POWER TRANSISTOR BD Search Results

POWER TRANSISTOR BD Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

POWER TRANSISTOR BD Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BD234 Abstract: PNP POWER TRANSISTOR SOT-32 Text: BD234 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BD234 is a silicon Epitaxial-Base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications.	Original	BD234 BD234 OT-32 OT-32 PNP POWER TRANSISTOR SOT-32	PDF
BD234 Abstract: No abstract text available Text: BD234 SILICON PNP TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BD234 is a silicon epitaxial-base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. 3	Original	BD234 BD234 OT-32 OT-32	PDF
BD234 Abstract: SGS-Thomson Text: BD234 SILICON PNP TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BD234 is a silicon epitaxial-base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. 3	Original	BD234 BD234 OT-32 OT-32 SGS-Thomson	PDF
MOTOROLA TRANSISTOR Abstract: BD159 Motorola bipolar transistor motorola sps transistor Text: MOTOROLA Order this document by BD159/D SEMICONDUCTOR TECHNICAL DATA BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTOR	Original	BD159/D MOTOROLA TRANSISTOR BD159 Motorola bipolar transistor motorola sps transistor	PDF
tip122 tip127 audio board Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920 Text: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents	Original	Power247TM, tip122 tip127 audio board BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920	PDF
100MAdc Abstract: motorola bipolar transistor GUIDE 40250 Transistor Catalog Bipolar Transistor 40250 power transistor motorola 239 zener Text: MOTOROLA Order this document by BD791/D SEMICONDUCTOR TECHNICAL DATA BD791 NPN Plastic Silicon Power Transistor Motorola Preferred Device . . . designed for low power audio amplifier and low–current, high speed switching applications. 4 AMPERE POWER TRANSISTOR	Original	BD791/D BD791 BD791T O-225 \\Roarer\root\data13\imaging\BITTING\cpl mismatch\20000817\08162000 3\ONSM\08032000 100MAdc motorola bipolar transistor GUIDE 40250 Transistor Catalog Bipolar Transistor 40250 power transistor motorola 239 zener	PDF
BD791 Abstract: MBR340 MSD6100 Text: MOTOROLA Order this document by BD791/D SEMICONDUCTOR TECHNICAL DATA BD791 NPN Plastic Silicon Power Transistor Motorola Preferred Device . . . designed for low power audio amplifier and low–current, high speed switching applications. 4 AMPERE POWER TRANSISTOR	Original	BD791/D BD791 BD791 MBR340 MSD6100	PDF
BD238 Abstract: bd237 equivalent bd238 equivalent 0016114E BD237 Transistor B C 458 Text: BD238 Low voltage PNP power transistor Features • Low saturation voltage ■ PNP transistor Applications ■ Audio, power linear and switching applications 3 1 SOT-32 TO-126 Description The device is manufactured in planar technology with “Base Island” layout. The resulting transistor	Original	BD238 OT-32 O-126) BD237. BD238 bd237 equivalent bd238 equivalent 0016114E BD237 Transistor B C 458	PDF
Untitled Abstract: No abstract text available Text: BD239C NPN power transistor Features • NPN transistor Applications ■ General purpose switching and amplifier transistor Description 1 The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance	Original	BD239C BD240C. O-220	PDF
BD239C Abstract: BD240C JESD97 transistor marking 1a Text: BD239C NPN power transistor Features • NPN transistor Applications ■ General purpose switching and amplifier transistor Description 1 The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance	Original	BD239C BD240C. O-220 BD239C BD240C JESD97 transistor marking 1a	PDF
BD159 Abstract: No abstract text available Text: ON Semiconductort Plastic Medium Power NPN Silicon Transistor BD159 . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 20 WATTS • Suitable for Transformerless, Line–Operated Equipment	Original	BD159/D r14525 BD159	PDF
BD159 Abstract: No abstract text available Text: ON Semiconductor Plastic Medium Power NPN Silicon Transistor BD159 . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 20 WATTS • Suitable for Transformerless, Line–Operated Equipment	Original	BD159/D r14525 BD159	PDF
MAR 733 Abstract: BD131 MAR 745 TRANSISTOR Q 817 BD132 BP317 Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD131 NPN power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 04 Philips Semiconductors Product specification NPN power transistor	Original	M3D100 BD131 O-126; BD132. MAM254 O-126. SCA53 117047/00/02/pp8 MAR 733 BD131 MAR 745 TRANSISTOR Q 817 BD132 BP317	PDF
BD330 Abstract: Q 817 BD329 BP317 Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD330 PNP power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 22 Philips Semiconductors Product specification PNP power transistor	Original	M3D100 BD330 O-126; BD329. SCA54 117047/00/02/pp8 BD330 Q 817 BD329 BP317	PDF

