Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TA49082 Search Results

    TA49082 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FD3055

    Abstract: Fp3055 IS433 4078 relay RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A
    Text: RFD3055, RFD3055SM, RFP3055 Data Sheet July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs • 12A, 60V Formerly developmental type TA49082. • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve


    Original
    PDF RFD3055, RFD3055SM, RFP3055 TA49082. 175oC TB334 FD3055 Fp3055 IS433 4078 relay RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A

    FD3055

    Abstract: fp3055 TA49082 IS433 RFD3055
    Text: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original
    PDF RFD3055, RFD3055SM, RFP3055 TA49082. TB334 RFD3055SM RFD3055SM9A136 RFD3055SM9A O-252 FD3055 fp3055 TA49082 IS433 RFD3055

    FD3055

    Abstract: Fp3055
    Text: RFD3055, RFD3055SM, RFP3055 Data Sheet Title FD3 5, D30 SM, P30 bt A, V, 50 m, anwer OSTs utho eyrds terrpoon, July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original
    PDF RFD3055, RFD3055SM, RFP3055 FD3055 Fp3055

    FD3055

    Abstract: IS433 FD3055 HARRIS TA49082 mosfet motor dc 48v AN7254 AN7260 RFD3055 RFD3055SM RFP3055
    Text: RFD3055, RFD3055SM RFP3055 S E M I C O N D U C T O R 12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs MegaFETs February 1994 Features Packaging • 12A, 60V JEDEC TO-220AB TOP VIEW DRAIN (FLANGE) • rDS(ON) = 0.150Ω • Temperature Compensating PSPICE Model


    Original
    PDF RFD3055, RFD3055SM RFP3055 O-220AB 175oC O-251AA RFD3055SM RFP3055 1-800-4-HARRIS FD3055 IS433 FD3055 HARRIS TA49082 mosfet motor dc 48v AN7254 AN7260 RFD3055

    FD3055

    Abstract: IS433 Fp3055 RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A
    Text: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original
    PDF RFD3055, RFD3055SM, RFP3055 TA49082. FD3055 IS433 Fp3055 RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A

    fd3055

    Abstract: No abstract text available
    Text: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original
    PDF RFD3055, RFD3055SM, RFP3055 TA49082. fd3055

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original
    PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    FD3055

    Abstract: Fp3055
    Text: interrii RFD3055, RFD3055SM, RFP3055 D a ta S h e e t 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power J u ly 1 9 9 9 F ile N u m b e r 3648.2 Features •


    OCR Scan
    PDF RFD3055, RFD3055SM, RFP3055 TA49082. AN7260. FD3055 Fp3055

    IS433

    Abstract: FD3055 RFP3055
    Text: RFD3055, RFD3055SM RFP3055 C S JHARRIS U J S E M I C O N D U C T O R 12A, 60V, Avalanche Rated, N-Channel Enhancem ent-M ode Power M OSFETs MegaFETs February 1994 Packaging Features JEDEC TO-220AB ’ VIEW • 12 A ,6 0 V • r DS{ON)= 0 .1 5 0 Q z_ uT o


    OCR Scan
    PDF RFD3055, RFD3055SM RFP3055 O-220AB O-251AA RFP3055 238e-9 1e-30 IS433 FD3055

    Untitled

    Abstract: No abstract text available
    Text: RFD3055, RFD3055SM, RFP3055 Semiconductor Data Sheet July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs File Number 3648.2 Features • 12A, 60V These are N-Channel enhancem ent mode silicon gate • rDS ON = 0.150i2 power field effect transistors. They are advanced power


    OCR Scan
    PDF RFD3055, RFD3055SM, RFP3055 150i2