18f2580
Abstract: PIC18F2480 PIC18XXX8 PIC18FX480 HD 4480 PIC18F4480 application example code PIC18F2580 PIC18F4480 PIC18F4580 E11H
Text: PIC18F2480/2580/4480/4580 Data Sheet 28/40/44-Pin Enhanced Flash Microcontrollers with ECAN Technology, 10-Bit A/D and nanoWatt Technology 2007 Microchip Technology Inc. Preliminary DS39637C Note the following details of the code protection feature on Microchip devices:
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PIC18F2480/2580/4480/4580
28/40/44-Pin
10-Bit
DS39637C
DS39637C-page
18f2580
PIC18F2480
PIC18XXX8
PIC18FX480
HD 4480
PIC18F4480 application example code
PIC18F2580
PIC18F4480
PIC18F4580
E11H
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Y51 h 85c
Abstract: 4560 opamp 7377 y133 KS0606 Y176 CTR CAPACITOR DATASHEET Y152 Y228 Y239
Text: 240CH SOURCE DRIVER FOR TFT LCD KS0606 INTRODUCTION KS0606 is 240 output liquid crystal display LCD source driver. It is used in the liquid crystal display panel for pocket sized TV, CNS etc. After sampling and holding at the SAMPLE-HOLD circuit at the clock synchronized timing, the R,G,B, 3CH. video
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240CH
KS0606
KS0606
Y1Y240Y240Y1)
Y51 h 85c
4560 opamp
7377
y133
Y176
CTR CAPACITOR DATASHEET
Y152
Y228
Y239
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PAR/2900K
Abstract: No abstract text available
Text: DATA SHEET CLL042-1218A5-273M1A2 DATA SHEET 1/11 1. Scope of Application This data sheet is applied to the LED package, model CLL042-1218A5-273M1A2. 2. Part code CLL 042 - 12 18 A5 - 27 3 M1 A2 [1] [2] [3] [4] [5] [6] [1] Part Code [2] Dies in series quantity
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CLL042-1218A5-273M1A2
CLL042-1218A5-273M1A2.
2700K
80min.
PAR/2900K
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K4H510438D-ZCB3
Abstract: K4H510438DZCCC tsop-ii 66PIN JEDEC TRAY "Material Declaration Sheet" tsop-ii 66 JEDEC TRAY k4h511638d
Text: K4H510438D K4H510838D K4H511638D DDR SDRAM 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4H510438D
K4H510838D
K4H511638D
512Mb
430KB
438KB
204KB
DDR266/333,
66TSOP2)
430KB
K4H510438D-ZCB3
K4H510438DZCCC
tsop-ii 66PIN JEDEC TRAY
"Material Declaration Sheet"
tsop-ii 66 JEDEC TRAY
k4h511638d
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HYMD512646A8J
Abstract: No abstract text available
Text: 128Mx64 bits Unbuffered DDR SDRAM DIMM HYMD512646A8J DESCRIPTION Preliminary Hynix HYMD512646A L 8J series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 128Mx64 high-speed memory arrays. Hynix HYMD512646A(L)8J series
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128Mx64
HYMD512646A8J
HYMD512646A
184-pin
64Mx8
400mil
184pin
HYMD512646A8J
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ps5120
Abstract: No abstract text available
Text: MC100EP196 3.3V ECL Programmable Delay Chip with FTUNE The MC100EP196 is a programmable delay chip PDC designed primarily for clock deskewing and timing adjustment. It provides variable delay of a differential NECL/PECL input transition. It has similar architecture to the EP195 with the added feature of further tuneability in
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MC100EP196
EP195
EP196
BRD8011/D.
