedance mosfet 600V 2A TO-252 N-channel MOSFET
Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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TSM2N60
O-220
O-251
O-252
TSM2N60
2a 400v mosfet to-251
N-Channel mosfet 600v 1a
BRIDGE 2A 600V
MOSFET TO-220
MOSFET "CURRENT source" impedance
mosfet 600V 2A
TO-252 N-channel MOSFET
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2a 400v mosfet to-251
Abstract: 600V 2A MOSFET N-channel MOSFET 400V TO-220 2a 400v mosfet marking code C5 N-Channel mosfet 600v 1a SOT c5 87 p channel mosfet 100v pin diagram of MOSFET 435 M dpak
Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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TSM2N60
O-220
O-251
O-252
TSM2N60
2a 400v mosfet to-251
600V 2A MOSFET N-channel
MOSFET 400V TO-220
2a 400v mosfet
marking code C5
N-Channel mosfet 600v 1a
SOT c5 87
p channel mosfet 100v
pin diagram of MOSFET
435 M dpak
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Untitled
Abstract: No abstract text available
Text: TSM160N10 100V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS V RDS(on)(mΩ)(max) ID (A) 100 5.5 @ VGS =10V 160 Block Diagram Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.)
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TSM160N10
O-220
154nC
300pF
TSM160N10CZ
50pcs
Alex121123
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Flyback Transformers SANYO TV
Abstract: RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams
Text: Discrete Devices 2010-8 Mobile Equipment • Application Block ■ Charger [GSM, UMTS] Charger DC-DC Converter / Load SW P3 Down Converter Low end P6 5 to 6V 0.5 to 1A CPU AC Adapter AC Adapter [CDMA2000] Q2 Q3 +B D2 Q1 System AC Adapter RF Block Down Converter (High end)
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CDMA2000]
Flyback Transformers SANYO TV
RD1004
2SC5707
uhf 150w mosfet 12v
bfl4006
2SC5706 equivalent
Si sw diode 20V 0.2A SOT323
SSFP package
BBS3002
tv tube charger circuit diagrams
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