Q0242B0 Search Results

64336

Abstract: DDSM517 LE28BU166 3DQ10 643333 g0545
Text: Ordering number:ENN‘6433 CMOS 1C L E 28B U 166 IsA H m i 16.064-Megabit FlashBank Memory Preliminary FEATURES: Read Access Time • Single 2.5-Volt Read and W rite Operations - 90 and 120 ns • Separate Memory Banks for Code or Data ’ Latched Address and Data