BFY181
Abstract: No abstract text available
Text: BFY181 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.2 dB at 2 GHz
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BFY181
Q62702F1607
QS9000
BFY181
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Untitled
Abstract: No abstract text available
Text: BFY181 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor 4 3 1 2 For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.2 dB at 2 GHz
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BFY181
BFY181
Q62702F1607
Q62702in
QS9000
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marking A04
Abstract: BFY181 p 181 V Q62702F1715
Text: HiRel NPN Silicon RF Transistor BFY 181 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.2 dB at 2 GHz
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Original
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PDF
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Q62702F1607
Q62702F1715
BFY181
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
marking A04
p 181 V
Q62702F1715
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A21E
Abstract: No abstract text available
Text: SIEMENS HiRel NPN Silicon RF Transistor BFY181 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • Hermetically sealed microwave package • /- r = 8 GHz, F = 2.2 dB at 2 GHz
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OCR Scan
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PDF
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BFY181
Q62702F1607
Q62702F1715
BFY181
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
A21E
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