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    BFY196

    Abstract: No abstract text available
    Text: BFY196 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 6,5 GHz F = 3 dB at 2 GHz • Space Qualification Expected 1998


    Original     		PDF BFY196 Q62702F1684 QS9000 BFY196

    A03 transistor

    Abstract: microwave transducer BFY196 BFY 36 transistor
    Text: HiRel NPN Silicon RF Transistor BFY 196 Features ¥ ¥ ¥ ¥ ¥ ¥ HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz. For linear broadband amplifiers Hermetically sealed microwave package fT = 6.5 GHz, F = 3 dB at 2 GHz


    Original     		PDF Q62702F1684 BFY196 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 A03 transistor microwave transducer BFY 36 transistor

    Untitled

    Abstract: No abstract text available
    Text: BFY196 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • • fT= 6,5 GHz F = 3 dB at 2 GHz 4


    Original     		PDF BFY196 BFY196 Q62702F1684 QS9000