IEC60747-8
Abstract: AN11158 nxp mosfet soa derating AN10273 iec60134
Text: AN11158 Understanding power MOSFET data sheet parameters Rev. 2 — 16 August 2012 Application note Document information Info Content Keywords MOSFET. Abstract This application note describes the content of power MOSFET data sheet parameters AN11158 NXP Semiconductors
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AN11158
AN11158
IEC60747-8
nxp mosfet soa derating
AN10273
iec60134
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Untitled
Abstract: No abstract text available
Text: AN11158 Understanding power MOSFET data sheet parameters Rev. 4 — 4 February 2014 Application note Document information Info Content Keywords MOSFET. Abstract This application note describes the content of power MOSFET data sheet parameters AN11158 NXP Semiconductors
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AN11158
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Untitled
Abstract: No abstract text available
Text: AN11158 Understanding power MOSFET data sheet parameters Rev. 3 — 7 January 2013 Application note Document information Info Content Keywords MOSFET. Abstract This application note describes the content of power MOSFET data sheet parameters AN11158 NXP Semiconductors
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AN11158
AN11158
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MAX1614
Abstract: protection against interest current APP3472 2.2K resistor 17-uA an3472
Text: Maxim > App Notes > CIRCUIT PROTECTION Keywords: series protection, power switch, power MOSFET, transient protection Mar 23, 2005 APPLICATION NOTE 3472 Series Protection for Power-Line Transients Abstract: This application note describes a circuit that protects an n-channel power MOSFET against low and
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com/an3472
MAX1614:
AN3472,
APP3472,
Appnote3472,
MAX1614
protection against interest current
APP3472
2.2K resistor
17-uA
an3472
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FQA9N90C equivalent
Abstract: Rudy Severns "Safe Operating Area and Thermal Design" mospower applications handbook 2kw mosfet FQA11N90C Severns power mosfet 7515 siliconix mosfet discontinued AN-7514
Text: March, 2004 Application Note 9034 Power MOSFET Avalanche Guideline Sungmo Young, Application Engineer Introduction The Power MOSFET is a very popular switching device used in switching power supplies and DC-DC converters. Their operation frequency is being continuously increased to reduce size
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Abstract: No abstract text available
Text: Power MOSFET Application Precautions Power MOSFET in Detail 5. Application Precautions 5.1 Precautions Concerning Drive Conditions for Shortening Switching Time Bipolar transistors require a large base current to maintain the saturation area; however, power
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CV2f
Abstract: AN1108
Text: Applying Power MOSFET Drivers Application Note September 16, 2003 AN1108 Author: Bruce Rosenthal The EL7xxx series of high speed power MOSFET drivers achieve noteworthy improvements in speed, efficiency, input impedance, and functionality thru the application of advanced CMOS technology and novel circuit
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AN1108
200ns.
CV2f
AN1108
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FULLY PROTECTED MOSFET
Abstract: mosfet driver in battery applications MAX1614 diode reverse voltage protection 6v battery APP2012 10mor power-switch protection mosfet
Text: Maxim > App Notes > BATTERY MANAGEMENT POWER-SUPPLY CIRCUITS Keywords: MOSFET driver, reverse battery protection, mosfet, reverse battery protected, power switch drivers, diode protection May 11, 2003 APPLICATION NOTE 2012 MOSFET Driver Is Reverse-Battery Protected
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com/an2012
MAX1614:
AN2012,
APP2012,
Appnote2012,
FULLY PROTECTED MOSFET
mosfet driver in battery applications
MAX1614
diode reverse voltage protection
6v battery
APP2012
10mor
power-switch
protection mosfet
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tektronix 576 curve tracer
Abstract: No abstract text available
Text: VISHAY SILICONIX Power MOSFETs Application Note AN-957 Measuring Power MOSFET Characteristics TABLE OF CONTENTS Page 1. General Information . 2
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AN-957
18-Nov-10
tektronix 576 curve tracer
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88-108 rf amplifier
Abstract: 88-108 mhz Power amplifier w RTL 602 an power 88-108 mhz AN1229 neosid RTL 602 W AN-1229 neosid* 10k SD2932
Text: AN1229 Application note SD2932 RF MOSFET for 300 W FM amplifier Introduction This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz using the new STMicroelectronics RF MOSFET transistor SD2932.
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AN1229
SD2932
SD2932.
