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    PT 4207 Search Results

    PT 4207 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    142-07L Coilcraft Inc General Purpose Inductor, 0.307uH, Air-Core, 3838 Visit Coilcraft Inc
    142-07J08L Coilcraft Inc Variable Inductor, 0.33uH Min, 0.427uH Max, Carbonyl-Core, Unshielded, 3838, ROHS COMPLIANT Visit Coilcraft Inc
    142-07J08SL Coilcraft Inc Variable Inductor, 0.259uH Min, 0.29uH Max, Carbonyl-Core, Shielded, 4141, ROHS COMPLIANT Visit Coilcraft Inc
    142-07A08L Coilcraft Inc NOT RoHS. RF inductor, tunable, aluminum core, shielded (add 'L' for compliant version) Visit Coilcraft Inc Buy
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    PT 4207 Price and Stock

    Hirschmann Electronics GmbH & Co Kg MSP42-00200EPT999HHE2AXX.X.XX

    Unmanaged Ethernet Switches MSP42-00200EPT999HHE2AXX.X.XX
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    Samtec Inc FW-26-05-G-D-342-075-ES-P-TR

    Board to Board & Mezzanine Connectors Flexible Micro Board Stacking Header, 0.050" Pitch
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    Samtec Inc AW-17-03-G-D-142-075-ES-P-TR

    Board to Board & Mezzanine Connectors 0.80 mm Flex Stack, Surface Mount Micro Board Stacker
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    Samtec Inc AW-30-03-G-D-142-075-ES-P-TR

    Board to Board & Mezzanine Connectors 0.80 mm Flex Stack, Surface Mount Micro Board Stacker
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    Samtec Inc AW-40-03-G-D-142-075-ES-P-TR

    Board to Board & Mezzanine Connectors 0.80 mm Flex Stack, Surface Mount Micro Board Stacker
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    Mouser Electronics AW-40-03-G-D-142-075-ES-P-TR
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    PT 4207 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AT42070

    Abstract: AT-42070 S21E
    Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0 GHz 10.0 dB Typical G1 dB at 4.0 GHz


    Original     		PDF AT-42070 AT-42070 AT42070 RN/50 5965-8912E 5966-4945E S21E

    Untitled

    Abstract: No abstract text available
    Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0␣ GHz 10.0 dB Typical G1 dB at 4.0␣ GHz


    Original     		PDF AT-42070 5965-8912E 5966-4945E

    AT42070

    Abstract: transistor C200 AT-42070 S21E
    Text: AT-42070 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-42070 is a general purpose NPN bipolar transistor that offers excellent high ­frequency performance. The AT‑42070 is housed in a hermetic, high reliability goldceramic 70 mil microstrip package. The 4 micron emitterto-emitter pitch enables this transistor to be used in many


    Original     		PDF AT-42070 AT-42070 AT42070 5989-2654EN AV02-1218EN transistor C200 S21E

    common emitter amplifier

    Abstract: zo 107 P 55 NFO transistor w 04 59 UHF transistor GHz AT-42070 S21E AT42070
    Text: AT-42070 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-42070 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42070 is housed in a hermetic, high reliability


    Original     		PDF AT-42070 AT-42070 5966-4845E 5989-2654EN common emitter amplifier zo 107 P 55 NFO transistor w 04 59 UHF transistor GHz S21E AT42070

    AT-42070

    Abstract: S21E AT42070
    Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0␣ GHz 10.0 dB Typical G1 dB at 4.0␣ GHz


    Original     		PDF AT-42070 AT-42070 RN/50 S21E AT42070

    AT-42070

    Abstract: No abstract text available
    Text: Agilent AT-42070 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz Description Agilent’s AT-42070 is a general purpose NPN bipolar transistor that


    Original     		PDF AT-42070 5966-4945E 5989-2654EN

    NAS-938

    Abstract: 180-018a NAS bolts torque chart dynamometer AP1001 410403 torque sensor rotary transformer 8311-17-10A hall sensor 6pin
    Text: - Torque Sensors Torque sensors manufactured by PCB fall into two categories of measurement: reaction torque and rotational torque. Both styles utilize strain gages, which are configured into a Wheatstone bridge circuit, as their primary sensing element. Accuracies are typically


    Original     		PDF TA-1002 TA-1003 NAS-938 180-018a NAS bolts torque chart dynamometer AP1001 410403 torque sensor rotary transformer 8311-17-10A hall sensor 6pin

    diode in58

    Abstract: OMRON POWER RELAY MP2 DMT 98 ATEX G 001 honeywell dcs manual Yokogawa Transducer ABB inverter motor fault code pdt 908
    Text: Interface Technology and Switching Devices 2013 / 2014 7 PCB connection technology and electronics housing • PCB terminal blocks and plug-in connectors • Electronics housing Connection technology for field devices • Plug-in connectors • Cables and connectors


