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Catalog Datasheet	MFG & Type	Document Tags	PDF
silicon power gmbh Abstract: NE5520379A NE5520379A-T1 NE5520379A-T1A VP215 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
Untitled Abstract: No abstract text available Text: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 3.2 V GSM 900 handsets. Dies are manufactured using our NEWMOS technology and housed in a	Original	NE5520379A NE5520379A IR260 VP215 WS260 HS350-P3 PU10122EJ03V0DS	PDF
NE5520379A Abstract: NE5520379A-T1 NE5520379A-T1A VP215 ldmos nec Text: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier	Original	NE5520379A NE5520379A NE5520379A-T1 NE5520379A-T1A VP215 ldmos nec	PDF
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF