H440

Abstract: PTB23001X PTB23003X PTB23003XA PTB23005X OC292
Contextual Info: P T B 23001X PTB23003X PT B 2 3 0 0 5 X PTB 23003XA PHILIPS INTERNATIONAL 5L.E T> m 7 11 0 fl2ti GCmfc.42fc, fl Tb M P H I N MICROWAVE POWER TRANSISTORS NPN silicon transistors fo r use in common-base class-B power amplifiers up to 4.2 GHz. Diffused em itter ballasting resistors, interdigitated structure, m ulticell geometry, localized th ick oxide