    Original     		PDF unitB-FLK50/0 VIP-CAB-FLK50/0 VIP-CAB-FLK50/FR/OE/0 diode in58 OMRON POWER RELAY MP2 DMT 98 ATEX G 001 honeywell dcs manual Yokogawa Transducer ABB inverter motor fault code pdt 908

    psd4xx

    Abstract: PSDsoft object file tutorial major project report of eprom programmer PSD503B1 16MHZ AD0-AD15 psd5xx
    Text: Programmable Peripheral Application Note 031 PSD4XX/5XX Design Tutorial Introduction This tutorial takes you step by step through the development cycle of a PSD4XX/5XX based design, from design entry to programming the device. A simple design example is used to demonstrate how some of the key functions in the PSD4XX/5XX are utilized.


    Original     		PDF

    WG12864A

    Abstract: 7028 SMD Transistor wh1604 WH1602B 94V0 200108 TRANSISTOR SMD MARKING CODE NM cree 3535 WH1602L WG24064A Kingbright 55-0197
    Text: Optoelectronics New products SMD LEDs White 3528 Series High Power SMD LEDs White 3535 37E Series From £0.05 See page 604 Page 599 From £0.64 12V LED Strips, 4.8W per metre 12V LED Strips, 4.8W per metre Warm white See page 610 Cool white See page 610 From


    Original     		PDF L-934 1511A35W3 1511A35W3D 1511A35UY3 1511A35UG3 1000mcd 500mcd 200mcd 1500mcd 5mA/10mA WG12864A 7028 SMD Transistor wh1604 WH1602B 94V0 200108 TRANSISTOR SMD MARKING CODE NM cree 3535 WH1602L WG24064A Kingbright 55-0197

    T4148

    Abstract: TIC 160 D sm 4109 TIC 160 M T-41410 TIC+160+M
    Text: What H EW LETT 1 "KM PA CK A R D Silicon Bipolar Transistors Selection Guide NF0 and Ga are specified at a low noise bias point, while Pt dB, Gj dB, and IS2lEl- are specified at bias points which optimize these parameters. Low N oise Transistors Typical Specifications @ 25°C Case Temperature


    OCR Scan     		PDF AT-31011 T-31033 T-41410 T-41435 T-41485 AT-41511 T4148 TIC 160 D sm 4109 TIC 160 M TIC+160+M

    TA8510

    Abstract: Ta-8510 SAO1 photo thyristor E67349 TLP611J TA225 tlp611
    Text: TT TOSHIBA {DI SC RE TE /O PT O} DE ^ T0T7BS0 QD174ÛD 1 | 99D 17480 9097250 TOSHIBA <DISCRETE/OPTO D T-W-Z 7 T L P 6 I I J GaAs IR ED & P H O TO -TH Y R IS TO R The TOSHIBA TLP611J consists of a photo­ thyristor connected inverse parallel optically coupled to a gallium arsenide infrared emitt­


    OCR Scan     		PDF TLP611J 200mA 5000Vrms E67349 Ta225Â HL-10Qn Ta-8510 RaK-27VQ TA8510 SAO1 photo thyristor E67349 TA225 tlp611

    SN55150

    Abstract: No abstract text available
    Text: TEXAS INSTR Ì L I N / I N T F O f i ^ 17E4 q 07S431 fl | - 8961 724 TEXAS INSTR CLIN/INTFC 91D 75431 SN55150, SN75150 DUAL LINE DRIVERS D9 51 , J A N U A R Y 1 9 7 1 - R E V IS E D SE PT E M B ER 1 9 86 . S N 5515 0 . . . JG PACKAGE S N 7615 0 . . . D. JG. OR P PACKAGE


    OCR Scan     		PDF 07S431 SN55150, SN75150 RS-232-C 2500-pF sN76T50_ 1N752A MIL-STD-188C MIL-STD-188C, SN55150

    AT42070

    Abstract: oscillator 77 GHZ Avantek amplifier Avantek power amplifier AT-42070 T-31-21 AVANTEK oscillator
    Text: AVANTEK INC SGE D • im n b b DGDbMTa S AT-42070 Up to 6 GHz Medium Power Silicon Bipolar Transistor * Features Avantek 70 mil Package • .uqu • • • • High Output Power: 21.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical PidB at 4.0 GHz High Gain at 1 dB Compression:


    OCR Scan     		PDF AT-42070 AT42070 oscillator 77 GHZ Avantek amplifier Avantek power amplifier T-31-21 AVANTEK oscillator

