S54 DIODE
Abstract: No abstract text available
Text: ÖUALITY SEMIC OND UCTOR INC bSE D B 74bt>6Q3 QQ01SH5 3 7 e! QSFCT374T, 534T, 2374T, 2534T Q S54/74FCT374T Q S54/74FCT534T High-Speed CMOS Bus Interface 8-Bit Registers Q QS54/74FCT2374T Q S54/74FCT2534T FEATURES/BENEFITS • • • • Pin and function compatible to the 74F374/534
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QQ01SH5
QSFCT374T,
2374T,
2534T
S54/74FCT374T
S54/74FCT534T
QS54/74FCT2374T
S54/74FCT2534T
74F374/534
74FCT374/534and
S54 DIODE
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Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO LTD SSE D • QQ0101B 3SQ « S A K J - “1 Silicon NPN Tripla Diffuseci Planar ☆High Voltage Switching Transistor 2SC4546 Application Example : e Outline Drawing 4 . . F M 2 0 Switching Regulator,Lighting Inverter,
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QQ0101B
2SC4546
10Omax
10min
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din 41332
Abstract: No abstract text available
Text: ROEDERSTEIN ELECTRONICS 23E D 7fl21bHM QQ0114D 7 Roederstein Low-Voltage Electrolytic Capacitors with Radial Leads in Aluminium Case, Insulated, Polarized pulse-proof Miniature electrolytic capacitors for vertical mounting in printed circuits, with good temperature behaviour, high
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7fl21bHM
QQ0114D
din 41332
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mqsi
Abstract: V334X V336X V334 V330X V331X V322 V324 V326 V328
Text: MICROSEMI CORP/ MICRO 5bE » • bllSTQ? QQ013B7 SÔ3 ■ d 3L MICRO QUALITY / -p o 3 -l3 S E M IC O N D U C TO R . INC 3 Amp Diffused Silicon Epoxy Rectifiers with 100 Amp Peak Surge Rating Controlled Avalanche Types with 250V, 450V, 650V, and 850V Minimum Avalanche Ratings
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D0013B7
mqsi
V334X
V336X
V334
V330X
V331X
V322
V324
V326
V328
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d-255a
Abstract: No abstract text available
Text: PURDY UM J / A N » »IV 3ÖE » • 7M327ST QQ01ÖSS ö B A N » AND255 ■ Series T13A Package, Dual Chip C o lo r A x ial Lum in o u s In te n s ity (m c d ) Test C o n d itio n (Ip-m A ) V ie w in g A n g le 26V2 (d e g ) P a rt N u m b e r Led Lens
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7M327ST
AND255
AND255AS,
255AG,
255AY,
255AO
AND255A
AND256
T-41-21
AND255A
d-255a
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b0808
Abstract: INSTRUCTION SET 8085 with opcode timing diagram of call instruction in 8085 microprocessor INSTRUCTION SET 8085 8085A hex code 8085 opcode 8085 Serial I/O lines SOD and SID 8085 microprocessor opcode 8085 hex codes Calmos 8085
Text: SÖE D b566 10 1 QQ011b3 415 «NB M C CA80C85B cm HIGH PERFORMANCE 8-BIT CMOS MICROPROCESSOR NFIilRPTT\^r MICROSYSTEMS T-HVV7- 07 Enhanced, high performance CA80C85B micro processor features pin and functional compati bility with industry standard 8085 and 8085A
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CA80C85B
CA80C85B
8085/8085A
40HEX
b0808
INSTRUCTION SET 8085 with opcode
timing diagram of call instruction in 8085 microprocessor
INSTRUCTION SET 8085
8085A hex code
8085 opcode
8085 Serial I/O lines SOD and SID
8085 microprocessor opcode
8085 hex codes
Calmos 8085
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GD4534B
Abstract: 6 digit counter
Text: GOLDSTAR TECHNOLOGY INCn OME D | 4QSÖ7S7 QQ01ÛQ1 T -V S -2 3 '2 5 4028757 GOLDSTAR T E CH NO LO GY INC. _ 04E 01801 D GD4534B REAL TIM E 5-DECADE COUNTER D E S C R IPT IO N — The 4534B is a Real Tim e 5-Decade Counter. Consisting o f five B C D Ripple
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GD4534B
4534B
GD4534B
6 digit counter
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1S34
Abstract: AT28HC16-45 AT28HC16-45DC
Text: MBE D ATHEL CORP m 1 0 7 4 1 7 7 QQ01S3S 3 E l ATM AT28HC16/L T -i/é-13-Z 7 Features • • • Fast Read Access Time - 45ns Fast Byte Write - 1ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write
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28HC16L)
AT28HC16/16L
AT28HC16LN-90DI
AT28HC16L-900I
AT28HC16L
N-90PI
AT28HC16L-90PI
AT28HC16LN-90DM
AT28HC16L-90DM
AT28HC16LN-90DM/883
1S34
AT28HC16-45
AT28HC16-45DC
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H7q7
Abstract: H707
Text: niCROSEMI CORP/ MICRO 5bE D • bllS'lD? QQ0147S SbE ■MflL / MICRO QUALITY / SEMICONDUCTOR, INC Fast Recovery High Voltage Rectifier H7Q7 For X-Ray Apparatus and Industrial Equipment Platinum Doped Epoxy Encapsulated Avalanche Quality LTR. A B C D INCHES
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Q0Q14A0
T-03-O
H7q7
H707
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3sm5
Abstract: No abstract text available
Text: MOSAI C S E M I C O N D U C T O R INC blE D molate ^35337^ QQ017T1 1 ST « M O C _ 512K X B SRAM MS8312SC-025/35/45 Issue 1.0 : April 1993 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc. 524,288 x 8 CMOS High Speed Static RAM Features Very Fast Access Times of 025/35/45 ns.
