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    PPC POWER TRANSISTOR Search Results

    PPC POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PPC POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3851

    Abstract: 1488A 2SC3851A RL6A2
    Text: SavantIC Semiconductor Product Specification 2SC3851 2SC3851A Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SA1488/1488A APPLICATIONS ·Audio and PPC high voltage power supply ,and general purpose PINNING PIN DESCRIPTION


    Original     		PDF 2SC3851 2SC3851A O-220F 2SA1488/1488A O-220F) 2SC3851 1488A 2SC3851A RL6A2

    2SC3851

    Abstract: 2SC3851A npn ic 25mA 2SA1488
    Text: Inchange Semiconductor Product Specification 2SC3851 2SC3851A Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SA1488/1488A APPLICATIONS ・Audio and PPC high voltage power supply ,and general purpose PINNING PIN DESCRIPTION


    Original     		PDF 2SC3851 2SC3851A O-220F 2SA1488/1488A O-220F) 2SC3851 2SC3851A npn ic 25mA 2SA1488

    2SC3851

    Abstract: 2SC3851A 2SC3851 A
    Text: JMnic Product Specification 2SC3851 2SC3851A Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SA1488/1488A APPLICATIONS ・Audio and PPC high voltage power supply ,and general purpose PINNING PIN DESCRIPTION 1 Base 2


    Original     		PDF 2SC3851 2SC3851A O-220F 2SA1488/1488A O-220F) 2SC3851 2SC3851A 2SC3851 A

    BD947

    Abstract: to-53 a/TO111
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) hFE fT ICBO Max Max toN Max ON) Min (Hz) (A) (s) PD r (CE)«at Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 .15 .


    Original     		PDF SDT3762 SDT3752 SDT1641 SDT3305 BD947 to-53 a/TO111

    TO111

    Abstract: 2SD189 to-53 2SC647 2SD772B
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO on PD hFE fT •CBO Max ON) Min (Hz) (A) r Max (s) Max (CE)sat Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or Mor , (Cont'd) . . . .5 -10 2SD772 2SD772A


    Original     		PDF 2SD772 2SD772A 2SD772B CX702 BD951 BD952 SDT6012 TO111 2SD189 to-53 2SC647

    to-53

    Abstract: TO111 2N5978 NPN
    Text: POWER SILICON TRANSISTORS Item Number »C Part Number Manufacturer Type Max A V (BR)CEO on PD Max hFE fT ON) Min (Hz) r •CBO Max (A) Max (s) (CE)sat Max (Ohms) T Oper Package Style Max (°C) D vie s 20 Watts or More, (Cont'd) . . .5 . .10 . . . -15 -20


    Original     		PDF 2N4112 2SA1069K 2SA12 O-111 O-111 to-53 TO111 2N5978 NPN

    2N7373

    Abstract: JANS2N5153 2N5154 TO-254 2N7372 datasheet 2N7373 transistor 2N5005 2N7372 Schottky jans JANS2N5004
    Text: Spring/Summer 1998 Bipolar Transistors by Carlton B. Mowry, Microsemi PPC, Inc., cmowry@microsemi.com Bipolar transistors have been used in Although only a few space applications for years. There is a examples have been history of device types that are furnished, there are many


    Original     		PDF O-254 O-254 1x105 O-254, 2N7373 JANS2N5153 2N5154 TO-254 2N7372 datasheet 2N7373 transistor 2N5005 2N7372 Schottky jans JANS2N5004

    2SA1106 SANKEN

    Abstract: TO247s BD141 PNP 2sc1116A sanken 2SA1186 SANKEN BU124 texas SDT7605 2sA747A sanken BU124 2SB705
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE fT ON) Min (Hz) ICBO *ON r Max Max (A) (s) Max (Ohms) (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . -10 -15 20 . .


