STS3C2F100
Abstract: No abstract text available
Text: STS3C2F100 N-CHANNEL 100V - 0.110 Ω - 3A SO-8 P-CHANNEL 100V - 0.320 Ω - 1.5A SO-8 COMPLEMENTARY PAIR STripFET POWER MOSFET TYPE VDSS RDS on ID STS3C2F100(N-Channel) STS3C2F100(P-Channel) 100 V 100 V < 0.145Ω < 0.380Ω 3.0 A 1.5 A • ■ ■ ■
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STS3C2F100
STS3C2F100
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JESD97
Abstract: STS3C2F100
Text: STS3C2F100 N-channel 100V - 0.110 Ω - 3A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS3C2F100(N-channel) 100V <0.145 3.0A STS3C2F100(P-channel) 100V <0.380 1.5A • Standard outline for easy automated surface
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STS3C2F100
STS3C2F100
JESD97
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JESD97
Abstract: STS3C2F100
Text: STS3C2F100 N-channel 100V - 0.110 Ω - 3A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS3C2F100(N-channel) 100V <0.145 3.0A STS3C2F100(P-channel) 100V <0.380 1.5A • Standard outline for easy automated surface
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STS3C2F100
STS3C2F100
JESD97
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JESD97
Abstract: STS4C3F60L s4c3f60l mosfet pch 3a 60v
Text: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly
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STS4C3F60L
STS4C3F60L
JESD97
s4c3f60l
mosfet pch 3a 60v
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mosfet pch 3a 60v
Abstract: JESD97 STS4C3F60L
Text: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly
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STS4C3F60L
STS4C3F60L
mosfet pch 3a 60v
JESD97
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Untitled
Abstract: No abstract text available
Text: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly
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STS4C3F60L
STS4C3F60L
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AP4500M
Abstract: AP4502M AP4502 20V P-Channel Power MOSFET AP4535M AP4501M Power MOSFET SO-8 Complementary N-P channel "Power MOSFET" AP2030M
Text: Power MOSFET SO-8 RDS ON Max(mΩ) Part No. BV DSS(V) I D(A) P D(W) V GS@10V V GS@4.5V Application V GS@2.5V Complementary N-P channel 30V 50 70 5 2 AP4535M LCD -30V 70 90 -4 2 30V 28 42 7 2 AP4501M LCD,M/B -30V 20V 50 90 30 45 -5.3 2 6 2 AP2030M LCD,M/B
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AP4535M
AP4501M
AP2030M
AP4500M
AP4502M
AP4500M
AP4502M
AP4502
20V P-Channel Power MOSFET
AP4535M
AP4501M
Power MOSFET SO-8 Complementary N-P channel
"Power MOSFET"
AP2030M
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MOSFET IGNITION
Abstract: NTMS4700NR2
Text: ON Semiconductor Selector Guide − Power MOSFET Products Power MOSFET Products In Brief . . . ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑÑ ÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ
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O-264
MOSFET IGNITION
NTMS4700NR2
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FDY4001CZ
Abstract: SC89
Text: FDY4001CZ Complementary N & P-Channel PowerTrench MOSFET tm Features General Description Q1: Max rDS on = 7Ω at VGS = 2.5V, ID = 175mA This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS=2.5V and
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FDY4001CZ
175mA
150mA
200mA
-150mA
-125mA
-100mA
FDY4001CZ
SC89
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MOSFET P-channel SOT-23
Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
Text: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
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2N7000
2N7002L
MOSFET60
OT-23
BS107,
BS107A
BS108
BS170
NUD3124
NUD3160
MOSFET P-channel SOT-23
NTD80N02
NTD18N06
NTMS3P03R2
MLD1N06CL
NTHD5904N
