Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PSPICE MODEL LIST TRANSISTOR Search Results

    PSPICE MODEL LIST TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    PSPICE MODEL LIST TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    PSPICE Orcad

    Abstract: ORCAD BD48G BD49 ORCAD PSPICE BOOK BD45 BD46 BD48 BD52 BD53
    Text: SPICE Models: ROHM Voltage Detector ICs BD48□□G/FVE,BD49□□G/FVE,BD52□□G/FVE,BD53□□G/FVE, BD45□□□G,BD46□□□G,BU48□□G/FVE/F,BU49□□G/FVE/F, BU42□□G/FVE/F,BU43□□G/FVE/F,BD47□□G 1. No.10006EAY01 INTRODUCTION 1.1 SPICE


    Original     		BD48G/FVE BD49G/FVE BD52G/FVE BD53G/FVE, BD45G BD46G BU48G/FVE/F BU49G/FVE/F, BU42G/FVE/F BU43G/FVE/F PSPICE Orcad ORCAD BD48G BD49 ORCAD PSPICE BOOK BD45 BD46 BD48 BD52 BD53 PDF

    AN9321

    Abstract: AN9322 RF1S45N06SM RF1S45N06SM9A RFG45N06 RFP45N06 TB334 F1S45N06
    Text: RFG45N06, RFP45N06, RF1S45N06SM Data Sheet January 2002 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs Features • 45A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		RFG45N06, RFP45N06, RF1S45N06SM TA49028. AN9321 AN9322 RF1S45N06SM RF1S45N06SM9A RFG45N06 RFP45N06 TB334 F1S45N06 PDF

    fd3055

    Abstract: No abstract text available
    Text: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		RFD3055, RFD3055SM, RFP3055 TA49082. fd3055 PDF

    TC227

    Abstract: irfu9220 IF9220 IRFR9220 TB334
    Text: IRFR9220, IRFU9220 Data Sheet 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement-mode silicon gate power fieldeffect transistors designed for applications such as switching


    Original     		IRFR9220, IRFU9220 TA17502. TC227 irfu9220 IF9220 IRFR9220 TB334 PDF

    TC227

    Abstract: No abstract text available
    Text: IRFR9220, IRFU9220 Data Sheet 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement-mode silicon gate power fieldeffect transistors designed for applications such as switching


    Original     		IRFR9220, IRFU9220 TA17502. TC227 PDF

    FD3055

    Abstract: IS433 Fp3055 RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A
    Text: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		RFD3055, RFD3055SM, RFP3055 TA49082. FD3055 IS433 Fp3055 RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A PDF

    Untitled

    Abstract: No abstract text available
    Text: RFG45N06, RFP45N06, RF1S45N06SM Data Sheet Title FG4 06, P45 6, 1S4 06S bt A, V, 28 m, anwer OSTs utho July 1999 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		RFG45N06, RFP45N06, RF1S45N06SM PDF

    FD3055

    Abstract: fp3055 TA49082 IS433 RFD3055
    Text: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		RFD3055, RFD3055SM, RFP3055 TA49082. TB334 RFD3055SM RFD3055SM9A136 RFD3055SM9A O-252 FD3055 fp3055 TA49082 IS433 RFD3055 PDF

    Untitled

    Abstract: No abstract text available
    Text: HRF3205, HRF3205S Data Sheet 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		HRF3205, HRF3205S PDF

    HRF3205 equivalent

    Abstract: HRF3205ST TB334 HRF3205 HRF3205S
    Text: HRF3205, HRF3205S Data Sheet 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		HRF3205, HRF3205S HRF3205 equivalent HRF3205ST TB334 HRF3205 HRF3205S PDF

    AN9321

    Abstract: AN9322 RFD3N08L RFD3N08LSM RFD3N08LSM9A TB334
    Text: RFD3N08L, RFD3N08LSM Data Sheet 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs Features • 3A, 80V The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving


    Original     		RFD3N08L, RFD3N08LSM RFD3N08L RFD3N08LSM AN9321 AN9322 RFD3N08LSM9A TB334 PDF

    AN9322

    Abstract: AN9321 RFD3N08L RFD3N08LSM RFD3N08LSM9A TB334
    Text: RFD3N08L, RFD3N08LSM Data Sheet Title FD3 8L, D3 8LS bt A, V, 00 m, gic vel, Cha el wer OSTs utho July 1999 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs Features The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power field effect transistors


    Original     		RFD3N08L, RFD3N08LSM 175oC TB334 TA09922. RFD3N08L O-251AA O-252AA F3N08L AN9322 AN9321 RFD3N08L RFD3N08LSM RFD3N08LSM9A TB334 PDF

    HRF3205 equivalent

    Abstract: HRF3205 equivalent mosfet number DATASHEET hrf3205 HRF3205 data sheet mosfet HRF3205 HRF3205S HRF3205ST TB334
    Text: HRF3205, HRF3205S Data Sheet 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		HRF3205, HRF3205S HRF3205 equivalent HRF3205 equivalent mosfet number DATASHEET hrf3205 HRF3205 data sheet mosfet HRF3205 HRF3205S HRF3205ST TB334 PDF

