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    PT 10 LH 10K Search Results

    PT 10 LH 10K Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    MC10198FNR2 Rochester Electronics LLC MC10198 - Monostable Multivibrator, 10K Series, 1-Func, ECL, PQCC20 Visit Rochester Electronics LLC Buy
    MC10105P Rochester Electronics LLC MC10105 - OR/NOR Gate, 10K Series, 3-Func, 3-Input, ECL, PDIP16 Visit Rochester Electronics LLC Buy
    MC10131P Rochester Electronics LLC MC10131 - D Flip-Flop, 10K Series, 2-Func, Positive Edge Triggered, 1-Bit, Complementary Output, ECL, PDIP16 Visit Rochester Electronics LLC Buy
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    PT 10 LH 10K Price and Stock

    Amphenol Corporation PT10LH01-103A2020-S

    Trimmer Resistors - Through Hole 10Kohms 10mm Rnd Side adj Steel lead
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PT10LH01-103A2020-S 4,336
    • 1 $0.6
    • 10 $0.414
    • 100 $0.361
    • 1000 $0.302
    • 10000 $0.264
    		Buy Now

    Amphenol Corporation PT10LH01-103A2020

    Trimmer Resistors - Through Hole 10Kohms 10mm Rnd Side adj
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PT10LH01-103A2020 2,115
    • 1 $0.84
    • 10 $0.676
    • 100 $0.543
    • 1000 $0.456
    • 10000 $0.342
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    Amphenol Corporation PT15LH06103A2020

    Trimmer Resistors - Through Hole 10Kohms 15mm Rnd
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PT15LH06103A2020 1,829
    • 1 $1.19
    • 10 $0.956
    • 100 $0.768
    • 1000 $0.644
    • 10000 $0.471
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    Amphenol Corporation PT10LH01-103B2020

    Trimmer Resistors - Through Hole 10Kohms 10mm Rnd Side adj
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PT10LH01-103B2020 1,616
    • 1 $1.13
    • 10 $0.906
    • 100 $0.728
    • 1000 $0.656
    • 10000 $0.515
    		Buy Now

    Amphenol Corporation PT10LH02-103A2020

    Trimmer Resistors - Through Hole 10K OHMS 10MM RND
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PT10LH02-103A2020 1,142
    • 1 $0.97
    • 10 $0.779
    • 100 $0.626
    • 1000 $0.5
    • 10000 $0.394
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    Find more PT 10 LH 10K price and stock on Findchips.com

    PT 10 LH 10K Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AN525

    Abstract: BC327-25 SMD AN500-x smd diode S4 6E Zener Diode 1b8 PGKE AUSTRIA MIKRO SYSTEME INTERNATIONAL handsfree chip Application Notes AN500-x AS2525
    Text: Preliminary Application Note AN525  Austria Mikro Systeme International AG Application Note AN525: AS2525,AS2591 Single Chip Handsfree Phone +16 digit LCD driver demo board 1. Scope This application note describes operation and features of the AS2525 Single Chip handsfree telephone and


    Original     		AN525 AN525: AS2525 AS2591 AS2591 AN525 AS252x /AN525 BC327-25 SMD AN500-x smd diode S4 6E Zener Diode 1b8 PGKE AUSTRIA MIKRO SYSTEME INTERNATIONAL handsfree chip Application Notes AN500-x PDF

    piher spain

    Abstract: pt 10 lh 10K 10k spdt potentiometer PTC153 piher spain potentiometer PTC-10V thumbwheel Potentiometers PT-10 PTC-15 low torque potentiometer
    Text: PTC-10 10 mm Cermet Potentiometer FEATURES – – – – – MECHANICAL SPECIFICATIONS Cermet resistive element. Dust proof enclosure. Plastic material according to UL94V-0 Alumina substrate. Also upon request: Wiper positioned at 50% or fully clockwise.


    Original     		PTC-10 UL94V-0 PT-10, PT-15, PTC-15 PT/PTC-15 PT/PTC-10 piher spain pt 10 lh 10K 10k spdt potentiometer PTC153 piher spain potentiometer PTC-10V thumbwheel Potentiometers PT-10 PTC-15 low torque potentiometer PDF

    PTC 10k

    Abstract: pt 10 lh 10K
    Text: PT-10 10 mm Carbon Potentiometer FEATURES – – – – MECHANICAL SPECIFICATIONS Carbon resistive element Dust proof enclosure Polyester substrate Also upon request: Wiper positioned at 50% or fully clockwise. Supplied in magazines for automatic insertion.


