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    PROPERTIES OF TRANSISTOR Search Results

    PROPERTIES OF TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PROPERTIES OF TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    GaAs FET operating junction temperature

    Abstract: 5257 transistor chip die hp transistor HP transistor cross reference mtt2
    Text: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. I. Thermal Resistance Thermal Resistance . 1 A. Definition .


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    ED-19, 5966-3084E GaAs FET operating junction temperature 5257 transistor chip die hp transistor HP transistor cross reference mtt2 PDF

    mosfet modern applications

    Abstract: Circuit Protection Devices NTC Thermistors NTC Thermistor FOR Thermistor NTC NTC THERMISTORS
    Text: NTC thermistors for temperature compensation of amplifiers Description Amplifiers e.g. bipolar transistors, MOSFET, HEMT, … are important devices in all modern communication and electronic systems. Therefore a temperature drift of their electrical properties, which can


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    Untitled

    Abstract: No abstract text available
    Text: 37 EMBEDDED Graphics LCDs are increasingly being used in embedded applications. Professor Dr Dogan Ibrahim of the Near East University in Cyprus describes the properties of these displays and explains the design of a simple colour graphic LCD GLCD based project


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    thPIC18FJ PDF

    SP1750

    Abstract: SP1000 SP1950 SP400 SP2000 SP175
    Text: Choosing the right Sil-Pad Starts with the Mechanical and Electrical Properties MOUNTING TECHNIQUES MOUNTING PRESSURE AND Typical mounting techniques include: • A Spring clip, which exerts a centralized clamping force on the body of the transistor. The greater the mounting


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    O-220, SP400 SP1000® SP2000® SPK-10® SP1750 SP1000 SP1950 SP2000 SP175 PDF

    smd fuse marking 20

    Abstract: smd fuse marking SMD fuse 4A FUSE 102 THERMAL Fuse BEH052230634001 Thin Film Resistors Overcurrent D-25746 thick film chip fuse
    Text: VISHAY BEYSCHLAG Resistive Products Technical Note Overcurrent Protection with Thin Film Resistors Technology By Ove Hach, Vishay BCcomponents Beyschlag GmbH Before analysing the electrical properties of the various types of chip fuses on the market, it is important first to


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    D-25746 29-Apr-10 smd fuse marking 20 smd fuse marking SMD fuse 4A FUSE 102 THERMAL Fuse BEH052230634001 Thin Film Resistors Overcurrent thick film chip fuse PDF

    Untitled

    Abstract: No abstract text available
    Text: Heat Transfer Compounds Page 1 of 2 Non-Silicone Heat Transfer Compound 8610 z Special synthetic base, fortified with metal oxides and compounded to a paste-like consistency for ease of application z High efficient thermal conductive properties { Means more rapid transfer of heat for longer component life


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    D-149 8610-60G 8610-1P com/products/8610 PDF

    pnp phototransistor

    Abstract: 7400 logic gate ic IC TTL 7400 7400 TTL datasheet 7400 TTL TTL 7400 propagation delay in IC TTL 7400 7400 family TTL phototransistor with amplifier 7400 datasheet ttl gate
    Text: Applications of Optocouplers Appnote 2 The IL1 is the first in a family of optocouplers. These products are also called photon coupled isolators, photocouplers, photocoupled pairs and optically coupled pairs. All of the characteristics of the IL1 are electrical: it has no external optical properties. Hence optoisolators are not optoelectronic devices; they


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    1-888-Infineon pnp phototransistor 7400 logic gate ic IC TTL 7400 7400 TTL datasheet 7400 TTL TTL 7400 propagation delay in IC TTL 7400 7400 family TTL phototransistor with amplifier 7400 datasheet ttl gate PDF

    pnp phototransistor

    Abstract: 7400 TTL 7400 logic gate ic IC TTL 7400 information OF ic 7400 phototransistor "linear output" TTL 7400 7400 ttl gate digital ic 7400 phototransistor with amplifier
    Text: Applications of Optocouplers Appnote 2 The IL1 is the first in a family of optocouplers. These products are also called photon coupled isolators, photocouplers, photocoupled pairs and optically coupled pairs. All of the characteristics of the IL1 are electrical: it has no external optical properties. Hence optoisolators are not optoelectronic devices; they