    Original     		PDF BDX22 TIP33E TIP34E 2SC409 2SC410 2SA1106 2SA747A 2SC2837 2SA1007A 2SC2337A 2SA1106 SANKEN TO247s BD141 PNP 2sc1116A sanken 2SA1186 SANKEN BU124 texas SDT7605 2sA747A sanken BU124 2SB705

    BDY96

    Abstract: DTS519 60M6 2n2114 IR519
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Max hFE fT •CBO Max t0N Max Of) ON) Min (HZ) (A) (8) PD r (CE)sat Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) 5 10 15 20 25 30 35 40


    Original     		PDF BU131 BDY97 SDT7909 BU107 XGSR7530 SDT7809 BDY96 DTS519 60M6 2n2114 IR519

    DTS517

    Abstract: BUV28A
    Text: POWER SILICON TRANSISTORS Item Number >C Part Number Manufacturer Type Max A V(8R)CEO Of) PD Max ON) hFE fT 'CBO Max t0N Max Min (HZ) (A) (s) r (CE)ut Max Toper Max (Ohms) (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .15


    Original     		PDF SDT7207 SDT7612 2N2229 2N3473 2N2233 2N3477 SDT12201 DTS517 BUV28A

    KT827A

    Abstract: SDT7530 SDT80 1748-1820 BLX84 BLX86 sk3561 BLX87
    Text: POWER SILICON TRANSISTORS Item Number >C Part Number Manufacturer Type Max A hFE fT ICBO Max Max ton Max on ON) Min (Hz) (A) (a) 97 100 100 100 100 100 100 122 122 125 150 150 175 175 175 175 175 175 175 20 75 30 30 750 10 30 30 20 20 20 20 20 20 30 175


    Original     		PDF SDT3876 SML8003 SML8013 SML8016 SML8071 2N4211 2N3599 SDT44333 KT827V KT827A SDT7530 SDT80 1748-1820 BLX84 BLX86 sk3561 BLX87

    KT827B

    Abstract: KT935A BDX61 kt827 rcs258 TO3VAR package
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO Of) (A) hFE fT •CBO Max PD Max toN Max ON) Min (Hz) (A) (8) r (CE)sat Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) 10 MRF422 MRF422 PT9780


    Original     		PDF MRF422 PT9780 2N2739 2N2745 2N2751 2N1823 StR-5/16 KT827B KT935A BDX61 kt827 rcs258 TO3VAR package

    BD160

    Abstract: 2SC3303 2SD1147 to-53 2sb550
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) hFE fT ICBO Max Max toN Max ON) Mln (Hz) (A) (8) PD r (CE)sat Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .


    Original     		PDF 2N3192 2N1208 2N1250 2N2384 2N4902 2N5867 2N5869 2N4905 2N5068 2N4914 BD160 2SC3303 2SD1147 to-53 2sb550

    2S721

    Abstract: bdy11 TO53 to-53 TO5-3 KT932A SDT5913
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CE on hFE fT ICBO Max Max k>N Max ON) Min (Hz) (A) (s) PD r (CE)Mt Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts r More, (Cont'd) . . . .5 . . . .10 . . . .15 .


    Original     		PDF ST450 2S013 2N2383 2S721 2S723 2N3138 bdy11 TO53 to-53 TO5-3 KT932A SDT5913

    MIL-S-19500

    Abstract: 2902n TRANSISTOR 2n697 2N3700 DIE MIL-S-19500 FOR POWER LINE TRANSISTOR 2N497 2N497 JAN 2n2222 jan 2N657 2N910 JAN
    Text: Winter 1997-1998 Microsemi's Watertown division received QPL Status on the following transistor part types in August 1997. PART TYPE 2N497 & S 2N498 & S 2N656 & S 2N657 & S 2N696 & S 2N697 & S 2N1131 & L 2N1132 & L 2N718A 2N1613 & L 2N720A 2N1893 & S 2N1711 & S


    Original     		PDF 2N497 2N498 2N656 2N657 2N696 2N697 2N1131 2N1132 2N718A 2N1613 MIL-S-19500 2902n TRANSISTOR 2n697 2N3700 DIE MIL-S-19500 FOR POWER LINE TRANSISTOR 2N497 2N497 JAN 2n2222 jan 2N657 2N910 JAN

    PPC2228

    Abstract: PPC2229
    Text: P P C 45E D PRODUCTS CORP • •4 bflSblll OOQOTia 7 ■ PPC NPN Power Da . Transistor PC2229 r-33-2^ C H IP TYPE: AU FEATURES • Epitaxial, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 50,000 A Nominal Collector - Gold - 3,000 A Nominal


