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    PD23C2000 Search Results

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    toshiba 32k*8 sram

    Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
    Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258


    OCR Scan     		PDF KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A

    PD23C2000C

    Abstract: UPD23C2000 23C2000
    Text: jk / jr v " * ÌV IE / V NEC Electronics Inc. //P D 23C 20 00 2 ,0 9 7 ,1 5 2 -B IT M A SK -^R 0 G R a m m a b l e CM O S ROM Description Pin Configurations The^P[ 23C2000 is a 2,097,152-bit ROM fabricated with CM OS ‘¡ilicon-gate technology. Static in operation and


    OCR Scan     		PDF uPD23C2000 152-bit PD23C2000 40-pin 52-pin 3-004984A PD23C2000C 23C2000

    UPD23C2000

    Abstract: No abstract text available
    Text: PD23C2000 2,097,152-Bit Mask-Programmable CMOS ROM Description Pin Configurations Th e fiP D 23 C 2 000 is a 2,097,152-bit ROM fab ricated w ith C M O S silicon-gate technology. Th e device is static in operation and ca n be organized as 131,072 w ords by 16


    OCR Scan     		PDF uPD23C2000 152-Bit JJPD23C2000

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100

    TC55B8128

    Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6


    OCR Scan     		PDF TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256

    UPD23C2000

    Abstract: 33AO nec 40-pin plastic dip
    Text: N Hi PD23C2000 2,097,152-Bit Mask-Programmable CMOS ROM Description Pin Configurations Th e ftP D 23 C 200 0 is a 2,097,152-bit ROM fab ricated with C M O S siiicon-gate technology. T h e device is static in operation and can be organized as 131,072 w ords by 16


    OCR Scan     		PDF uPD23C2000 152-Bit PD23C2000 fPD23C2000 pPD23C2000 33AO nec 40-pin plastic dip

    al 232 nec

    Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
    Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258


    OCR Scan     		PDF KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 al 232 nec TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference

    D7528AC

    Abstract: uPD27C2000 23C4000 pd77p20 D27c512 PD75402 d27c1001 pd75216 D75328 JPD7527A
    Text: NEC NEC E lectronics Inc. ROM Code Submission Guide Application Note 90-05 Introduction Minimum Requirements This a p p lic a tio n n o te p ro vid e s g u id e lin e s fo r su b m it­ tin g th e d a ta file s used by NEC to p ro g ra m se m icu s­ to m iz e d in te g ra te d c irc u its a c o m p le te lis t of w h ich


    OCR Scan     		PDF 30000-J6 FFFF-16 D7528AC uPD27C2000 23C4000 pd77p20 D27c512 PD75402 d27c1001 pd75216 D75328 JPD7527A

    UPD23C2000

    Abstract: No abstract text available
    Text: p PD 2 3C 200 0A NEC 2,097,152-Blt Mask-Programmable CMOS ROM NEC Electronics Inc. Description Pin Configuration The /PD23C2000A is a 2,097,152-bit ROM fabricated with CMOS silicon-gate technology. This device is static in operation and can be organized as 131,072 words by


    OCR Scan     		PDF 152-Blt 40-Pin uPD23C2000A 152-bit PD23C2000A iPD23C2000A-1 iPD23C2000A 000A-1 UPD23C2000