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    Text: PHILIPS INTERNATIONAL bSE D • 7110fl2h QQb43.31 432 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. The device Is Intended for use In


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    7110fl2h QQb43 BUK456-1000B T0220AB 7110fi2t. 00b4135 PDF