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    PTFA212002E Search Results

    PTFA212002E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTFA212002E Infineon Technologies 2100 MHz to 2200 MHz; Package: PG:30275; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 2,110.0 - 2,170.0 MHz; P1dB (typ): 200.0 W; Supply Voltage: 28.0 V; Original PDF

    PTFA212002E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AT27280

    Abstract: variable capacitor ceramic 25pF AT 0340 TEMEX LM7805 05 LM7805 smd 8 pin SMD CAPACITOR L27 smd transistor marking l6 LM7805 PTFA212002E SMD TRANSISTOR MARKING 904
    Text: PTFA212002E Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110 – 2170 MHz Description The PTFA212002E is a 200-watt, internally-matched, laterally doublediffused, GOLDMOS push-pull FET. It is characaterized for singleand two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and


    Original     		PDF PTFA212002E PTFA212002E 200-watt, AT27280 variable capacitor ceramic 25pF AT 0340 TEMEX LM7805 05 LM7805 smd 8 pin SMD CAPACITOR L27 smd transistor marking l6 LM7805 SMD TRANSISTOR MARKING 904

    ERA-H-30275-4-1-2304

    Abstract: No abstract text available
    Text: Preliminary PTFA212002E Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110 – 2170 MHz Description Features The PTFA212002E is a 200-watt, internally-matched, laterally doublediffused, GOLDMOS push-pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold Metallization ensures excellent device lifetime


    Original     		PDF PTFA212002E PTFA212002E 200-watt, 10substances. ERA-H-30275-4-1-2304