SD2932
88-108 rf amplifier
88-108 mhz Power amplifier w
RTL 602
an power 88-108 mhz
AN1229
neosid
RTL 602 W
AN-1229
neosid* 10k
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Untitled
Abstract: No abstract text available
Text: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 49mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
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Text: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 98mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
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Text: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 110mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
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800V 40A mosfet
Abstract: mosfet 1200V 40A MOSFET 40A 600V APTMC60TLM55CT3AG
Text: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 55mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
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APTMC60TLM55CT3AG
800V 40A mosfet
mosfet 1200V 40A
MOSFET 40A 600V
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Untitled
Abstract: No abstract text available
Text: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 17mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
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jfet cascode
Abstract: mosfet equivalent AN-7502 mos cascode AN72 RFM15N15 high transconductance JFET Fairchild presentation
Text: Power MOSFET Switching Waveforms: A New Insight Application Note [ /Title AN72 60 /Subject (Power MOSFET Switch ing Waveforms: A New Insight ) /Autho r () /Keywords (Intersil Corporation, semiconductor) /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines
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Inverter IRF1404
Abstract: IRF1404 FET IRF1404 static characteristics of mosfet amp mosfet schematic circuit MOSFET dynamic parameters 3 phase mosfet drive schematic AN1040 bach AN-1040
Text: Application Note AN-1040 System Simulation Using Power MOSFET QuasiDynamic Model Table of Contents Page Objective: To examine the Quasi-Dynamic model of power MOSFET and its effects on device thermal response . 1
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Assure2000
Inverter IRF1404
IRF1404 FET
IRF1404
static characteristics of mosfet
amp mosfet schematic circuit
MOSFET dynamic parameters
3 phase mosfet drive schematic
AN1040
bach
AN-1040
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SiC POWER MOSFET
Abstract: sic MOSFET APTMC60TLM14CAG
Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 14mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode
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SiC POWER MOSFET
sic MOSFET
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mosfet 5kw high power rf
Abstract: 13.56Mhz class e power amplifier 13.56MHZ 3KW GENERATOR 2kw mosfet SCHEMATIC 5kw power supply 30A 12v to 220v step up transformer circuit diagram of 13.56MHz RF Generator 13.56Mhz rf amplifier module DRF1300 Class E power amplifier, 13.56MHz
Text: Application Note 13.56 MHz, Class D Push-Pull, 2KW RF Generator with Microsemi DRF1300 Power MOSFET Hybrid Dec. 30 2008 By Gui Choi Sr. RF Application Engineer The DRF1300/CLASS-D Reference design is available to expedite the evaluation of the DRF1300 push-pull MOSFET hybrid. This application note or
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DRF1300
DRF1300/CLASS-D
56MHz
mosfet 5kw high power rf
13.56Mhz class e power amplifier
13.56MHZ 3KW GENERATOR
2kw mosfet
SCHEMATIC 5kw power supply 30A
12v to 220v step up transformer
circuit diagram of 13.56MHz RF Generator
13.56Mhz rf amplifier module
Class E power amplifier, 13.56MHz
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Untitled
Abstract: No abstract text available
Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode
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Untitled
Abstract: No abstract text available
Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode
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neosid* 10k
Abstract: neosid* 5.6k 300w fm amplifier VK200 INDUCTOR inductor vk200 88-108 rf amplifier 300w amplifier balun transformer report balun 50 ohm 100 ohm AN rf 88-108mhz
Text: AN1229 APPLICATION NOTE SD2932 RF MOSFET FOR 300W FM AMPLIFIER Serge Juhel 1. ABSTRACT This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz and using the new STMicroelectronics RF MOSFET transistor SD2932.
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AN1229
SD2932
SD2932.
SD2932
neosid* 10k
neosid* 5.6k
300w fm amplifier
VK200 INDUCTOR
inductor vk200
88-108 rf amplifier
300w amplifier
balun transformer report
balun 50 ohm 100 ohm
AN rf 88-108mhz
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inductor vk200
Abstract: RTL 602 W 300w fm amplifier neosid* 10k VK200 INDUCTOR VK200 inductor of high frequencies neosid "RF MOSFET" 300W 300 ohms balun 300w amplifier
Text: AN1229 APPLICATION NOTE SD2932 RF MOSFET FOR 300W FM AMPLIFIER Serge Juhel 1. ABSTRACT This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz and using the new STMicroelectronics RF MOSFET transistor SD2932.
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AN1229
SD2932
SD2932.
SD2932
inductor vk200
RTL 602 W
300w fm amplifier
neosid* 10k
VK200 INDUCTOR
VK200 inductor of high frequencies
neosid
"RF MOSFET" 300W
300 ohms balun
300w amplifier
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power switching with IRFP450 schematic
Abstract: POWER MOSFET CIRCUIT BJT, General electric Linear Application Note FET IRFP450 Avalanche
Text: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN-1005 Power MOSFET Avalanche Design Guidelines TABLE OF CONTENTS Page Table of Figures. 2
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AN-1005
06-Dec-11
power switching with IRFP450 schematic
POWER MOSFET CIRCUIT
BJT, General electric
Linear Application Note
FET IRFP450
Avalanche
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