    FD3055

    Abstract: Fp3055
    Text: RFD3055, RFD3055SM, RFP3055 Data Sheet Title FD3 5, D30 SM, P30 bt A, V, 50 m, anwer OSTs utho eyrds terrpoon, July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		RFD3055, RFD3055SM, RFP3055 FD3055 Fp3055 PDF

    transformer-less AC-DC converter

    Abstract: SLAC audio compression transmission line model orcad pspice *74AS* spice models am79231 AMD AM3 Processor Functional AMD SLIC Am79202/03 PSPICE breakout 486DX
    Text: WinSLAC Software User’s Guide 1999 The contents of this document are provided in connection with Advanced Micro Devices, Inc. “AMD” products. AMD makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make


    Original     		PDF

    TDA 9599 h

    Abstract: TDA 9599 5101D3 tda 9567 TDA16822 siemens logo application examples STR F 9208 L simulation flyback converter TDA 9567 equivalent tda 4605 application note
    Text: Version 1.0 , June 2001 Application Note AN-PSM-11 Switched and Averaged PSPICE Models Authors: Horst Edel Daniel Lindenmeyer Published by Infineon Technologies AG www.infineon.com/simulate www.infineon.com/coolset Support: simulate@infineon.com Power Management & Supply


    Original     		AN-PSM-11 9101-20-P1-1----- Room14J1 Room1101 TDA 9599 h TDA 9599 5101D3 tda 9567 TDA16822 siemens logo application examples STR F 9208 L simulation flyback converter TDA 9567 equivalent tda 4605 application note PDF

    SX3002

    Abstract: NE555L ac DC supplies MEAN WELL schematic DIP28 DIP40 schematic diagram atom resistor hv pspice model list transistor block diagram the project automatic room power sx2005
    Text: AsicAtoms User Manual January 28, 2005 Copyright 2005 Sigenics Inc. Page 1 Table of Contents Introduction . 3 “Installing” AsicAtoms . 4


    Original     		N22356 N26631 SX3002 N20995 N32935 N28726 N29728 SX3002 NE555L ac DC supplies MEAN WELL schematic DIP28 DIP40 schematic diagram atom resistor hv pspice model list transistor block diagram the project automatic room power sx2005 PDF

    f10p03l

    Abstract: 10P03L 10p03 Logic Level p-Channel Power MOSFET TA49205 RFD10P03L RFD10P03LSM RFD10P03LSM9A RFP10P03L n097
    Text: RFD10P03L, RFD10P03LSM, RFP10P03L Data Sheet January 2002 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET Features These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,


    Original     		RFD10P03L, RFD10P03LSM, RFP10P03L TA49205. f10p03l 10P03L 10p03 Logic Level p-Channel Power MOSFET TA49205 RFD10P03L RFD10P03LSM RFD10P03LSM9A RFP10P03L n097 PDF

    03n06

    Abstract: MOSFET 60V 210A 03N06C RLD03N06CLE RLD03N06CLESM RLD03N06CLESM9A RLP03N06CLE TB334 65E6
    Text: RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE Data Sheet January 2002 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs Features • 0.30A, 60V These are intelligent monolithic power circuits which incorporate a lateral bipolar transistor, resistors, zener


    Original     		RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE 03n06 MOSFET 60V 210A 03N06C RLD03N06CLE RLD03N06CLESM RLD03N06CLESM9A RLP03N06CLE TB334 65E6 PDF

    RFG75N05E

    Abstract: AN7254 AN7260 AN9321 AN9322 52E3 RS249
    Text: RFG75N05E Data Sheet January 2002 75A, 50V, 0.008 Ohm, N-Channel Power MOSFET These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		RFG75N05E RFG75N05E AN7254 AN7260 AN9321 AN9322 52E3 RS249 PDF

    RS249

    Abstract: No abstract text available
    Text: RFG75N05E Data Sheet Title FG7 05E bt A, V, 08 m, an- 75A, 50V, 0.008 Ohm, N-Channel Power MOSFET Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		RFG75N05E 175oC RS249 PDF

    Logic Level p-Channel Power MOSFET

    Abstract: 08E4 pspice ESD
    Text: RFD8P06LE, RFD8P06LESM, RFP8P06LE Data Sheet Title FD8 6LE D8 6LE M, P8P LE bt A, V, 00 m, D ted, gic vel, an- July 1999 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET Features These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process,


    Original     		RFD8P06LE, RFD8P06LESM, RFP8P06LE TA49203. Logic Level p-Channel Power MOSFET 08E4 pspice ESD PDF

    RFD8P06LESM9A

    Abstract: f8p6le Logic Level p-Channel Power MOSFET RFD8P06LE RFD8P06LESM RFP8P06LE KP115 bv164 45e4
    Text: RFD8P06LE, RFD8P06LESM, RFP8P06LE Data Sheet January 2002 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET Features • 8A, 60V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,


    Original     		RFD8P06LE, RFD8P06LESM, RFP8P06LE TA49203. 175oC RFD8P06LESM9A f8p6le Logic Level p-Channel Power MOSFET RFD8P06LE RFD8P06LESM RFP8P06LE KP115 bv164 45e4 PDF

    f10p03l

    Abstract: TC227 25e-2 RFD10P03L RFD10P03LSM RFD10P03LSM9A RFP10P03L
    Text: RFD10P03L, RFD10P03LSM, RFP10P03L Data Sheet July 1999 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET Title FD1 03L, D10 3LS eyrds ter- 3515.2 Features • 10A, 30V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process,


    Original     		RFD10P03L, RFD10P03LSM, RFP10P03L TA49205. f10p03l TC227 25e-2 RFD10P03L RFD10P03LSM RFD10P03LSM9A RFP10P03L PDF