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    PTVA123501FC Search Results

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    PTVA123501FC Price and Stock

    MACOM PTVA123501FC-V1-R0

    RF MOSFET LDMOS 50V H-37248-4
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    DigiKey PTVA123501FC-V1-R0 Cut Tape 41 1
    • 1 $405.61
    • 10 $339.61
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    PTVA123501FC-V1-R0 Digi-Reel 41 1
    • 1 $405.61
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    PTVA123501FC-V1-R0 Reel 50
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    Mouser Electronics PTVA123501FC-V1-R0
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    Richardson RFPD PTVA123501FC-V1-R0 1
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    Infineon Technologies AG PTVA123501FCV1XWSA1

    RF MOSFET LDMOS H-37248-2
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    DigiKey PTVA123501FCV1XWSA1 Tray
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    MACOM PTVA123501FC-V1-R250

    RF MOSFET LDMOS
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    DigiKey PTVA123501FC-V1-R250 Reel 250
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    Mouser Electronics PTVA123501FC-V1-R250
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    Richardson RFPD PTVA123501FC-V1-R250 1
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    Infineon Technologies AG PTVA123501FCP2

    RF Components (Alt: SP001109238)
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    EBV Elektronik PTVA123501FCP2 26 Weeks 50
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    PTVA123501FC Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTVA123501FC-V1-R0 Wolfspeed IC AMP RF LDMOS H-37248-2 Original PDF
    PTVA123501FC-V1-R250 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF
    PTVA123501FCV1R250XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF
    PTVA123501FCV1XWSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF

    PTVA123501FC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced


    Original     		PDF PTVA123501EC PTVA123501FC PTVA123501EC PTVA123501FC H-36248-2 H-37248-2

    Untitled

    Abstract: No abstract text available
    Text: PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced


    Original     		PDF PTVA123501EC PTVA123501FC PTVA123501EC PTVA123501FC H-36248-2 H-37248-2

    Untitled

    Abstract: No abstract text available
    Text: PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced


    Original     		PDF PTVA123501EC PTVA123501FC PTVA123501EC PTVA123501FC H-36248-2 H-37248-2

    PTFB090901EA

    Abstract: No abstract text available
    Text: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB


    Original     		PDF PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF