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    Q62702A1270 Search Results

    Q62702A1270 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Q62702-A1270 Siemens Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) Original PDF

    Q62702A1270 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original
    PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    A1270

    Abstract: transistor A1270 A1270 transistor datasheet 81W MARKING CODE a1270* transistor Q62702-A1270 marking 81W
    Text: BAR 81W Silicon RF Switching Diode Preliminary data 3 • Design for use in shunt configuration 4 • High shunt signal isolation • Low shunt insertion loss 2 1 VPS05605 Type Marking Ordering Code Pin Configuration BAR 81W BBs 1 = A1 2 = C2 3 = A2 4 = C1 SOT-343


    Original
    PDF VPS05605 OT-343 Q62702-A1270 100MHz Sep-04-1998 A1270 transistor A1270 A1270 transistor datasheet 81W MARKING CODE a1270* transistor Q62702-A1270 marking 81W

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BAR 81W Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss EHA0702D Type Marking Ordering Code Pin Configuration BAR 81W BBs 1 = A1 2 = C2 3 = A2 4 = C1 SOT-343


    OCR Scan
    PDF EHA0702D OT-343 Q62702-A1270 012Q257 flE35bD5 100MHz BE35hDS

    81W MARKING CODE

    Abstract: Q62702A1270 marking code 7G
    Text: SIEMENS BAR 81W Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss IN - — - W » EHA07023 BAR 81W BBs 1 = A1 2 = C2 Q62702-A1270 Package eg Pin Configuration


    OCR Scan
    PDF Q62702-A1270 EHA07023 OT-343 100MHz 81W MARKING CODE Q62702A1270 marking code 7G