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QQ017T1
MS8312SC-025/35/45
MIL-STD-883,
3sm5
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Gunn Diode
Abstract: MA46450 MA46470 gunn diodes MA46451 MA46452 MA46454 MA46455 MA46480 0QQ12
Text: M/A-CON SEMICOND-.BRLNGTON 11 D • 5bM22m QQ01S2b 3 M M I C ^ _ c><7„ /? yflMCDM MA46450 through MA46480 Series — 1.00 and 1.25 Gamma GaAs Hyperabrupt Tuning Varactors Features ■ CONSTANT GAMMA = 1.0 OR 1.25 ■ HIGH Q UP TO 4000 AT - 4 VOLTS ■ LARGE CAPACITANCE CHANGE WITH
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5b42214
Q0ai22Li
MA46450
MA46480
MA46470
MA46450-MA46470
Gunn Diode
gunn diodes
MA46451
MA46452
MA46454
MA46455
0QQ12
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HY531000 Series 1Mx 1-bit CMOS DRAM DESCRIPTION The HY531000 is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY531000
300mil
1AB04-30-APR93
HY531000S
HY531000J
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Untitled
Abstract: No abstract text available
Text: IBM0117400 IBM0117400M IBM0117400B IBM0117400P 4M x 4 11/11 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 2048 Refresh Cycles - 32 ms Refresh Rate (SP version)
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IBM0117400
IBM0117400M
IBM0117400B
IBM0117400P
300jiA
Add43G9649.
350ns
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Untitled
Abstract: No abstract text available
Text: _ EDI7F8512C ^ED I Electronic Designs Inc. High Performance Four Megabit Flash EEPROM 512Kx8 CMOS Flash EEPROM Module Features The EDI7F8512C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 512Kx8 bits, the module contains four 128Kx8 Flash Memo
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EDI7F8512C
512Kx8
EDI7F8512C
128Kx8
3E30114
EDI7F8512C120BSC
EDI7F8512C150BSC
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FG600AH
Abstract: FG1800AH FG600AV FG1000AL FG1000A fg2000av FG1000AH
Text: 7294621 POWEREX INC \ ' T - ZsST- D e 75^4^.51 00D1A53 4 /? Gate Turn-Off (GTO Thyristors iT(AV) l*t for Fusing @ 8.3 ms (A*sec x 10*) Vd r m /V r r m 60/300 1.7 800-1600/15 2500 60/300 2.6 4000 8 0/300 [120] 5000 600 [120] 7 c = 9 9 °C 600 [120] 280 Tc = 9 5 eC
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00D1A53
80ation
MAX/10
FG600AH
FG1800AH
FG600AV
FG1000AL
FG1000A
fg2000av
FG1000AH
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Untitled
Abstract: No abstract text available
Text: JT2F D evice 6 Mbit/s JT2 Framer TXC-03702B DATA SHEET Product Preview DESCRIPTION 11 = The JT2 Framer JT2F is a CMOS VLSI device that provides the functions needed to frame a wideband payload to ITU G.704 and the NTT-specified 6312 kbit/s frame format for ATM operation. The JT2F interfaces to
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TXC-03702B
TXC-21047B,
RS-232
TXC-05150,
1DD4152
TXC-03702B-MB
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UC3842C
Abstract: UC3842CD SOP14 package 115VK 16-SUPPLY 371cj LG TV flyback transformer qpcm UC3842A UC3842CS
Text: U C3842A High Perform ance Current M ode Controller T he UC3842A series is high performance fixed Also included are protective features consisting of frequency current mode controllers. This is specifically input and reference undervoltage lockouts each with
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UC3842A
Q0012S3
UC3842C
UC3842CD
SOP14 package
115VK
16-SUPPLY
371cj
LG TV flyback transformer
qpcm
UC3842CS
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PDF
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PCO-7110
Abstract: 65SC150 fa 5542 G65SC150 DTMF Tone Decoder 14PIN 01C0-01FF G65SC00 T2KU ZPG 203
Text: M »/ S E M I C O N D U C T O R DIV HE D • lfl31bM_0 Q O D lHQfl 6 W C A L I T - 7 5 - 9 ^ A G65SC150 C M D Microcircuits_ _ Features General Description • G enerates sig n a ls c o m p a tib le w ith s w itc h e d te le p h o n e ne tw o rks