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MMDF2C02E
Abstract: MMDF2C02ER1 MMDF2C02ER2 B2C02
Text: MOTOROU SEMICONDUCTOR TECHNICAL DATA Product Pfeview MMDF2C02E Complementary TMOS Fieid Effect Winsiskors Motorola Prefe- Osvlse I I Medium Power Surface Mount Products ~ This new complementary TMOS MOSFET consists of an advanced series of N and P-Channel MOSFH die. The die are
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MMDF2C02E
MMDF2C02E
MMDF2C02ER1
MMDF2C02ER2
B2C02
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A Listing and Cross Reference of Available Technical Literature from ON Semiconductor
Abstract: MMDF3N06VL MMSF4205 MMSF4P01HDR1 MTP75N06HD MTB3N100E mtd1p50e transistor book transistor SOT23 TO4 36 IGBT Manual
Text: SG385/D Rev. 3, Jul-2000 Low Voltage Surface Mount TMOS Power MOSFET Selector Guide ON Semiconductor Featuring MiniMOS™ SO-8 , EZFET™, Micro8™, SOT-223, TSOP-6, SOT-23, SC-70/SOT-323, DPAK and D2PAK Low Voltage Surface Mount MOSFETs t TMOS Power MOSFETs
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SG385/D
Jul-2000
OT-223,
OT-23,
SC-70/SOT-323,
MTP75N06HD
r14525
A Listing and Cross Reference of Available Technical Literature from ON Semiconductor
MMDF3N06VL
MMSF4205
MMSF4P01HDR1
MTP75N06HD
MTB3N100E
mtd1p50e
transistor book
transistor SOT23 TO4 36
IGBT Manual
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SI1473DH
Abstract: marking R5* sc-70 N2 SC70 tsop6 marking DC 74371 N2 SC70 6pin MSOP-8 marking AX PIN diode Pspice model V30114 EQUIVALENT OF TO252 PACK OF P-CHANNEL MOSFET WITH
Text: New Product Si1473DH Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)c 0.100 at VGS = - 10 V - 1.6 0.145 at VGS = - 4.5 V - 1.6 VDS (V) - 30 Qg (Typ) 4.1 nC • TrenchFET Power MOSFET APPLICATIONS RoHS • Load Switch for Portable Devices
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Si1473DH
OT-363
SC-70
Si1473DH-T1-E3
03-May-07
marking R5* sc-70
N2 SC70
tsop6 marking DC
74371
N2 SC70 6pin
MSOP-8 marking AX
PIN diode Pspice model
V30114
EQUIVALENT OF TO252 PACK OF P-CHANNEL MOSFET WITH
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mosfet based ac drive ckt diagram
Abstract: 200w power AB amplifier circuit diagram DIODE V10-20 2.1 channel amplifier ckt TDA2075A TDA2075 high power fet audio amplifier schematic TDA1400 TRIPATH 200w power amplifier PCB layout
Text: Tri pat h Tec hnol og y, I nc. - Te c hni cal I nf orm at ion TDA2075A STEREO CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING T M TECHNOLOGY Preliminary Information Revision 0.9 – October 2005 GENERAL DESCRIPTION The TDA2075A is a two-channel, amplifier driver, that uses Tripath’s proprietary Digital Power Processing
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TDA2075A
TDA2075A
TDA207in
9/KLi/10
mosfet based ac drive ckt diagram
200w power AB amplifier circuit diagram
DIODE V10-20
2.1 channel amplifier ckt
TDA2075
high power fet audio amplifier schematic
TDA1400
TRIPATH
200w power amplifier PCB layout
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Untitled
Abstract: No abstract text available
Text: bQE D • 01331Ô7 GGGDSMS - T12 ■ - SEMELAB PLC SIILB ^ r -3 ° i-^ 3 prpr M AGNA r^ tec BUZ 905P BUZ 90BP NEW PRODUCT SILICON P-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY,
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BUZ900P
BUZ901P
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Untitled
Abstract: No abstract text available
Text: ¡eluom Semiconductor, Inc. TC426 TC427 TC428 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ The TC426/TC427/TC428 are dual CMOS high-speed drivers. A TTL/CMOS input voltage level is translated into a raii-to-rail output voltage level swing. The CMOS output
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TC426
TC427
TC428
TC426/TC427/TC428
1000pF
30nsec.
