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    POWER MOSFET SOT-223 LOW VGS Search Results

    POWER MOSFET SOT-223 LOW VGS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    POWER MOSFET SOT-223 LOW VGS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JESD97

    Abstract: N4NF03L STN4NF03L
    Text: STN4NF03L N-channel 30V - 0.039Ω - 6.5A - SOT-223 STripFET II Power MOSFET General features • Type VDSS RDS on ID STN4NF03L 30V <0.05Ω 6.5A 2 Low threshold drive 1 Description 2 3 SOT-223 This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature


    Original     		PDF STN4NF03L OT-223 N4NF03L JESD97 N4NF03L STN4NF03L

    4nf03l

    Abstract: 4NF03 STN4NF03L st MARKING E4 e4 sot223 JESD97 diode MARKING CODE 917 marking e4 sot ST
    Text: STN4NF03L N-channel 30 V - 0.039 Ω - 6.5 A - SOT-223 STripFET II Power MOSFET Features • Type VDSS RDS on ID STN4NF03L 30 V <0.05 Ω 6.5 A 2 Low threshold drive 1 Application ■ 2 3 SOT-223 Switching applications Description This Power MOSFET is the latest development of


    Original     		PDF STN4NF03L OT-223 4NF03L 4nf03l 4NF03 STN4NF03L st MARKING E4 e4 sot223 JESD97 diode MARKING CODE 917 marking e4 sot ST

    4NF20L

    Abstract: STN4nf20 4nf20 STN4NF20L
    Text: STN4NF20L N-channel 200 V, 1.1 Ω, 1 A SOT-223 low gate charge STripFET II Power MOSFET Features Order code VDSS RDS on max. ID STN4NF20L 200 V < 1.5 Ω 1A • 100% avalanche tested ■ Low gate charge ■ Exceptional dv/dt capability 2 1 2 3 SOT-223 Application


    Original     		PDF STN4NF20L OT-223 4NF20L STN4nf20 4nf20 STN4NF20L

    LE2V

    Abstract: STN7NF10
    Text: STN7NF10 N-CHANNEL 100V - 0.055 Ω - 5A SOT-223 LOW GATE CHARGE STripFET II POWER MOSFET TYPE STN7NF10 • ■ VDSS RDS on ID 100 V < 0.065 Ω 5A TYPICAL RDS(on) = 0.055 Ω APPLICATION ORIENTED CHARACTERIZATION 2 1 2 3 SOT-223 DESCRIPTION This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and


    Original     		PDF STN7NF10 OT-223 LE2V STN7NF10

    P008B DIODE

    Abstract: STN7NF10
    Text: STN7NF10 N-CHANNEL 100V - 0.055 Ω - 5A SOT-223 LOW GATE CHARGE STripFET II POWER MOSFET TYPE STN7NF10 • ■ VDSS RDS on ID 100 V < 0.065 Ω 5A TYPICAL RDS(on) = 0.055 Ω APPLICATION ORIENTED CHARACTERIZATION 2 1 2 3 SOT-223 DESCRIPTION This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and


    Original     		PDF STN7NF10 OT-223 P008B DIODE STN7NF10

    A Listing and Cross Reference of Available Technical Literature from ON Semiconductor

    Abstract: MMDF3N06VL MMSF4205 MMSF4P01HDR1 MTP75N06HD MTB3N100E mtd1p50e transistor book transistor SOT23 TO4 36 IGBT Manual
    Text: SG385/D Rev. 3, Jul-2000 Low Voltage Surface Mount TMOS Power MOSFET Selector Guide ON Semiconductor Featuring MiniMOS™ SO-8 , EZFET™, Micro8™, SOT-223, TSOP-6, SOT-23, SC-70/SOT-323, DPAK and D2PAK Low Voltage Surface Mount MOSFETs t TMOS Power MOSFETs


    Original     		PDF SG385/D Jul-2000 OT-223, OT-23, SC-70/SOT-323, MTP75N06HD r14525 A Listing and Cross Reference of Available Technical Literature from ON Semiconductor MMDF3N06VL MMSF4205 MMSF4P01HDR1 MTP75N06HD MTB3N100E mtd1p50e transistor book transistor SOT23 TO4 36 IGBT Manual

    Untitled

    Abstract: No abstract text available
    Text: STN1NF20 N-channel 200 V, 1.1 Ω, 1 A SOT-223 STripFET II Power MOSFET Features Order code VDSS RDS on max ID STN1NF20 200 V < 1.5 Ω 1A • 100% avalanche tested ■ Low gate charge ■ Exceptional dv/dt capability 4 1 2 3 SOT-223 Applications ■ Switching applications


    Original     		PDF STN1NF20 OT-223 OT-223

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET 1 1 SOT-223 „ DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche


    Original     		PDF OT-223 QW-R502-579

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF3N25Z Power MOSFET 3A, 250V N-CHANNEL POWER MOSFET 1  DESCRIPTION SOT-223 The UTC UF3N25Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge


