Untitled
Abstract: No abstract text available
Text: Si7858ADP Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) ID (A) 0.0026 at VGS = 4.5 V 29 0.0037 at VGS = 2.5 V 23 Qg (Typ.) 54 PowerPAK SO-8 • New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile
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Si7858ADP
Si7858ADP-T1-E3
Si7858ADP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si7888DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.012 at VGS = 10 V 15.7 0.020 at VGS = 4.5 V 12.1 PowerPAK SO-8 • Halogen-free available • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®
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Si7888DP
Si7888DP-T1-E3
Si7888DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si7858ADP Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) ID (A) 0.0026 at VGS = 4.5 V 29 0.0037 at VGS = 2.5 V 23 Qg (Typ.) 54 PowerPAK SO-8 • New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile
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Si7858ADP
Si7858ADP-T1-E3
Si7858ADP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si7888DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.012 at VGS = 10 V 15.7 0.020 at VGS = 4.5 V 12.1 PowerPAK SO-8 • Halogen-free available • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®
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Si7888DP
Si7888DP-T1-E3
Si7888DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si7463DP www.vishay.com Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -40 RDS(on) () ID (A) 0.0092 at VGS = -10 V -18.6 0.0140 at VGS = -4.5 V -15 PowerPAK SO-8 S 6.15 mm • TrenchFET Power MOSFETs • New low thermal resistance PowerPAK®
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Si7463DP
Si7463DP-T1-E3
Si7463DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si7858ADP Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) ID (A) 0.0026 at VGS = 4.5 V 29 0.0037 at VGS = 2.5 V 23 Qg (Typ.) 54 PowerPAK SO-8 • New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile
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Si7858ADP
Si7858ADP-T1-E3
Si7858ADP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product Si7172DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)g RDS(on) (Ω) 200 0.070 at VGS = 10 V 25 0.076 at VGS = 6 V 24 Qg (Typ.) 34 PowerPAK SO-8 • • • • • Halogen-free TrenchFET Power MOSFET Low Thermal Resistance PowerPAK® Package
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Si7172DP
Si7172DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product Si7172DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)g RDS(on) (Ω) 200 0.070 at VGS = 10 V 25 0.076 at VGS = 6 V 24 Qg (Typ.) 34 PowerPAK SO-8 • • • • • Halogen-free TrenchFET Power MOSFET Low Thermal Resistance PowerPAK® Package
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Si7172DP
Si7172DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product Si7172DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)g RDS(on) (Ω) 200 0.070 at VGS = 10 V 25 0.076 at VGS = 6 V 24 Qg (Typ.) 34 PowerPAK SO-8 • • • • • Halogen-free TrenchFET Power MOSFET Low Thermal Resistance PowerPAK® Package
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Si7172DP
Si7172DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product Si7172DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)g RDS(on) (Ω) 200 0.070 at VGS = 10 V 25 0.076 at VGS = 6 V 24 Qg (Typ.) 34 PowerPAK SO-8 • • • • • Halogen-free TrenchFET Power MOSFET Low Thermal Resistance PowerPAK® Package
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Si7172DP
Si7172DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Application Note 826
Abstract: 72599 PowerPAK SO-8 SO 42 P PowerPAK SO-8 dimension
Text: Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK SO-8 Single 0.260 6.61 0.150 (3.81) 0.050 0.174 (4.42) 0.154 (1.27) 0.026 (0.66) (3.91) 0.024 (0.61) 0.050 0.032 0.040 (1.27) (0.82) (1.02) Recommended Minimum Pads Dimensions in Inches/(mm)
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21-Jan-08
Application Note 826
72599
PowerPAK SO-8
SO 42 P
PowerPAK SO-8 dimension
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Application Note AN821
Abstract: 71622
Text: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN821 PowerPAK SO-8 Mounting and Thermal Considerations by Wharton McDaniel MOSFETs for switching applications are now available with die on resistances around 1 m and with the capability to
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AN821
16-Mai-13
Application Note AN821
71622
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SO 42 P
Abstract: No abstract text available
Text: Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK SO-8 Dual 0.260 6.61 0.150 (3.81) 0.174 0.024 (0.61) 0.050 0.032 0.040 (1.27) (0.82) (1.02) (4.42) 0.065 (1.65) 0.065 (1.65) 0.154 (1.27) 0.050 0.026 (0.66) (3.91) 0.024 (0.61)
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21-Jan-08
SO 42 P
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Untitled
Abstract: No abstract text available
Text: Si7852ADP Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 80 0.017 at VGS = 10 V 30 0.021 at VGS = 8 V 30 Qg (Typ.) 30.5 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si7852ADP
Si7852ADP-T1-E3
Si7852ADP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si7852ADP Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 80 0.017 at VGS = 10 V 30 0.021 at VGS = 8 V 30 Qg (Typ.) 30.5 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si7852ADP
Si7852ADP-T1-E3
Si7852ADP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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vishay so-8 pin dimensions
Abstract: PowerPAK SO-8 vishay power pak SO-8 package dimension so-8 vishay weight an821 Application Note SO8 Exposed PowerPAK 1212-8 Si4874DY Si7446DP
Text: AN821 Vishay Siliconix PowerPAK SO-8 Mounting and Thermal Considerations Wharton McDaniel MOSFETs for switching applications are now available with die on resistances around 1 mΩ and with the capability to handle 85 A. While these die capabilities represent a major advance over what was available
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AN821
28-Feb-06
vishay so-8 pin dimensions
PowerPAK SO-8
vishay power pak SO-8 package dimension
so-8 vishay weight
an821
Application Note SO8 Exposed
PowerPAK 1212-8
Si4874DY
Si7446DP
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Untitled
Abstract: No abstract text available
Text: Si7392DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.00975 at VGS = 10 V 15 0.01375 at VGS = 4.5 V 13 PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 G 4 D 8 D • High-Side DC/DC Conversion
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Si7392DP
2002/95/EC
Si7392DP-T1-E3
Si7392DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si7392DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.00975 at VGS = 10 V 15 0.01375 at VGS = 4.5 V 13 PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 G 4 D 8 D • High-Side DC/DC Conversion
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Si7392DP
2002/95/EC
Si7392DP-electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SiR474DP
Abstract: SIR474
Text: SiR474DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 20 0.012 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 8 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 3 G • Notebook CPU Core - High-Side Switch
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SiR474DP
SiR474DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SIR474
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Untitled
Abstract: No abstract text available
Text: SiR474DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 20 0.012 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 8 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 3 G • Notebook CPU Core - High-Side Switch
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SiR474DP
SiR474DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SiR474DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 20 0.012 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 8 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 3 G • Notebook CPU Core - High-Side Switch
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SiR474DP
SiR474DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si7392DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.00975 at VGS = 10 V 15 0.01375 at VGS = 4.5 V 13 PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 G 4 D 8 D • High-Side DC/DC Conversion
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Si7392DP
2002/95/EC
Si7392DP-T1-E3
Si7392DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SiRA36DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0028 at VGS = 10 V 40 0.0042 at VGS = 4.5 V 40 Qg (Typ.) 17.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8 S 6.15 mm
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SiRA36DP
SiRA36DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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marking 7200 so8
Abstract: No abstract text available
Text: New Product SiR401DP Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A)d 0.0032 at VGS = - 10 V - 50 0.0042 at VGS = - 4.5 V - 50 0.0077 at VGS = - 2.5 V - 50 Qg (Typ.) 97 nC APPLICATIONS PowerPAK SO-8
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SiR401DP
2002/95/EC
SiR401DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
marking 7200 so8
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