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    irf530

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS IRF530/531 FEATURES • Lower R ds On • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		IRF530/531 IRF530 IRF531 Q02fl755 irf530 PDF