    OCR Scan     		PDF PPC2229 PPC2228 T-33-29 PPC2228 PPC2229

    PPC PRODUCTS CORP

    Abstract: 2C4300 2C5333
    Text: b ê S b l S l □□OG'iS? TO? • PPC NPN Power Transistor Chips T -3 > 3 > - o \ FEATURES CHIP TYPE: AP • Epitaxial, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 30,000 A Nominal Collector - Gold - 3,000 A Nominal • Die Thickness ■ 10 Mils Nominal


    OCR Scan     		PDF 2C5333 2C4300 2C4300 PPC PRODUCTS CORP 2C5333

    2C4031

    Abstract: 2C4030 2C4032 2C4033 ic4010
    Text: P P C P R O D U C T S CORP 2C4030 2C4032 LjOE D bflSblll DDDO' ìSLd T7Q • PPC PNP Low Power Transistor Chips 2C4031 2C4033 I ^T-33-O \ FEATURES CHIP TYPE: AJ • Epitaxial, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 20,000 A Nominal


    OCR Scan     		PDF -T-33-0 2C4030 2C4031 2C4032 2C4033 150mA, 500mA, ic4010

    2C6211

    Abstract: 2C6212 2C6213 2C6214
    Text: P P C PRODUC TS Q D • | ■ I CO R P bOE 2C6211 2C6213 D tfiStlIl □ÜDDRb5 TÖ3 ■ PPC PNP High Voltage Power Transistor Chips 2C6212 2C6214 "P3VO\ FEATURES CHIP TYPE: AL • Epitaxial, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 50,000 A Nominal


    OCR Scan     		PDF 2C6211 2C6212 2C6213 2C6214 2C6211 2C6212€ -125mA -125mA, -200V 2C6212

    2C4300

    Abstract: 2C5333 chip die npn transistor
    Text: P P C PRODUCTS CORP bDE D • b flS b m □DOO'ìba 1GG W PPC PNP Power Transistor Chips 2C5333 FEATURES CHIP TYPE: AP • Epitaxial, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 30,000 A Nominal Collector - Gold - 3,000 A Nominal • Die Thickness - 10 Mils Nominal


    OCR Scan     		PDF 2C5333 2C4300 2C5333 2C4300 chip die npn transistor

    lc 5013

    Abstract: 2C5012 2C5013 2C5014 2C5015 LE50
    Text: P P C PRODUCTS CORP 2 2( 12 »13 böSbm bOE » □DOQ'iSfl fl43 • PPC NPN High Voltage Low Power Transistor Chips 2C5014 2C5015 ~ r - 1*7-0 \ CHIP TYPE: AA FEATURES • Triple Diffused, Planar Design • Base, Em itter M etallization: Alum inum • M etallization Thickness: 20,000 A Nom inal


    OCR Scan     		PDF 2C5012 2C5014 2C5013 2C5015 2C5015 50/ia lc 5013 LE50

    2C2151

    Abstract: 120VDC
    Text: P P C PRODUCTS bOE CORP ¡ PPC D 5-A NPN Power Transistor Chips 2C2151 pp Vs-oi FEATURES CHIP TYPE: AN • Epitaxial, Planar Design • C ontact M etallization: Base, Em itter - Alum inum - 30,000 A Nominal C ollector - Gold - 3,000 A Nom inal • Die Thickness - 1 0 Mils N om inal


    OCR Scan     		PDF 30Vdc, 300/xs, 2C2151 120VDC

    Untitled

    Abstract: No abstract text available
    Text: m m a PPC, he. • Micmsemi Progress Powered by Technology 7516 C entral In d u s tria l D rive R iv ie ra B each, F lo rid a 33404 PHONE: 561 842-0305 FAX: (561)845-7813 APPLICATIONS: • • • Drivers Switches Medium-Power A m plifiers FEMURS: • •


    OCR Scan     		PDF 2N3766 2N3740) 300jaS, MSC1039

    Untitled

    Abstract: No abstract text available
    Text: m m a PPC, he. • Micmsemi Progress Powered by Technology 7516 C entral In d u s tria l D rive R iv ie ra B each, F lo rid a 33404 PHONE: 561 842-0305 FAX: (561)845-7813 APPLICATIONS: • • • Drivers Switches Medium-Power A m plifiers FEMURS: • •


    OCR Scan     		PDF 2N3741A 300jaS, MSC1042