    Untitled

    Abstract: No abstract text available
    Text: NICROPAC INDUS T R I E S INC 3D d!T| bll,3L4D DDDDatM T f T-58-11-13 725 E. Walnut Street Garland, Texas 75040 214 272-3571 TWX 910-860-5186 797// MICROPAC INDUSTRIES, INC. P R E LIM IN A R Y MIVR 42078 1.5A FIXED THREE TERMINAL POSITIVE REGULATORS Screened to Mil. Std. 883B


    OCR Scan     		PDF T-58-11-13 24VDC

    Untitled

    Abstract: No abstract text available
    Text: NICROPAC INDUSTRIES INC 3D DeT| fc. 1 1 5 b 4 D □□□Ü2b4 T mu f~ T-58-11-13 725 E. W alnut Street G arland, Texas 75040 214 272-3571 TWX 910-860-5186 MICROPAC INDUSTRIES, INC. P R E LIM IN A R Y MIVR 42078 1.5A FIXED THREE TERMINAL POSITIVE REGULATORS


    OCR Scan     		PDF T-58-11-13

    Untitled

    Abstract: No abstract text available
    Text: MICROPAC IND US TRIE S INC 30 DË bUSt^D □□□Q2bb 2 mu T -58-11-13 725 E, Walnut Street Garland, Texas 75040 214)272-3571 TWX 910-860-5186 MICROPAC INDUSTRIES, INC. PRELIMINARY M IV R 42079 1.5A FIXED THREE TER M IN A L NEG ATIVE REGULATORS Screened to Mil. Std. 883B.


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: AT-42070 Up to 6 GHz Medium Power Silicon Bipolar Transistor Who IHEWLETT ft "HM PACKARD 70 mil Package Features • • • • • ,040 1.02 High Output Power: 21.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pi dB at 4.0 GHz High Gain at 1 dB Compression:


    OCR Scan     		PDF AT-42070

    Untitled

    Abstract: No abstract text available
    Text: W hat HEWLETT« mLMÆ PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical Pj dB at 2.0 GHz 20.5 dBm Typical Pi ¿b at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical Gi ^ at 2.0 GHz


    OCR Scan     		PDF AT-42070 AT-42070 Rft/50 0D17bb3 DG17bb4

    Untitled

    Abstract: No abstract text available
    Text: AVANTEK Q a v aüE D INC a n t e • i i m i h t 0001=4^2 s AT-42070 Up to 6 GHz Medium Power Silicon Bipolar Transistor * k ' Features Avantek 70 mi! Package • High Output Power: 21.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pi dB at 4.0 GHz • High Gain at 1 dB Compression:


    OCR Scan     		PDF AT-42070 T-31-21

    Untitled

    Abstract: No abstract text available
    Text: What 1"UM HEW LETT PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Tfechnical Data AT-42070 Features different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium


    OCR Scan     		PDF AT-42070 AT-42070 5965-8912E 59664945E

    PT 4207

    Abstract: No abstract text available
    Text: AmPAL*HC29M16/AmPALHCT29M16 24-Pin E2-Based CMOS Programmable Array Logic ADVANCE INFORMATION • • • • High-performance semi-custom logic replacement; Electrically Erasable E2 technology allows repro­ grammability 16 bidirectional user-programmable I/O logic macro­


    OCR Scan     		PDF HC29M16/AmPALHCT29M16 24-Pin BD006821 BD006831 HC29M16/A ALHCT29M16 KS000010 PT 4207

    4207 photo diode

    Abstract: D 4206 TRANSISTOR PT 4207
    Text: m H A R R IS S E M I C O N D U C T O R FRM9250D, FRM9250R, FRM9250H 16A, -200V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 16A, -200V, RDS on = 0.300» TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		PDF FRM9250D, FRM9250R, FRM9250H -200V, O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD 4207 photo diode D 4206 TRANSISTOR PT 4207

    SP-0770

    Abstract: PT 4207 MCP-0101-5-12 EJ34 HNCP10 DSP-0770
    Text: HEXADECIMAL AND NUMERIC DISPLAYS FOR INDUSTRIAL APPLICATIONS HIGH EFFICIENCY RED LOW Power High Brightness YELLOW GREEN HDSP-0760/0761/0762/0763 HDSP-0770/0771/0772/077J HDSP-0860/0861 /0862/0863 HDSP-0960/0961 /0962/0963 Features • TH R E E CO LO R S H igh-Efficiency Red


    OCR Scan     		PDF HDSP-0760/0761/0762/0763 HDSP-0770/0771/0772/077J HDSP-0860/0861 HDSP-0960/0961 SP-0770 PT 4207 MCP-0101-5-12 EJ34 HNCP10 DSP-0770