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31Lj4Q
GGD14Ã
G65SC150
bus30
40-PIN
PCO-7110
65SC150
fa 5542
G65SC150
DTMF Tone Decoder 14PIN
01C0-01FF
G65SC00
T2KU
ZPG 203
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PDF
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CAT24C02A
Abstract: CAT24C02AI
Text: bflE D nb2b^S OOQISbb TBT * C S T CATALYST SEMICONDUCTOR I I I H •III / Preliminary C R T R U r S T S E M I C O N D U C T O R CAT24C02A/CAT24C02AI 2K-Bit SERIAL E2PROM FEATURES ■ l2C Bus Compatible* 100,000 Program/Erase Cycles ■ Low Power CMOS Technology
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CAT24C02A/CAT24C02AI
CAT24C02AZ)
CAT24C02A/CAT24C02AI
QG01S73
CAT24C02A
CAT24C02AI
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PDF
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X65EB
Abstract: BPX-65 BPX65 BPX65R photodetector AX65-R2F
Text: Ultra High Speed Photodiodes BPX-65, AX65-R2F The BPX65 is a high speed, high quality silicon photodetector which is manufactured in large quantity and offers an excellent price-to-performance ratio. Its high frequency response, sen sitivity and low cost make the BPX65 suitable for applications
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BPX-65,
AX65-R2F
BPX65
BPX65R,
450nm
900nm
1064nm
900nm)
Vr-20V)
X65EB
BPX-65
BPX65R
photodetector
AX65-R2F
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PDF
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Untitled
Abstract: No abstract text available
Text: HHITE /M ICRO ELECTRONICS W MF128K8-XXX5 128Kx8 MONOLITHIC FLASH, SMD 5962-96690 FEATURES • Access Tim es of 60, 70, 9 0 ,1 2 0 ,150ns ■ Organized as 128Kx8 ■ Packaging ■ Commercial, Industrial and M ilita ry Tem perature Ranges • 32 lead, Hermetic Ceramic, 0.400" S O J Package 101
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MF128K8-XXX5
128Kx8
150ns
128Kx8
16KByte
04HXX
05HXX
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PDF
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M3135
Abstract: Unicorn Microelectronics lcd UM3135 UM313S lcd 162 abc lcd solar calculator 8 digit 8 digit lcd calculator display b6730 H3885 Unicorn Microelectronics
Text: UNICORN MICR O EL EC TR ONI CS 5ME D • T27fl7flfi GG015Û4 1 ■ ¡ 3 s § V ^ U M = ^ = a 3 1 3 5 8 -Digit Calculator Features ■ Number of digits — 8 digits rough estimate calculation possible . ■ Calculations — Standard four functions (+, - , x,-f).
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GGD15Ã
UM3135
UM3135H
UM3135F
UM3136-1F
M3135
Unicorn Microelectronics lcd
UM3135
UM313S
lcd 162 abc
lcd solar calculator 8 digit
8 digit lcd calculator display
b6730
H3885
Unicorn Microelectronics
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PDF
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7C1025-15
Abstract: 20013 AS7C1025 AS7C31025 ASC310 275mWmax 7C1025
Text: H ig h P erfo rm a n ce 128K x8 CMOS SRAM » A S7C 1 025 A S 7 C 3 102 5 H A 1 2 8 K X 8 CM O S SRAM C o m m o n I / O • T T L - c o m p a tib le , th r e e - s ta te I / O • H ig h s p e e d • 3 2 - p i n JEDEC s ta n d a r d p a c k a g e - 3 0 0 / 4 0 0 m i l SOJ
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AS7C1025
128Kx8
AS7C3102
AS7C31025)
AS7C102S-10JC
AS7C1025-12JC
AS7C1025-15JC
AS7C1025-20JC
AS7C31Ã
7C1025-15
20013
AS7C1025
AS7C31025
ASC310
275mWmax
7C1025
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 TH IS DRAWING IS U N P U B LIS H E D . 3 RELEASED 2 FOR PUBLICATION ALL RIGHTS LOC BY TYCO ELECTRONICS CORPORATION. COPYRIGHT D IST R E V IS IO N S GP 00 RESERVED. LTR L2 562 D IA 3 REVISED PER DWN D E SC RIPTIO N DATE E C 0 -0 6 -0 2 0 8 1 3 300C T06 APVD
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EC0-06-02081
300CT06
21MAY04
31MAR2000
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