Untitled
Abstract: No abstract text available
Text: DIODE 200A Avg 800 Volts •回路図 CIRCUIT PT200S8 ■外形寸法図 OUTLINE DRAWING (単位 Dimension:mm) + ~ ∼ ∼ φ − ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧 *1 Repetitive Peak Reverse Voltage
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PT200S8
TcTt103
PT200S8
150VRM
25IFM
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Untitled
Abstract: No abstract text available
Text: DIODE 200A Avg 800 Volts •回路図 CIRCUIT PT200S8 ■外形寸法図 OUTLINE DRAWING (単位 Dimension:mm) + ~ ∼ ∼ − ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧 *1 Repetitive Peak Reverse Voltage
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PT200S8
TcTt103
PT200S8
150VRM
25IFM
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E187184
Abstract: No abstract text available
Text: DIODE MODULE PT200S8 200A/800V OUTLINE DRAWING FEATURES * Isolated Base * 3 Phase Bridge Circuit * Designed Power Circuit Board * High Surge Capability * UL Recognized, File No. E187184 ナット φ TYPICAL APPLICATIONS * Rectified For General Use Maximum Ratings
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E187184
00A/800V
PT200S8
PT200S8
10msec
PT200Sxx
E187184
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PT200S8
Abstract: No abstract text available
Text: DIODE 200A Avg 800 Volts •回路図 CIRCUIT PT200S8 ■外形寸法図 OUTLINE DRAWING (単位 Dimension:mm) + ~ ∼ ∼ φ − ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧 *1 Repetitive Peak Reverse Voltage
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Original
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PT200S8
TcTt103
150VRM
25IFM
PT200S8
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PDF
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PT200S8
Abstract: No abstract text available
Text: DIODE MODULE 200A/800V PT200S8 OUTLINE DRAWING FEATURES * Isolated Base * 3 Phase Bridge Circuit * Designed Power Circuit Board * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * Rectified For General Use Maximum Ratings Parameter
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00A/800V
PT200S8
E187184
10msec
PT200Sxx
PT200S8
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PDF
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PT76S16
Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Text: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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508RP
Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Text: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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PDM5001
Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
Text: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH
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C3557
PH1503
PH150
PDM5001
PDT400N16
pah60n8cm
PHMB50E6CL
PHT250N16
PHT400N16
PD100KN16
PAH100N8CM
PT76S16
PAT400N16
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FCGS20A12
Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Text: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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