    Original     		PT-10 PTC-15 PT/PTC-10 PT/PTC-15 PTC 10k pt 10 lh 10K PDF

    Untitled

    Abstract: No abstract text available
    Text: ES M A « FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 4A ,250V ,rDS ON = 0.610n The Discrete Products Operation of Harris Semiconductor has developed a series o1 Radiation Hardened MOSFETs


    OCR Scan     		FSL234D, FSL234R MIL-STD-750, MIL-S-19500, 500ms; PDF

    10496RL

    Abstract: OWTC
    Text: Integrated Device Technology, Inc. PRELIMINARY IDT10496RL IDT100496RL IDT101496RL SELF-TIMED BiCMOS ECL STATIC RAM 64K 16K x 4-BIT STRAM FEATURES: • 16,384-wonds x 4-bit organization • Self-Timed, with registers on inputs and latches on outputs • Balanced Read/Write cycle time: 10/12/15 ns


    OCR Scan     		IDT10496RL IDT100496RL IDT101496RL 384-wonds IDT10496RL, IDT101496RL 536-bit ECL-10K ECL-100K 10496RL OWTC PDF

    LM101

    Abstract: m101a LM201N A2201 LM101N LM201 equivalent M301AN lm201at LH2101AF LM 101
    Text: L M 101 /A/201 /A /301 /A , LH2101 A/2201 A/2301 A -F,N ,N -14,T DESCRIPTION T h e LM101, LM201, LM 101A, LM 201A, and LM 301A are h ig h p e rfo rm a n ce o p e ra tio n a l a m p lifie rs fe a tu rin g hig h ga in , s h o rt c irc u it p ro te c tio n , s im p lifie d c o m pensa tion and


    OCR Scan     		/A/201 LH2101 LM101, LM201, LH2101A, LH2201A, LM101 m101a LM201N A2201 LM101N LM201 equivalent M301AN lm201at LH2101AF LM 101 PDF

    Untitled

    Abstract: No abstract text available
    Text: FSJ9055D, FSJ9055R HARRIS SEMICONDUCTOR 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 55A, -60V, Tqs ON ~ 0.029S2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		FSJ9055D, FSJ9055R MIL-STD-750, MIL-S-19500, 100ms; 500ms; PDF

    GAL20V8

    Abstract: gal20v8 application
    Text: rZ Z S C S -T H O M S O N * 7 # RjflD^iIUiOT OîOD®i GAL20V 8 E2CMOS PROGRAMMABLE LOGIC DEVICE • ELECTRICALLY ERASABLE CELL TECHNOLOGY — Reconfigurable Logic — Reprogrammable Cells — Guaranteed 100% Yields ■ HIGH PERFORMANCE E*CMOS TECHNOLOGY


    OCR Scan     		GAL20V 90f70mA 45/35mA 24-pin LC9000 GAL20V8 gal20v8 application PDF

    Untitled

    Abstract: No abstract text available
    Text: FSJ260D, FSJ260R 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 44A, 200V, rDS 0N = 0.050Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for comm ercial and m ilitary space


    OCR Scan     		FSJ260D, FSJ260R 36MeV/mg/cm2 MIL-STD-750, MIL-S-19500, 100ms; 500ms; PDF

    Untitled

    Abstract: No abstract text available
    Text: SS FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 2A ,500V,rDS ON = 2.50£i The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    OCR Scan     		FSL430D, FSL430R MIL-STD-750, MIL-S-19500, 500ms; PDF

    Untitled

    Abstract: No abstract text available
    Text: S HARfiSS FSF450D, FSF450R 9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June1998 Features r D S O N —0.600ft • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects


    OCR Scan     		FSF450D, FSF450R e1998 600ft MIL-STD-750, MIL-S-19500, 100ms; 500ms; PDF

    diode PJ 65 MG

    Abstract: 5a 12v regula
    Text: 33 FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 5A, 200V, rDS 0N = 0.460i2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    OCR Scan     		460i2 FSL230D, FSL230R MIL-STD-750, MIL-S-19500, 500ms; diode PJ 65 MG 5a 12v regula PDF

    Untitled

    Abstract: No abstract text available
    Text: FSJ160D, FSJ160R 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 70A, 100V, rDS ON = 0.022£i The Discrete Products Operation ot Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    OCR Scan     		FSJ160D, FSJ160R 36MeV/mg/cm2 MIL-STD-750, MIL-S-19500, 100ms; 500ms; PDF

