G016
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES ; QM300DY-2HB ! HIGH POWER SWITCHING USE INSULATED TYPE QM 300DY-2HB { •1C Collector current. 300A • V cex Collector-emitter voltage.1000V • hFE DC current gain. 750 • Insulated Type
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QM300DY-2HB
300DY-2HB
E80276
E80271
G016
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM300DY-24B HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-24B lc Collector current. 300A Vcex Collector-emitter vo ltag e 1200V hFE DC current gain.750 Insulated Type UL Recognized
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QM300DY-24B
E80276
E80271
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM300DY-24 HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-24 lc Collector current. 300A Vcex Collector-emitter vo ltag e 1200V hFE DC current gain. 75 Insulated Type UL Recognized
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QM300DY-24
E80276
E80271
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E80276
Abstract: QM300DY-24B
Text: MITSUBISHI TRANSISTOR MODULES QM300DY-24B HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-24B • • • • • IC Collector current . 300A VCEX Collector-emitter voltage . 1200V hFE DC current gain. 750
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QM300DY-24B
E80276
E80271
E80276
QM300DY-24B
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Diode B2x
Abstract: diode 6A 1000v E80276 QM300DY-2H Welder
Text: MITSUBISHI TRANSISTOR MODULES QM300DY-2H HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-2H • • • • • IC Collector current . 300A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75
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QM300DY-2H
E80276
E80271
Diode B2x
diode 6A 1000v
E80276
QM300DY-2H
Welder
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES i QM300DY-24 j j j HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-24 • Ic • V cex • hFE Collector current. 300A
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QM300DY-24
QM300DY-24
E80276
E80271
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qm300dy-24
Abstract: E80276
Text: MITSUBISHI TRANSISTOR MODULES QM300DY-24 HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-24 • • • • • IC Collector current . 300A VCEX Collector-emitter voltage . 1200V hFE DC current gain. 75
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QM300DY-24
E80276
E80271
qm300dy-24
E80276
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BA rx transistor
Abstract: F 10 L 600 QM300d QM300DY-H
Text: ] QM300DY-HB j MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE [ I QM300DY-HB • Ic • VCEX • hFE Collector current.300A ; Collector-emitter voltage. 600V DC current gain . 750 ;
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QM300DY-HB
QM300DY-HB
E80276
E80271
BA rx transistor
F 10 L 600
QM300d
QM300DY-H
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1200 va ups circuit diagram
Abstract: No abstract text available
Text: j MITSUBISHI TRANSISTOR MODULES QM300DY-2H ! Í HIGH POWER SWITCHING USE f INSULATED TYPE ! QM300DY-2H • Ic • V cex • hFE C o lle cto r c u rre n t. C o lle c to r-e m itte r v o lta g e . DC c u rre n t g a in .
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QM300DY-2H
E80271
1200 va ups circuit diagram
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM300DY-2H HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-2H lc Collector current. 300A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized
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QM300DY-2H
E80276
E80271
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM300DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE Q M 300DY-2HB • lc Collector current. 300A • Vcex Collector-emitter vo ltag e 1000V • hFE DC current gain. 750 • Insulated Type
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QM300DY-2HB
300DY-2HB
E80276
E80271
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E80276
Abstract: QM300DY-2HB
Text: MITSUBISHI TRANSISTOR MODULES QM300DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-2HB • • • • • IC Collector current . 300A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 750
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QM300DY-2HB
E80276
E80271
E80276
QM300DY-2HB
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diode sy 710
Abstract: sy 710 diode
Text: MITSUBISHI TRAN SISTOR M OD U LES \ QM300DY-24B ¡ HIGH POWER SWITCHING U SE INSULATED TYPE QM300DY-24B • lc • Vcex • hFE Collector current. 300A Collector-emitter voltage 1200V DC current gain . 750
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QM300DY-24B
E80276
E80271
diode sy 710
sy 710 diode
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M52777SP
Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Text: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30
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2SA1115
2SA1235
2SA1235A
2SA1282
2SA1282A
2SA1283
2SA1284
2SA1285
2SA1285A
2SA1286
M52777SP
M54630P
M38881M2
m59320
57704L
M38173M6
SF15DXZ
M34236
m37204m8
54630p
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qm300dy-h
Abstract: qm50dy-h QM150DY-H QM1Q 150DY qm200dy-hk 150DY-HBK QM15 QM30d QM30c
Text: Transistor modules Double arm ,center tap V cêx h *8 I j-r Type No. Pe Transistor section Ve *¥ e (sus) (V) (A) (A) (Wl p (A) 600 30 1.8 250 150 30 QMSOCY-H 600 50 3 310 150 QM75CY-H 600 75 4.5 350 150 QMtOOCY-H 600 100 6 620 150 100 QM150CY-H 600 150
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QM75CY-H
QM150CY-H
QM30CY-H
qm300dy-h
qm50dy-h
QM150DY-H
QM1Q
150DY
qm200dy-hk
150DY-HBK
QM15
QM30d
QM30c
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