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    Text: PTF181301E PTF181301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 1805 – 1880 MHz, 1930 – 1990 MHz Description The PTF181301E and PTF181301F are thermally-enhanced, 130-watt, internally matched GOLDMOS FETs intended for GSM and EDGE applications in the DCS/PCS bands. Thermally-enhanced packaging provides


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    PTF181301E PTF181301F 130-watt, PTF181301F* PDF