MAR 745 TRANSISTOR Abstract: transistor BD329 BD329 BD330 BP317 Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD329 NPN power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 07 Philips Semiconductors Product specification NPN power transistor	Original	M3D100 BD329 O-126; BD330. MAM254 SCA53 117047/00/02/pp8 MAR 745 TRANSISTOR transistor BD329 BD329 BD330 BP317	PDF
bd132 equivalent Abstract: BD132 MAR 745 TRANSISTOR BD131 transistor TO-126 Outline Dimensions BP317 Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD132 PNP power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 04 Philips Semiconductors Product specification PNP power transistor	Original	M3D100 BD132 O-126; BD131. MAM272 O-126. SCA53 117047/00/02/pp8 bd132 equivalent BD132 MAR 745 TRANSISTOR BD131 transistor TO-126 Outline Dimensions BP317	PDF
BDP31 Abstract: BDP32 BP317 Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 BDP32 PNP medium power transistor Product specification Supersedes data of 1997 Mar 10 1999 Apr 23 Philips Semiconductors Product specification PNP medium power transistor BDP32 FEATURES PINNING	Original	M3D087 BDP32 OT223 BDP31. MAM288 OT223) SCA63 115002/00/03/pp8 BDP31 BDP32 BP317	PDF
BD443 Abstract: MGP540 BD228 BLW77 MGP523 RF POWER TRANSISTOR NPN vhf philips ceramic disc capacitors 1500 pf Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW77 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power	Original	BLW77 BD443 MGP540 BD228 BLW77 MGP523 RF POWER TRANSISTOR NPN vhf philips ceramic disc capacitors 1500 pf	PDF
BD443 Abstract: BLW76 BD228 philips polystyrene capacitor MGP501 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW76 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power	Original	BLW76 BD443 BLW76 BD228 philips polystyrene capacitor MGP501	PDF
Untitled Abstract: No abstract text available Text: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg BD 234 SILICON PNP TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP TRANSISTOR DESCRIPTION The BD234 is a silicon epitaxial-base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and	OCR Scan	BD234 OT-32 BD234 OT-32 O-126)	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification NPN power transistor BDP31 FEATURES • SOT223 package. DESCRIPTION NPN power transistor in a plastic SOT223 package for general purpose, medium power applications. PNP complement is BDP32. PINNING - SOT223 PIN	OCR Scan	OT223 BDP32. BDP31	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by BD159/D SEMICONDUCTOR TECHNICAL DATA BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. • • 0.5 AMPERE POWER TRANSISTOR	OCR Scan	BD159/D BD159 O-225AA	PDF
BDY39 Abstract: TRANSISTOR L 287 A TCA 290 BDY39-4 BDY39-6 Q62901-B11-A Q62901-B50 Text: BDY39 NPN Transistor for high-power AF output stages The BD Y 39 is a single diffused NPN silicon transistor in a case 3 A 2 DIN 41872 sim. TO -3 . The collector is electrically connected to the case. The transistor is especially designed for use in high-power A F output stages and in stabilized power	OCR Scan	BDY39 BDY39 2602-D 62702-D TRANSISTOR L 287 A TCA 290 BDY39-4 BDY39-6 Q62901-B11-A Q62901-B50	PDF

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POWER TRANSISTOR BD Search Results

POWER TRANSISTOR BD Result Highlights (5)

POWER TRANSISTOR BD Datasheets Context Search

BD234

BD234

BD234

MOTOROLA TRANSISTOR

tip122 tip127 audio board

100MAdc

BD791

BD238

Untitled

BD239C

BD159

BD159

MAR 733

BD330

MAR 745 TRANSISTOR

bd132 equivalent

BDP31

BD443

BD443

Untitled

Untitled

la 4440 amplifier circuit diagram 300 watt

Untitled

BDY39