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    7400 TTL

    Abstract: IC TTL 7400 pnp phototransistor 7400 logic gate ic Phototransistor with base emitter TTL 7400 propagation delay Optocouplers for ttl output 7400 IC series phototransistor with amplifier IC TTL 7400 propagation delay
    Text: Applications of Optocouplers Appnote 2 The IL1 is the first in a family of optocouplers. These products are also called photon coupled isolators, photocouplers, photocoupled pairs and optically coupled pairs. All of the characteristics of the IL1 are electrical: it has no external optical properties. Hence optoisolators are not optoelectronic devices; they


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    17-August-01 7400 TTL IC TTL 7400 pnp phototransistor 7400 logic gate ic Phototransistor with base emitter TTL 7400 propagation delay Optocouplers for ttl output 7400 IC series phototransistor with amplifier IC TTL 7400 propagation delay PDF

    CECC 30801

    Abstract: No abstract text available
    Text: Technical Summary and Application Guidelines SECTION 5 MECHANICAL AND THERMAL PROPERTIES OF CAPACITORS 5.1 Acceleration NOTE: These recommendations also in compliance with EIA are guidelines only. With care and control, smaller footprints may be considered for


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    2000Hz, TPM/CWR11 MIL-C-55365/8 CWR11) MIL-C-55365/4 CWR09) CECC 30801 PDF

    SFH6721

    Abstract: 2N2222 transistor output curve OPTOCOUPLER HAND BOOK optocoupler darlington SFH6136 SFH6343 SFH6345 SFH6711 SFH6732 SFH600-3
    Text: VISHAY Vishay Semiconductors Optocoupler Common Mode Transient Immunity CMTI – Theory and Practical Solutions (Appnote 83) 1 Introduction This application note discusses the common mode transient immunity (CMTI) properties of optocouplers. It covers phototransistor output and optically coupled


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    24-Nov-03 SFH6721 2N2222 transistor output curve OPTOCOUPLER HAND BOOK optocoupler darlington SFH6136 SFH6343 SFH6345 SFH6711 SFH6732 SFH600-3 PDF

    uv flame sensor

    Abstract: thermal conductivity sensor 27713 4h sic ballistic sensor Cree Microwave cree package structure X 1017 sac 326 2771J
    Text: PHYSICAL AND ELECTRONIC PROPERTIES OF SILICON CARBIDE The physical and electronic properties of SiC make it the foremost semiconductor material for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices. A summary of the most impor­


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    2771J 161-IMO uv flame sensor thermal conductivity sensor 27713 4h sic ballistic sensor Cree Microwave cree package structure X 1017 sac 326 2771J PDF

    diode 12A3

    Abstract: No abstract text available
    Text: Insulated Gate Bipolar Transistors IGBT The IGBT is a combination of bipolar and MOS technologies. The best features of bipolar transistors are merged with the voltagecontrolled properties of MOSFETs. Advantages to the user: • rugged, short-circuit-proof device


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    -12D1 -12D1 -06P1 -12P1 -03G4 -03S4 -12A3/A4 diode 12A3 PDF

    igbt types

    Abstract: IGBT snubber for inductive load igbt igbt in smps l series IGBT design drive circuit of IGBT
    Text: Insulated Gate Bipolar Transistors IGBT The IGBT is a combination of bipolar and MOS technologies. The best features of bipolar transistors are synergistically melded with the voltagecontrolled properties of MOSFETs. Sum mary of various IGBT types. Table 1: Standard devices (page 8)


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    -12S3 -12S4 -12G3 -12G4 igbt types IGBT snubber for inductive load igbt igbt in smps l series IGBT design drive circuit of IGBT PDF

    IGBT snubber for inductive load

    Abstract: No abstract text available
    Text: Insulated Gate Bipolar Transistors IGBT The IGBT is a combination of bipolar and MOS technologies. The best features of bipolar transistors are synergistically melded with the voltagecontrolled properties of MOSFETs. Advantages to the user: • rugged, short-circuit-proof device


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    -12S4 IGBT snubber for inductive load PDF

    BTS 3900 a

    Abstract: BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1
    Text: Insulated Gate Bipolar Transistors IGBT The IGBT is a com bination of bipolar and MOS technologies. The best features of bipolar transistors are merged with the voltage-controlled properties of M OSFETs. A dvantages to the user: • rugged, short-circuit-proof device


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    T-227B BTS 3900 a BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1 PDF

