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PTVA123501EC Price and Stock

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MACOM PTVA123501EC-V2-R0 RF MOSFET LDMOS 50V H-36248-2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PTVA123501EC-V2-R0	Digi-Reel	32		1	1 $405.61 10 $339.61 100 $405.61 1000 $405.61 10000 $405.61	Buy Now
	PTVA123501EC-V2-R0	Cut Tape	32		1	1 $405.61 10 $339.61 100 $405.61 1000 $405.61 10000 $405.61	Buy Now
	PTVA123501EC-V2-R0	Reel			50	1 - 10 - 100 $308.67 1000 $308.67 10000 $308.67	Buy Now
Mouser Electronics	PTVA123501EC-V2-R0					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Richardson RFPD	PTVA123501EC-V2-R0				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG PTVA123501ECV2XWSA1 RF MOSFET LDMOS H-36248-2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PTVA123501ECV2XWSA1	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
MACOM PTVA123501EC-V2-R250 RF MOSFET LDMOS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PTVA123501EC-V2-R250	Reel			250	1 - 10 - 100 - 1000 $286.48996 10000 $286.48996	Buy Now
Mouser Electronics	PTVA123501EC-V2-R250					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Richardson RFPD	PTVA123501EC-V2-R250				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG PTVA123501ECP2 RF Components (Alt: SP001046596)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
EBV Elektronik	PTVA123501ECP2			26 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now

PTVA123501EC Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
PTVA123501EC-V2-R0		Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-36248-2		Original	PDF
PTVA123501ECV2R0XTMA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-36248-2		Original	PDF
PTVA123501EC-V2-R250		Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS		Original	PDF
PTVA123501ECV2R250XTMA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS		Original	PDF
PTVA123501ECV2XWSA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS		Original	PDF

PTVA123501EC Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
42756 regulator Abstract: 42756 C207 capacitor j146 1300 transistor Text: PTVA123501EC Thermally-Enhanced High Power RF LDMOS FET 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC LDMOS FET is designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with	Original	PDF	PTVA123501EC PTVA123501EC H-36248-2 42756 regulator 42756 C207 capacitor j146 1300 transistor
Untitled Abstract: No abstract text available Text: PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced	Original	PDF	PTVA123501EC PTVA123501FC PTVA123501EC PTVA123501FC H-36248-2 H-37248-2
Untitled Abstract: No abstract text available Text: PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced	Original	PDF	PTVA123501EC PTVA123501FC PTVA123501EC PTVA123501FC H-36248-2 H-37248-2
42756 regulator Abstract: No abstract text available Text: PTVA123501EC Thermally-Enhanced High Power RF LDMOS FET 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC LDMOS FET is designed for use in power ampliier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with	Original	PDF	PTVA123501EC PTVA123501EC H-36248-2 42756 regulator
Untitled Abstract: No abstract text available Text: PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced	Original	PDF	PTVA123501EC PTVA123501FC PTVA123501EC PTVA123501FC H-36248-2 H-37248-2
PTVA123501EC Abstract: rfpower fet Text: Preliminary PTVA123501EC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC LDMOS FET is designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band.	Original	PDF	PTVA123501EC PTVA123501EC H-36248-2 rfpower fet
PTFB090901EA Abstract: No abstract text available Text: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB	Original	PDF	PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA
BGU7073 Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188 Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by	Original	PDF