MC100EP196
AN1405/D
AN1406/D
AN1503/D
AN1504/D
ps5120
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PS-4480 B
Abstract: E196 MC100 MC100EP196 ps 5040 750MV
Text: MC100EP196 3.3V ECL Programmable Delay Chip with FTUNE The MC100EP196 is a programmable delay chip PDC designed primarily for clock deskewing and timing adjustment. It provides variable delay of a differential NECL/PECL input transition. It has similar architecture to the EP195 with the added feature of further tuneability in
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MC100EP196
MC100EP196
EP195
EP196
MC100EP196/D
PS-4480 B
E196
MC100
ps 5040
750MV
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JBT6K14-AS
Abstract: hvr diodes toshiba 2647 T6K14 VR12 LV 1084 73 Voltage Regulator 7 segment display 10 pin 4026 digital counter
Text: T6K14 TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T6K14 COLUMN ROW DRIVER LSI FOR DOT MATRIX GRAPHIC LCD The TOSHIBA T6K14 is a driver for a small or medium scale dot matrix graphic LCD, especially for reflecting color STN LCD. This LSI incorporate 65 row output, 128 column output and 65 x
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T6K14
T6K14
JBT6K14-AS
hvr diodes
toshiba 2647
VR12
LV 1084 73
Voltage Regulator
7 segment display 10 pin
4026 digital counter
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MC100
Abstract: MC100EP196 MC100EP196FA MC100EP196FAR2 Variable Resistor 3305
Text: MC100EP196 Product Preview 3.3V/5VĄECL Programmable Delay Chip with FTUNE The MC100EP196 is a programmable delay chip PDC designed primarily for clock deskewing and timing adjustment. It provides variable delay of a differential NECL/PECL input transition. It has similar
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MC100EP196
MC100EP196
EP195
EP196
r14525
MC100EP196/D
MC100
MC100EP196FA
MC100EP196FAR2
Variable Resistor 3305
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K4X51323PC-8GC3
Abstract: No abstract text available
Text: Preliminary K4X51323PC - 7 8 E/G Mobile-DDR SDRAM 16M x32 Mobile-DDR SDRAM 1 Revision 0.6 October 2005 Preliminary K4X51323PC - 7(8)E/G Mobile-DDR SDRAM Document Title 16M x32 Mobile-DDR SDRAM Revision History Revision No. History Draft Date Remark 0.0 - First version for target specification
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K4X51323PC
90FBGA
DDR333/DDR266
DDR266/DDR222.
247KB
128KB
277KB
K4X51323PC-8GC30
K4X51323PC-8GC3T
K4X51323PC-8GC3
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Untitled
Abstract: No abstract text available
Text: MC100EP196 3.3V ECL Programmable Delay Chip with FTUNE The MC100EP196 is a programmable delay chip PDC designed primarily for clock deskewing and timing adjustment. It provides variable delay of a differential NECL/PECL input transition. It has similar
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MC100EP196
MC100EP196
EP195
EP196
MC100EP196/D
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Untitled
Abstract: No abstract text available
Text: MC100EP196A 3.3 V ECL Programmable Delay Chip With FTUNE The MC100EP196A is a Programmable Delay Chip PDC designed primarily for clock deskewing and timing adjustment. It provides variable delay of a differential NECL/PECL input transition. It has similar architecture to the EP195 with the added feature of further
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MC100EP196A
MC100EP196A
EP195
EP196A
MC100EP196A/D
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Untitled
Abstract: No abstract text available
Text: MC100EP196B 3.3 V ECL Programmable Delay Chip With FTUNE Descriptions The MC100EP196B is a Programmable Delay Chip PDC designed primarily for clock deskewing and timing adjustment. It provides variable delay of a differential NECL/PECL input transition. It has similar
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MC100EP196B
MC100EP196B
EP195
EP196B
MC100EP196B/D
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MC100EP195
Abstract: MC100EP195FA MC100EP195FAR2 MC10EP195 MC10EP195FA MC10EP195FAR2 marking EE
Text: MC10EP195, MC100EP195 3.3V ECL Programmable Delay Chip The MC10/100EP195 is a programmable delay chip PDC designed primarily for clock deskewing and timing adjustment. It provides variable delay of a differential NECL/PECL input transition. The delay section consists of a programmable matrix of gates and
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MC10EP195,
MC100EP195
MC10/100EP195
EP195
MC10EP195/D
MC100EP195
MC100EP195FA
MC100EP195FAR2
MC10EP195
MC10EP195FA
MC10EP195FAR2
marking EE
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Untitled
Abstract: No abstract text available
