QED121

Abstract: QED123 Fairchild 902 QED122
Contextual Info: QED121, QED122, QED123 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ = 880nm The QED121, QED122 and QED123 are 880nm AlGaAs LEDs encapsulated in a clear peach tinted, plastic T-1 3/4 package. ■ Chip material = AlGaAs

Contextual Info: QED121, QED122, QED123 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ = 880nm The QED121, QED122 and QED123 are 880nm AlGaAs LEDs encapsulated in a clear peach tinted, plastic T-1 3/4 package. ■ Chip material = AlGaAs

qed12x

Contextual Info: QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 4.95 FEATURES • D= 880 nm REFERENCE SURFACE • Chip material = AlGaAs 0.305 (7.75) • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Narrow Emission Angle, 18°

D880

Contextual Info: QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 4.95 FEATURES • D= 880 nm REFERENCE SURFACE • Chip material = AlGaAs 0.305 (7.75) • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Narrow Emission Angle, 18°

qed12x

Abstract: QED121 QED122 QED123 QSD122
Contextual Info: QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 4.95 FEATURES • D= 880 nm REFERENCE SURFACE • Chip material = AlGaAs 0.305 (7.75) • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Narrow Emission Angle, 18°

24CT

Contextual Info: Fa OPTOELECTRONICS AIGaAs INFRARED EMITTING DIODE QEC121/122 PACKAGE DIMENSIONS DESCRIPTION The Q E C 12X is an 88 0 nm AIG aA s LED en capsulated in a clear, purple tinted, plastic T-1 package. FEATURES • Tight production Eedistribution. ■ Steel lead fram es for im proved reliability in solder

Contextual Info: AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QED121/122/123 DESCRIPTION PACKAGE DIMENSIONS T h e Q ED 12X is an 880 AIGaAs LED encapsulated in a clear, peach tinted, plastic T-1% package. FEATURES • Tight production E- distribution. ■ Steel lead fram es for im proved reliability in solder

Contextual Info: OPTOELECTRONICS PLASTIC INFRARED LIGHT EMITTING DIODES T-1 3 mm Part Number 76 NOM jr~r le Angle @ 1/2 Power Radiant Intensity min max units V F/IF (V)l(mA) max I r/V r (ViA)/(V) max Notes 940 nm GaAs \ .052(1 32) .032 (.082) Emission JT | QEC112 ±8° 6

QRB1134

Abstract: H22A2 QRB1113 QRB1114 QRD1114 LED55C QSE113 QSC112 QSE157 QSE158
Contextual Info: Index Part Number 1N6264 1N6265 BPW36 BPW37 BPW38 CNY28 CNY29 CNY36 CQX14 CQX15 CQX16 CQX17 F5D1 F5D2 F5D3 F5E1 F5E2 F5E3 H21A1 H21A2 H21A3 H21A4 H21A5 H21A6 H21B1 H21B2 H21B3 H21B4 H21B5 H21B6 H21LOB H21LOI H21LTB H21LTI H22A1 H22A2 H22A3 H22A4 H22A5 H22A6

Contextual Info: ÆÜI AIGaAs INFRARED EMITTING DIODE OPTDELECTROHICS QED121/122/123 DESCRIPTION PACKAGE DIMENSIONS T h e Q E D 1 2 X is an 8 8 0 A IG a A s L E D e n c a p s u la te d in a c le a r, p e a c h tin ted , plas tic T-13/4 p a c k a g e . FEATURES • T ig h t p ro d u c tio n Ee d istrib u tio n .

Contextual Info: [ * o OPTOELECTRONICS PLASTIC INFRARED LIGHT EMITTING DIODES t E m issio n T-1 3 mm A n q ie • 2 Power i - 1 T W}/ n i i i ? im AI/IV Tim in « ì x u rliti rn a * m ax 940 nm GaAs Í 76'i NOM .062 1.1.32 .032 (-052) !r /VP; ¿di.-iní “ T 800 (20.3)

L14F1 phototransistor datasheet

Abstract: L14F1 PHOTOTRANSISTOR phototransistor 3 pin L14F1 Phototransistor L14F1 l14f1 ir phototransistor T1 L14F1 Phototransistor L14G3 L14F1 PHOTOTRANSISTOR PIN opto transistor moc 12v LED 55 with L14F1 phototransistor
Contextual Info: Optoelectronics Light Emitting Diodes Light Emitting Diodes LED , Plastic Package Ie (mW/sr) CIF = 100 mA Max IR (µA) @ VR = 5V Emission Angle in Degrees (°) @ 1/2 Intensity Wavelength (nm) λp Min Max Max VF (V) @ IF = 100 mA QEC112 6 30 1.7 10 24 940