    MAB8400

    Abstract: PCF84CXXXA 3843 application note a698 MST 718 RBS trx MAB8048 PC10 PC11 jco resonator
    Text: Preliminary specification Philips Semiconductors 8-bit microcontrollers PCF84CXXXA Family 1 INTRODUCTION 3 GENERAL DESCRIPTION This data sheet describes the shared properties of the PCF84CXXXA family of microcontrollers and its quickly growing number of derivative microcontrollers. For a


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    PCF84CXXXA MAB8048) MBA231 7110fl5b 007MbSÃ MAB8400 3843 application note a698 MST 718 RBS trx MAB8048 PC10 PC11 jco resonator PDF

    mst 702 lf

    Abstract: LA617 mst 702 9398 393 40011
    Text: Preliminary specification Philips Semiconductors 8-bit microcontrollers PCF84CXXXA Family 1 INTRODUCTION 3 GENERAL DESCRIPTION This data sheet describes the shared properties of the PCF84CXXXA family of microcontrollers and its quickly growing number of derivative microcontrollers. For a


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    PCF84CXXXA MAB8048) 7110fl5b mst 702 lf LA617 mst 702 9398 393 40011 PDF

    DN7-11

    Abstract: DP7-11
    Text: PHILIPS DB7-11 DH7-11 DN7-11 DP7-11 CATHODE-RAY TUBE for use In transistorized oscilloscopes with flat face and post-deflection acceleration by means of a helical electrode SCREEN For screen properties please refer to front of this section Useful screen diameter


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    DB7-11 DH7-11 DN7-11 DP7-11 1100g DP7-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Glossary of Letters and Symbols *> General The following letters are used to indicate electrical properties VcER of transistors. V: Voltage I : Current P: Power f : Frequency w ith resistor inserted betw een the base and em itter. C: Capacitance N: Noise This is determined by V cbo and Rbe.


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    PDF

    4BB7

    Abstract: a699 3843 application note RBL 43 P TRANSISTOR MAB8048 MAB8400 PC10 PC11 PCD33XXA
    Text: Product specification Philips Semiconductors 8-bit telecom microcontrollers PCD33XXA Family 1 INTRO D UCTIO N 3 G ENERAL DESCRIPTION This data sheet describes the shared properties of the PCD 33XXA fam ily of m icrocontrollers and its quickly growing num ber of derivative m icrocontrollers. For a


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    PCD33XXA MAB8048) MBA281 4BB7 a699 3843 application note RBL 43 P TRANSISTOR MAB8048 MAB8400 PC10 PC11 PDF

    Burr-Brown Application Note AN-165

    Abstract: design of 4-20mA transmitter for bridge type transducer using op-amp burr-brown linear catalog diode germanium catalog band pass active filters uaf42 6.4V Zener spice model Siliconix FET Design Catalog bourns torque sensor harmonic HLP 4200 solomon lcd lm
    Text: Burr-Brown Collection o f A p p licatio n s Bulletins L B U R R - BROWN • b b i TABLE OF CONTENTS SECTION 1, Burr-Brown Technical Literature Thermal and electrical properties of selected packaging m aterials. 1


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    OPA121 OPA128 OPA177 OPA2107 OPA2111 OPA2604 OPA27 OPA404 OPA445 OPA602 Burr-Brown Application Note AN-165 design of 4-20mA transmitter for bridge type transducer using op-amp burr-brown linear catalog diode germanium catalog band pass active filters uaf42 6.4V Zener spice model Siliconix FET Design Catalog bourns torque sensor harmonic HLP 4200 solomon lcd lm PDF

    P-T0263-7-3

    Abstract: dissipation thermic 5206-2G SIEMENS MOTOR
    Text: 7 Thermal Properties and the Cooling of PICs M General The power dissipation occurring in PICs generates heat which needs to be removed via suitable heatconducting materials. In the case of low and medium dissipation, the packages in which the PICs are sup­


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    5208-6G 5208-6G, P-T0263-7-3 dissipation thermic 5206-2G SIEMENS MOTOR PDF

    74s281

    Abstract: bit-slice SN54S/74S281 Aop catalog SBP0400 74S482
    Text: 1. INTRODUCTION The SBP0400A and SBP0401A are 4-bit expandable parallel binary processor elements, each monolithically integrating 1660 functional gates. These controller/processor building blocks combine the unique properties of Integrated Injection Logic |2 l | with a microprogrammable bit-siice architecture to offer a high degree of


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    SBP0400A SBP0401A S8P04D1A SBP0400ACN SBP0401ACN SBP0400AM SBP0401AM 74s281 bit-slice SN54S/74S281 Aop catalog SBP0400 74S482 PDF