Text: MC100EP196B 3.3 V ECL Programmable Delay Chip With FTUNE Descriptions The MC100EP196B is a Programmable Delay Chip PDC designed primarily for clock deskewing and timing adjustment. It provides variable delay of a differential NECL/PECL input transition. It has similar
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MC100EP196B
MC100EP196B
EP195
EP196B
MC100EP196B/D
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Untitled
Abstract: No abstract text available
Text: MC100EP195B 3.3V ECL Programmable Delay Chip Descriptions The MC100EP195B is a Programmable Delay Chip PDC designed primarily for clock deskewing and timing adjustment. It provides variable delay of a differential NECL/PECL input transition. The delay section consists of a programmable matrix of gates and
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MC100EP195B
MC100EP195B
EP195B
MC100EP195B/D
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2415 9450
Abstract: ic 4440 circuit diagram QFN-32 footprint MC100EP195 MC10EP195 QFN32 LQFP32 footprint
Text: MC10EP195, MC100EP195 3.3V ECL Programmable Delay Chip The MC10/100EP195 is a Programmable Delay Chip PDC designed primarily for clock deskewing and timing adjustment. It provides variable delay of a differential NECL/PECL input transition. http://onsemi.com
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MC10EP195,
MC100EP195
MC10/100EP195
EP195
MC10EP195/D
2415 9450
ic 4440 circuit diagram
QFN-32 footprint
MC100EP195
MC10EP195
QFN32
LQFP32 footprint
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Untitled
Abstract: No abstract text available
Text: MC10EP195, MC100EP195 3.3V ECL Programmable Delay Chip The MC10/100EP195 is a Programmable Delay Chip PDC designed primarily for clock deskewing and timing adjustment. It provides variable delay of a differential NECL/PECL input transition. http://onsemi.com
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MC10EP195,
MC100EP195
MC10/100EP195
EP195
MC10EP195/D
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Untitled
Abstract: No abstract text available
Text: Bulletin 12063/A International ^R ectifier SD153N/R SERIES FAST RECOVERY DIODES Stud Version Features • H ig h p o w e r F A S T re c o v e ry d io d e s e r ie s ■ 1 .0 to 1 .5 |js re c o v e ry tim e ■ H ig h v o lta g e ra tin g s up to 1 6 0 0 V
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12063/A
SD153N/R
D-616
D-617
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L512F
Abstract: ac202a AZ 280 chip AC-202A on line ups circuit schematic diagram E72445
Text: I E5HE537 55E » CRYD0 Ï1 co :_— □Ü0D7GÛ _ — , 1 Tb • CRY 'JM fô U W CLÛfôü@@ 0@@ffi)fi^0€/MQ Ki / î ' ' ; ' -, :j . - Series Type L-Case style - Ceramic Bas.e) , Current . 3 -15 Amps 5 - 25 Amps 6 - 42.5 Amps* Example: L512F
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E5HE537
L512F
E72445)
L512F
ac202a
AZ 280 chip
AC-202A
on line ups circuit schematic diagram
E72445
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Untitled
Abstract: No abstract text available
Text: • R A dvanced W 'æ APT pow er Te c h n o l o g y ' io o v 10 M 11 JV R i 44 a 0.011 q POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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OT-227
APT10M11
E145592
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str 4479
Abstract: 3N204 3n206 3N204 equivalent 3N205
Text: T Y P ES 3N204, 3N205, 3N206 N -C H A N N E L D U A L-G A T E D EP LETIO N -TYP E IN S U LA T E D -G A T E F IE LD -E FF E C T TR A N S IS TO R S B U L L E T IN N O . D L -S 7 2 1 1 7 1 7 , M A Y 1 97 2 D EPLETIO N -TYPE MOS S ILIC O N TRAN SISTO RS • Monolithic Gate-Protection Diodes
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3N204,
3N205,
3N206
str 4479
3N204
3N204 equivalent
3N205
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1N4475
Abstract: 1N4465 1N4479 1N4466 1N4433 IN47 5C 1N4474 1N4469 1N4535 MIL-S-19500/406
Text: Zener Voltage 3t Izr @ mA Zener Type No. Volts 1N4418 1N4419 1N4420 39.0 43.0 47.0 1N4421 1N4422 1N4423 1N4424 1N4425 1N4426 51.0 56.0 62.0 Max. Zener Impedance @ Izt Ohms 21.0 23.0 26.0 30.0 33.0 40.0 68.0 75.0 82.0 6.5 6.0 5.5 5.0 4.5 4.0 3.7 3.3 3.0 1N4427
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1N4418
1N4419
1N4420
1N4421
1N4422
1N4423
1N4424
1N4425
1N4426
1N4427
1N4475
1N4465
1N4479
1N4466
1N4433
IN47 5C
1N4474
1N4469
1N4535
MIL-S-19500/406
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S10K625
Abstract: S10K250 S10K275 Siemens varistor
Text: SIEMENS/ SPCLt SENICONDS ~ aa 0 2 3 bBHD 0 0 1 4 5 2 7 û ~ 7 -c / / - X - / SIOV’s Metal Oxide Varistors for Transient Suppression Features: □ Nanosec. Switching Response Time, < 15 nsec. with minimal lead length. □ HlghTransient Current Capability(up
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