UPD23C2000
Abstract: No abstract text available
Text: JJPD23C2000 2,097,152-Bit Mask-Programmable CMOS ROM Description Pin Configurations Th e fiP D 23 C 2 000 is a 2,097,152-bit ROM fab ricated w ith C M O S silicon-gate technology. Th e device is static in operation and ca n be organized as 131,072 w ords by 16
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uPD23C2000
152-Bit
JJPD23C2000
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UPD23C2000
Abstract: 33AO nec 40-pin plastic dip
Text: N Hi fiPD23C2000 2,097,152-Bit Mask-Programmable CMOS ROM Description Pin Configurations Th e ftP D 23 C 200 0 is a 2,097,152-bit ROM fab ricated with C M O S siiicon-gate technology. T h e device is static in operation and can be organized as 131,072 w ords by 16
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uPD23C2000
152-Bit
PD23C2000
fPD23C2000
pPD23C2000
33AO
nec 40-pin plastic dip
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al 232 nec
Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258
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KM41C256
KM41C257
KM41C258
KM41C464
KM41C466
KM41C1000
KM41C1001
KM41C1002
KM44C256
KM44C258
al 232 nec
TC55B4257
MB832001
NM9306
eeprom Cross Reference
D41264
TC5116100
HN28C256
NM9307
oki cross reference
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UPD23C2000
Abstract: No abstract text available
Text: p PD 2 3C 200 0A NEC 2,097,152-Blt Mask-Programmable CMOS ROM NEC Electronics Inc. Description Pin Configuration The /iPD23C2000A is a 2,097,152-bit ROM fabricated with CMOS silicon-gate technology. This device is static in operation and can be organized as 131,072 words by
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152-Blt
40-Pin
uPD23C2000A
152-bit
PD23C2000A
iPD23C2000A-1
iPD23C2000A
000A-1
UPD23C2000
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