    Untitled

    Abstract: No abstract text available
    Text: W A R D 'S FSS430D, FSS430R 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 3A, 500V, Fd S ON = 2.70S1 The Discrete Products O peration of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		FSS430D, FSS430R MIL-STD-750, MIL-S-19500, 100ms; 500ms; PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED BiCMOS ECL STATIC RAM 1M 256Kx 4-BIT SRAM PRELIMINARY IDT10514 IDT100514 IDT101514 FEATURES: DESCRIPTION: • • • • • • • The IDT10 5 1 4 ,1DT100514 and IDT101514 are 1,048,576bit high-speed BiCEMOS ECL static random access memo­


    OCR Scan     		256Kx 144-words IDT10514 IDT100514 IDT101514 IDT10 1DT100514 IDT101514 576bit 256Kx4, PDF

    Untitled

    Abstract: No abstract text available
    Text: FSS9130D, FSS9130R FR HARRIS S E M I C O N D U C T O R 6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 6A, -100V, rQg oN = 0«660il The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		FSS9130D, FSS9130R -100V, MIL-STD-750, MIL-S-19500, 100ms; 500ms; PDF

    5a 12v regula

    Abstract: No abstract text available
    Text: FSL9130D, FSL9130R HARRIS S E M I C O N D U C T O R 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features • Description 5A, -100V, roS ON = 0,68012 • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event


    OCR Scan     		FSL9130D, FSL9130R -100V, MIL-S-19500, MIL-STD-750, 100ms; 500ms; 5a 12v regula PDF

    250JIS

    Abstract: No abstract text available
    Text: GBü à ttm FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 18A, 250V, rDS 0N = 0.170Q The Discrete Products Operation of Harris Semiconductor has developed a series ot Radiation Hardened MOSFETs


    OCR Scan     		FSF254D, FSF254R 36MeV/mg/cm2 MIL-STD-750, MIL-S-19500, 100ms; 500ms; 250JIS PDF

    Untitled

    Abstract: No abstract text available
    Text: O FSS234D, FSS234R W ^ R R is 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space appli­


    OCR Scan     		FSS234D, FSS234R MIL-STD-750, MIL-S-19500, 100ms; 500ms; PDF

    T218N

    Abstract: aeg tt 18 n 1200 T218 AEG T 51 N 1200
    Text: 0 0 2 9 4 2 6 A E G CORP ' fil DE | □ □ S ti4 E t. D 0 0 b l4 E □ | T218N Typenreihe/Type ränge_T218N Elektrische Eigenschaften 400 * 600 800 1000 1100 1200 1400 1600 Electrical properties Höchstzulässige Werte U d r m i U r r m Periodische Vorwärts-und


    OCR Scan     		D00bl4E T218N T218N aeg tt 18 n 1200 T218 AEG T 51 N 1200 PDF

    ifr 150 mosfet

    Abstract: No abstract text available
    Text: ¡ f i H R R U U S E M I C O N D U C T O R FSL913AOD, FSL913AOR I S 7 A , -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features • 7A, -100V, Description = 0.300U • Total Dose - Meets Pre-RAD Specifications to 100K RAD Si


    OCR Scan     		FSL913AOD, FSL913AOR -100V, 36MeV/mg/cm2 MIL-STD-750, MIL-S-19500, 500ms; ifr 150 mosfet PDF

    SL13A

    Abstract: No abstract text available
    Text: FSL 13A O D , H A R R IS S E M I C O N D U C T O R F SL 13A O R 9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 9 A , 1 0 0 V , Tq s O N = 0.1 s o n The Discrete Products Operation of Harris Semiconductor


    OCR Scan     		MIL-STD-750, MIL-S-19500, 500ms; SL13A PDF

    Untitled

    Abstract: No abstract text available
    Text: 3 3 W A R F ? FSL130D, FSL130R 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 8A, 100V, r DS ON = 0.230Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		FSL130D, FSL130R MIL-STD-750, MIL-S-19500, 500ms; PDF

    Untitled

    Abstract: No abstract text available
    Text: FSL9110D, FSL9110R CD W ^ is 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 2 .5 A ,-1 0 0 V ,rD S o N = 1-30£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		FSL9110D, FSL9110R -100V, MIL-STD-750, MIL-S-19500, 500ms; PDF