    Original     		PDF UF3N25Z OT-223 UF3N25Z O-252 O-251 UF3N25ZL-AA3-R UF3N25ZG-AA3-R UF3N25ZL-TM3-T UF3N25ZG-TM3-T

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET 1 1 TO-92 SOT-223  DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged


    Original     		PDF OT-223 O-220 O-220F O-251 O-251L QW-R502-579

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F2 SOT-223 „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF O-220F2 OT-223 O-220 O-220F QW-R502-052

    Untitled

    Abstract: No abstract text available
    Text: NIF9N05CL Protected Power MOSFET 2.6 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT-223 Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • • •


    Original     		PDF NIF9N05CL OT-223 NIF9N05CL/D

    Untitled

    Abstract: No abstract text available
    Text: AP9435GK-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D Low Gate Charge Fast Switching Characteristic -30V RDS ON 50m ID S RoHS Compliant & Halogen-Free BVDSS -6A D SOT-223 G Description


    Original     		PDF AP9435GK-HF OT-223 100ms

    AP9435K

    Abstract: No abstract text available
    Text: AP9435K Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Low On-resistance ▼ Fast Switching G -30V RDS ON 50mΩ ID S SOT-223 BVDSS -6A D Description D The Advanced Power MOSFETs from APEC provide the


    Original     		PDF AP9435K OT-223 100ms 120/W AP9435K

    AP9435GK

    Abstract: No abstract text available
    Text: AP9435GK RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Low Gate Charge ▼ Fast Switching G -30V RDS ON 50mΩ ID S SOT-223 BVDSS -6A D Description D The Advanced Power MOSFETs from APEC provide the


    Original     		PDF AP9435GK OT-223 100ms 120/W AP9435GK

    JESD97

    Abstract: N2NE10L STN2NE10L
    Text: STN2NE10L N-channel 100V - 0.33Ω -2A - SOT-223 STripFET Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN2NE10L 100V <0.4Ω 1.8A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive


    Original     		PDF STN2NE10L OT-223 JESD97 N2NE10L STN2NE10L

    Untitled

    Abstract: No abstract text available
    Text: STN2NE10L N-channel 100V - 0.33Ω -2A - SOT-223 STripFET Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN2NE10L 100V <0.4Ω 1.8A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive


    Original     		PDF STN2NE10L OT-223 OT-223 STN2NE10L

    Power MOSFET SOT-223

    Abstract: st MARKING E4 JESD97 N2NE10L STN2NE10L
    Text: STN2NE10L N-channel 100V - 0.33Ω -2A - SOT-223 STripFET Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN2NE10L 100V <0.4Ω 1.8A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive


    Original     		PDF STN2NE10L OT-223 Power MOSFET SOT-223 st MARKING E4 JESD97 N2NE10L STN2NE10L

    N3NF06L

    Abstract: STN3NF06L
    Text: STN3NF06L N-channel 60V - 0.07Ω -4A - SOT-223 STripFET II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN3NF06L 60V <0.1Ω 4A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive


    Original     		PDF STN3NF06L OT-223 OT-223 STN3NF06L N3NF06L

    N5PF02V

    Abstract: JESD97 STN5PF02V
    Text: STN5PF02V P-channel 20V - 0.065Ω - 4.2A - SOT-223 2.5V - Drive STripFET II Power MOSFET General features Type VDSS RDS on ID STN5PF02V 20V <0.080Ω 4.2A • Ultra low threshold gate drive (2.5V) ■ Standard outline for easy automated surface mount assembly


    Original     		PDF STN5PF02V OT-223 N5PF02V JESD97 STN5PF02V

    N5PF02V

    Abstract: JESD97 STN5PF02V Power MOSFET SOT-223
    Text: STN5PF02V P-channel 20V - 0.065Ω - 4.2A - SOT-223 2.5V - Drive STripFET II Power MOSFET General features Type VDSS RDS on ID STN5PF02V 20V <0.080Ω 4.2A • Ultra low threshold gate drive (2.5V) ■ Standard outline for easy automated surface mount assembly


    Original     		PDF STN5PF02V OT-223 N5PF02V N5PF02V JESD97 STN5PF02V Power MOSFET SOT-223

    AP9435GK

    Abstract: AP9435 m9080
    Text: AP9435GK Pb Free Plating Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Low On-resistance ▼ Fast Switching G -30V RDS ON 50mΩ ID S SOT-223 BVDSS -6A D Description D The Advanced Power MOSFETs from APEC provide the


    Original     		PDF AP9435GK OT-223 100ms 120/W AP9435GK AP9435 m9080

    ST C 236 DIODE

    Abstract: N3NF06L
    Text: STN3NF06L N-channel 60V - 0.07Ω -4A - SOT-223 STripFET II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN3NF06L 60V <0.1Ω 4A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive


    Original     		PDF STN3NF06L OT-223 OT-223 STN3NF06L ST C 236 DIODE N3NF06L

    ssm9435

    Abstract: No abstract text available
    Text: SSM9435K P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement D Low on-resistance S Fast switching SOT-223 G BV DSS -30V R DS ON 50mΩ -6A ID D Description D Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching,


    Original     		PDF SSM9435K OT-223 ssm9435