OP169SL
Abstract: OP509SLC OP509SLD
Text: OPTEK TEC HNOLOGY INC ObE D | L ^ û S â O 0000154 7 Optoelectronics- D ivision TRW E le c tro n ic C o m p o n e n ts G r o u p Product Bulletin 5 1 1 4 TRYw | Ja n u a ry 19 8 5 N P N Silicon Phototransistors Types QP509, OP5Q9SLD, 0P509SLC Features Ab solu te M a xim u m Ra tings
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0P509SLC
060II
0P169SL
0P269SL
QP509,
OP509SLD,
OP509SLC
CKT2-Rf-10K
OP169SL
OP509SLD
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11C1 diode p
Abstract: mml 600 OP169SL OP509 OP509SLC OP509SLD
Text: OPTEK TECHNOLOGY INC ObE D | hTTSSaO 00□D154 7 | O p to e le ctro n ics' D iv is io n T R W Electronic C o m p o n e n ts G ro u p 7 7 W V Product Bulletin 5 1 1 4 January 1985 NPN Silicon Phototransistors Types QP509, 0P5Q9SLD, QP509SLC F e a tu re s A b s o lu te M a xim u m R a tin g s IT a - 2 5 °C unless otherwise noted
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000D154
QP509SLC
OP169SL
0P269SL
OPE09,
OP509SLD,
OP509SLC
11C1 diode p
mml 600
OP509
OP509SLD
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OP169
Abstract: OP269 OP509 OP509A OP509B OP509C
Text: @ .O PIEK Product Bulletin O P509 June 1996 NPN Silicon Phototransistors Types OP5Q9A, QP509B, OP5Q9C Features A bsolute M axim um Ratings T a = 2 5 ° C unless otherw ise noted) • Lensed for high sensitivity • Easily stackable on 0.100 inch (2.54 mm) hole centers
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OP509
OP509A,
OP509B,
OP509C
OP169
OP269
OP509A
OP509B
OP509C
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Untitled
Abstract: No abstract text available
Text: @.OPIEK Product B ulletin O P509 June 1996 NPN Silicon Phototransistors Types OP509A, QP509B, QP509C Features A bsolute M axim um Ratings T a = 2 5 ° C unless otherw ise noted • Lensed for high sensitivity • Easily stackable on 0.100 inch (2.54 mm) hole centers
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OP509A,
QP509B,
QP509C
OP169
OP269
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OP169
Abstract: OP269 OP509 OP509A OP509B OP509C
Text: OPTEK Product Bulletin OP509 June 1996 NPN Silicon Phototransistors Types OP5Q9A, QP509B, OP5Q9C Absolute Maximum Ratings Ta = 25° C unless otherwise noted • Lensed for high sensitivity • Easily stackable on 0.100 inch (2.54 mm) hole centers • Low cost plastic package
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PDF
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OP509
QP509A,
QP509B,
OP169
OP269
OP509A
OP509B
OP509C
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Untitled
Abstract: No abstract text available
Text: OPTEK Product Bulletin OP509 June 1996 NPN Silicon Phototransistors Types OP509A, OP509B, QP509C Features Absolute Maximum Ratings T a = 25° C u n le ss otherw ise noted • Lensed for high sensitivity • Easily stackable on 0.100 inch (2.54 mm) hole centers
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PDF
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OP509
OP509A,
OP509B,
QP509C
OP169
OP269
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TI-131
Abstract: No abstract text available
Text: OPTEK TECHNOLOGY INC ObE D | L ^ Ö S ä O 0000154 7 | Op to electron ics- D iv is io n • J i g T R W Electronic Components Group Product Bulletin 5 114 January 1985 _ m - IMPIU Silicon Phototransistors Types OP509, OP509SLD, OP509SLC .030 0.79 NOW RA0ÍUS U K
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OP509,
OP509SLD,
OP509SLC
DP189SL
0P269SL
TI-131
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DP509
Abstract: diameter lens phototransistor OP169 OP169A OP169B OP169C
Text: 0 . OPTEK Product Bulletin OP169 June 1996 GaAs Plastic Infrared Emitting Diodes Types OP169A, OP169B, OP169C Features Absolute Maximum Ratings T a = 25° C unless otherw ise noted • Integral lens for narrow beam angle • Easily stackable on 0.100 inch (2.54
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OP169
OP169A,
OP169B,
OP169C
DP509
QP509
0QQ257D
diameter lens phototransistor
OP169A
OP169B
OP169C
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OP269
Abstract: OP269A OP269B OP269C OP509
Text: OPTEK Product Bulletin OP269 June 1996 GaAIAs Plastic Infrared Emitting Diodes Types OP269A, OP269B, OP269C Features Absolute Maximum Ratings T a = 25° C unless otherw ise noted • Integral lens for narrow beam angle • Easily stackable on 0.100 inch (2.54
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OP269
OP269A,
OP269B,
OP269C
300pps)
sol100
OP269A
OP269B
OP269C
OP509
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OP169
Abstract: OP169A OP169B OP169C OP509
Text: OPTEK Product Bulletin OP169 June 1996 GaAs Plastic Infrared Emitting Diodes Types OP169A, OP169B, OP169C Absolute Maximum Ratings Ta = 25° C unless otherwise noted • Integral lens for narrow beam angle • Easily stackable on 0.100 inch (2.54 mm) hole centers
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PDF
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OP169
OP169A,
OP169B,
OP169C
OP509
OP169A
OP169B
OP169C
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