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    TSM2N60CP Search Results

    TSM2N60CP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TSM2N60CP Taiwan Semiconductor N CHANNEL POWER ENHANCEMENT MODE MOSFET Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without


    Original     		TSM2N60 O-220 O-251 O-252 TSM2N60 PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    TSM2N60CP

    Abstract: MOSFET 600V 1A 2a 400v mosfet to-251 TSM2N60 TSM2N60CH
    Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without


    Original     		TSM2N60 O-220 O-251 O-252 TSM2N60 TSM2N60CP MOSFET 600V 1A 2a 400v mosfet to-251 TSM2N60CH PDF

    25V 1A power MOSFET TO-220

    Abstract: mosfet 600V 2A TO-252 N-channel MOSFET MOSFET TO-220
    Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without


    Original     		TSM2N60 O-220 O-251 O-252 TSM2N60 25V 1A power MOSFET TO-220 mosfet 600V 2A TO-252 N-channel MOSFET MOSFET TO-220 PDF

    18BSC

    Abstract: TSM2N60 TSM2N60CH TSM2N60CP
    Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without


    Original     		TSM2N60 O-220 O-251 O-252 TSM2N60 18BSC TSM2N60CH TSM2N60CP PDF

    2a 400v mosfet to-251

    Abstract: N-Channel mosfet 600v 1a BRIDGE 2A 600V MOSFET TO-220 MOSFET "CURRENT source" impedance mosfet 600V 2A TO-252 N-channel MOSFET
    Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without


    Original     		TSM2N60 O-220 O-251 O-252 TSM2N60 2a 400v mosfet to-251 N-Channel mosfet 600v 1a BRIDGE 2A 600V MOSFET TO-220 MOSFET "CURRENT source" impedance mosfet 600V 2A TO-252 N-channel MOSFET PDF

    2a 400v mosfet to-251

    Abstract: 600V 2A MOSFET N-channel MOSFET 400V TO-220 2a 400v mosfet marking code C5 N-Channel mosfet 600v 1a SOT c5 87 p channel mosfet 100v pin diagram of MOSFET 435 M dpak
    Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without


    Original     		TSM2N60 O-220 O-251 O-252 TSM2N60 2a 400v mosfet to-251 600V 2A MOSFET N-channel MOSFET 400V TO-220 2a 400v mosfet marking code C5 N-Channel mosfet 600v 1a SOT c5 87 p channel mosfet 100v pin diagram of MOSFET 435 M dpak PDF

    diode BY 252

    Abstract: TSM2N60 TSM2N60CH TSM2N60CP
    Text: TSM2N60 N-Channel Power Enhancement Mode MOSFET VDS = 600V ID = 2A RDS on , Vgs @ 10V, Ids @ 1.0A =4.4Ω Pin assignment: 1. Gate 2. Drain 3. Source General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without


    Original     		TSM2N60 TSM2N60 O-252 diode BY 252 TSM2N60CH TSM2N60CP PDF

    SOT-252 20v

    Abstract: N-Channel mosfet 600v 1a U26S 25CC TSM2N60 TSM2N60CH TSM2N60CP marking code 749 diode BBC u035
    Text: $ TAIW AN TSM2N60 SEMICONDUCTOR 600V N-Channei Power MOSFET pb RoHS C O M P L IA N C E TO-251 TO-252 (DPAK) (IPAK) Jü F à P in D e f in it io n : 1. G ate 2. Drain 3. Source PRODUCT SUM M ARY V DS (V) R D S (o n )(Û ) I d (A) 6Û0 5 @ Vcs=10V 1 T 7V T


    OCR Scan     		TSM2N60 O-220 O-251 O-252 TSM2N60 SOT-252 20v N-Channel mosfet 600v 1a U26S 25CC TSM2N60CH TSM2N60CP marking code 749 diode BBC u035 PDF

    TSM2N60CP

    Abstract: TSM2N60 TSM2N60CH 2a 400v mosfet to-251
    Text: TSC TSIVI2N60 N-Channel Power Enhancement Mode MOSFET TO-251 TO-252 VDS= 600V lD = 2A Pin assignment: 1. Gate 2. Source 1 r d s fo n i’ 3. Drain 3 Vgs @ 10V, Ids @ 1.0A =4.4Q General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without


    OCR Scan     		TSM2N60 O-251 O-252 TSM2N60 O-252 TSM2N60CP TSM2N60CH 2a 400v mosfet to-251 PDF