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    PTFC262808SV Price and Stock

    Infineon Technologies AG PTFC262808SVV1R250X

    LDMOS FET, High Power RF, 280W, 28V, 2.62-2.69GHz, H-37275G-6/2 FL Pkg, T/R 250 - Tape and Reel (Alt: PTFC262808SVV1R250)
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    Avnet Americas PTFC262808SVV1R250X Reel 250
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    PTFC262808SV Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTFC262808SVV1R250XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF

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    PTFC262808SV

    Abstract: No abstract text available
    Text: PTFC262808SV Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz Description The PTFC262808SV is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package. Manufactured with


    Original     		PDF PTFC262808SV PTFC262808SV 280-watt

    PTFB090901EA

    Abstract: No abstract text available
    Text: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB


    Original     		PDF PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA