PU3110

Abstract: PU3210 PUA3110 PUA3210
Contextual Info: Power Transistor Arrays PUA3110 PU3110 Silicon NPN triple diffusion planar type For power amplification/switching Complementary to PUA3210 (PU3210) Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: Power Transistor Arrays PUA3110 PU3110 Silicon NPN triple diffusion planar type For power amplification/switching Complementary to PUA3210 (PU3210) Unit: mm 8.0±0.2 4.0±0.2 • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat)

PU3110

Abstract: PU3210 PUA3110 PUA3210
Contextual Info: Power Transistor Arrays PUA3210 PU3210 Silicon PNP epitaxial planar type For power amplification Complementary to PUA3110 (PU3110) Unit: mm 20.2±0.3 Solder Dip 5.3±0.5 4.4±0.5 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

PU3110

Abstract: PU3210 PUA3110 PUA3210
Contextual Info: Power Transistor Arrays PUA3110 PU3110 Silicon NPN triple diffusion planar type For power amplification/switching Complementary to PUA3210 (PU3210) Unit: mm • Absolute Maximum Ratings TC = 25°C Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)

Contextual Info: Power Transistor Arrays PUA3110 PU3110 Silicon NPN triple diffusion planar type For power amplification/switching Complementary to PUA3210 (PU3210) Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: Power Transistor Arrays PUA3210 PU3210 Silicon PNP epitaxial planar type For power amplification Complementary to PUA3110 (PU3110) Unit: mm 20.2±0.3 Solder Dip 5.3±0.5 4.4±0.5 M Di ain sc te on na tin nc ue e/ d 9.5±0.2 1.65±0.2 • Low collector-emitter saturation voltage VCE(sat)

PU3110

Abstract: PU3210 PUA3110 PUA3210
Contextual Info: Power Transistor Arrays PUA3210 PU3210 Silicon PNP epitaxial planar type For power amplification Complementary to PUA3110 (PU3110) Unit: mm 20.2±0.3 9.5±0.2 1.65±0.2 • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE

Contextual Info: Power Transistor Arrays PUA3210 PU3210 Silicon PNP epitaxial planar type For power amplification Complementary to PUA3110 (PU3110) Unit: mm 20.2±0.3 • Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −60 V Collector-emitter voltage (Base open)

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and