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TC426CPA
Abstract: tc428 equivalent tl494 mosfet dc ac inverter mosfet TC427CPA TC427E TC428COA TC426 equivalent
Text: WTELEDYNE COMPONENTS TC426 TC427 TC428 DUAL HIGH-SPEED POWER MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • High-Speed Switching C l = 1000 p F . 30 ns ■ High Peak Output Current. 1.5A ■ High Output Voltage Swing.Vdd- 25 mV
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TC426
TC427
TC428
TC426CPA
tc428 equivalent
tl494 mosfet
dc ac inverter mosfet
TC427CPA
TC427E
TC428COA
TC426 equivalent
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Untitled
Abstract: No abstract text available
Text: WTELEDYNE COMPONENTS TC426 TC427 TC428 DUAL HIGH-SPEED POWER MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • High-Speed Switching Cl = 1000 pF 30 ns ■ High Peak Output Current. 1.5A ■ High Output Voltage Swing. V d d - 2 5 mV
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TC426
TC427
TC428
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RASCO
Abstract: No abstract text available
Text: I I I / I \ A dvanced 1 L inear ALD1103 D e v ic e s , In c . DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These
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ALD1103
ALD1103
ALD1101
ALD1102
ALD1103offers
ALD1103)
RASCO
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Untitled
Abstract: No abstract text available
Text: >1/1 >J X I > 1/1 ADVANCE INFORMATION All inform ation in this data sheet is prelim inary and subject to change. 7/92 P in -P ro g ra m m e d , L o w -V o lta g e , C u rre n t-M o d e S M P S C o n tro lle r The MAX741 can be pin-program m ed into hundreds of
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MAX741
MAX741NEAP
MAX741NMJP
MILSTD-883.
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Analog Devices JX A 8 pin
Abstract: ALD1103 N and P MOSFET
Text: I / I 1 A dvanced L inear D e v ic e s , In c . ALD1103 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR APPLICATIONS GENERAL DESCRIPTION The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These
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ALD1103
ALD1103
ALD1101
ALD1102
AUD1103)
Analog Devices JX A 8 pin
N and P MOSFET
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tc428 equivalent
Abstract: No abstract text available
Text: relwom TC426 Semiconductor, Inc. TC428 DUAL HIGH-SPEED POWER MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ The TC426/TC427/TC428 are dual CMOS high-speed drivers. A TTL/CMOS input voltage level is translated into an output voltage level swing equaling the supply. The
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TC428
TC426
TC427
tc428 equivalent
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N Channel d- MOSFET
Abstract: N Channel E- MOSFET ST MOSFET guide EL7182 p channel mosfet 100v GUIDE mosfet EL7212
Text: h i m CMOS Power MOSFET Drivers " CMOS Pow er MOSFET Drivers ELANTEC P art N um ber D escription P e a k Max "O N” T d i ^TD2 T r /T F i s P ackage C u rren t R esistance ns (ns) m A Con figuration N on-Inverting/ Iso-D rains Inverting/Iso-D rains 4.0A
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EL7861
EL79I
EL7971
EL7981
EL7962
EL7972
EL7982
N Channel d- MOSFET
N Channel E- MOSFET
ST MOSFET guide
EL7182
p channel mosfet 100v
GUIDE mosfet
EL7212
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Tr K 970
Abstract: DIODE 4d
Text: Complementary MOSFET ELM34601AA-N • General D escription ■ Features ELM 34601AA-N uses advanced tre n c h technology to provide excellent Rds on and low gate charge. N -channel P-channel Vds=30V Id=7A Rds(on) < 21mQ(Vgs=10V) Rds(on) < 32mQ(Vgs=4.5V) Vds=-30V
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ELM34601AA-N
ELM34601AA-N
Tr K 970
DIODE 4d
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