QED234

Abstract: ir diode 940 nm sidelooker DIODE power diode package QEC121 QED233 QEC112 QEC113 QEC122 QEC123
Contextual Info: Optoelectronics Plastic Light Emitting Diodes Ie @ 100 mA IF mW/sr IR @ 5 V VR (µA) max Emission Angle in Degrees (°) @ 1/2 Power Wavelength (nm) λp min max VF @ 100 mA IF (V) max QEC112 6 30 1.7 10 24 940 QEC113 14 – 1.7 10 24 940 QEC121 14 – 1.9

TIP 122 100 V

Abstract: TIP 122 transistor QED121 QED122 QED123 qsd122
Contextual Info: QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 4.95 FEATURES • != 880 nm REFERENCE SURFACE • Chip material = AlGaAs 0.305 (7.75) • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Narrow Emission Angle, 18°

QED122

Abstract: QEC121 QEC122 QED121 QED123 diode 465 nm 5 mm tinted radiant energy
Contextual Info: r*T | m m É éiìwiììbA ^ S ü J H i OPTOELECTRONICS AIGaAs INFRARED EMITTING DIODE QEC121/122 PACKAGE DIMENSIONS DESCRIPTION The QEC12X is an 880 nm AIGaAs LED encapsulated in a clear, purple tinted, plastic T-1 package. FEATURES • Tight production Eedistribution.

MAN6760 function

Abstract: KAR00042 KAR00044 KOI00003 KAT00022A kva00272 KAT00049 Fairchild kar00042 KAR00044A KDT00026
Contextual Info: Date Created: 2/12/2004 Date Issued: 2/19/2004 PCN # 20040702 INFORMATION ONLY NOTIFICATION This is to inform you that a minor change is being made to the following product s . This notification is for your information only. Updated process quality documentation, such as FMEAs and Control Plans, are available

L14F1 phototransistor datasheet

Abstract: l14f1 ir phototransistor PIN CONFIGURATION OF L14F1 L14F1 PHOTOTRANSISTOR Phototransistor L14F1 MEXICO TRANSMISSIVE SENSOR l14f1 phototransistor data opto transistor moc CQX 89 Phototransistor L14G3
Contextual Info: Infrared Products Selection Guide Analog Discrete Interface & Logic Optoelectronics July 2002 • • • • • • Electrical and Optical Specifications Absolute Maximum Ratings Package Specifications Ordering Information Glossary of Terms Frequently Asked Questions

Contextual Info: _ 1 AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QED121/122/123 PACKAGE DIMENSIONS DESCRIPTION The Q E D 12X is an 880 AIGaAs LED encapsulated in a clear, peach tinted, plastic T-1% package. FEATURES • Tight production Ee distribution. ■ Steel lead fram es for im proved reliability in solder

QED223

Abstract: diode Sr 203
Contextual Info: Plastic Light Emitting Diodes T-1 3 mm Diode Package 0.116 (2.95) REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) Part Number Ie @ 100 mA IF (mW/sr) min max VF @ 100 mA IF (V) max IR @ 5 V VR (µA)

Contextual Info: GEO OPTOELECTRONICS PLASTIC INFRARED LIGHT EM ITTIN G DIODES E m is sio n T-1 3 mm A n g le @ Part Num ber •e R a d ia n t In te n s ity 1/2 P o w e r V F/ I F ■r ' V r V /(m A | ( mA )/ i v i m in max u n its m ax max 30 mW/sr 1.50/20 10/5 1 — mW/sr

MAN-8610

Abstract: CNW82 HLMPD150A CNY17GF-1
Contextual Info: ËQ OPTOELECTRONICS P art N u m be r 1N6264 1N6265 1N6266 PART NUM BER INDEX P art N u m be r Page 95 _ 95 95 Page P art N u m be r Page P art N u m b e r Page P art N u m b e r Page CNW135 CNW135.300 15 CNY17GF-3.300 12 12 75 75 13 CNY17GF 4 GMC7975C GMC7975CA

ORB1134

Abstract: H11F1 300 CNY17GF-2 cnw85 CQX17 L14LOB 740L6000 OPB704 MAN4710 1LP6
Contextual Info: so OPTOELECTRONICS PART NUMBER INDEX P a rt Numbe* Part N u m b e r Part Num ber Part N um ber 1N6264 35 CNW138 17 CQX14 35 GMC2988C 145 H11C2.300 1N6265 35 CNW138.300 17 CQX15 35 GMC7175C 133 H11C3 22 1N6266 35 CNW139 17 CQX16 35 GMC7175CA 133 H11C3.300 22