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    R 0.01 240K Search Results

    R 0.01 240K Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    ZSSC3240KIT Renesas Electronics Corporation Evaluation Kit for ZSSC3240 Visit Renesas Electronics Corporation
    HCS240KMSR Renesas Electronics Corporation CMOS Octal Buffer/Line Driver, Three-State, Inverting Visit Renesas Electronics Corporation
    ACTS240KMSR Renesas Electronics Corporation CMOS Octal Buffer/Line Driver, Three-State, Inverting Visit Renesas Electronics Corporation
    98424-G52-40KLF Amphenol Communications Solutions Header, Surface Mount, Double row, 40, 2mm (0.079in), Vertical Visit Amphenol Communications Solutions

    R 0.01 240K Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    f301 -06

    Abstract: No abstract text available
    Text: Ultra-Precision Resistor Network Case-Encapsulated Composition of Type Number Example: SC 005C 1K000 99K00 B Q 2 1 SC 4 3 1 Type 2 Circuit Symbol 3 Resistance Value (R1) 5 6 4 Resistance Value (Rn) 5 Resistance Tolerance (Absolute) 6 Resistance Tolerance (Matching)


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    1K000 99K00 f301 -06 PDF

    Untitled

    Abstract: No abstract text available
    Text: Precision Resistor Network Conformally Coated Composition of Type Number SE SS Example: SE 004A 1K000 8K000 B A 2 1 5 6 4 Resistance Value (Rn) 5 Resistance Tolerance (Absolute) 6 Resistance Tolerance (Matching) 1 Type 2 Circuit Symbol 3 Resistance Value (R1)


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    1K000 8K000 PDF

    PWC PW-2

    Abstract: HTC Korea metal film fused resistor 125k ohm Molded Axial Leaded capacitor sn 8951 A rbr56 PFC-W2010 rm1206 resistor metal GLAZE 120 ohm 2 1W IRC rlr20
    Text: Short Form Catalog Resistive and Sensor Products Technology for Every Frontier 2 IRC has been an innovative leader in the design, development and manufacture of passive components for more than eighty years. What IRC’s proven resistor technology gives you the performance


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    78411-USA PWC PW-2 HTC Korea metal film fused resistor 125k ohm Molded Axial Leaded capacitor sn 8951 A rbr56 PFC-W2010 rm1206 resistor metal GLAZE 120 ohm 2 1W IRC rlr20 PDF

    Dow corning 7090

    Abstract: SMD transistor Marking 13w smd transistor marking 12W 0.005 ohm 2w 1225 size smd code marking rac SMD CODE rwt 5W 6.8 ohm 12W SMD MARKING CODE HVR 05M SEI RNF resistor Datasheet
    Text: Stackpole Electronics, Inc. Table of Contents Resistive Product Solutions Thick Film Chips Page RMC SERIES RHC SERIES RMCP SERIES RMCS SERIES HMC SERIES HVC SERIES RVC SERIES RPC SERIES FCR SERIES RGC SERIES - General Purpose Thick Film Chip Resistors High Power Thick Film Chip Resistors


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    AD5861

    Abstract: AD5327 AD7802 ADG715 audio ADG752 cmos bandgap reference ADG715 AD8170 ADG729 ADR3913
    Text: Switches, Multiplexers and References The Analog Devices Solutions Bulletin September 1999 LOW VOLTAGE LOW RON performance available… Page 2 WORLD’S LOWEST leakage multiplexer… Page 3 SELECTION GUIDES, key specs… Pages 6–7 LOWEST RON SWITCHES cut distortion…


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    ADG728/ADG729 ADG738/ADG739 ADR290/ADR291/ ADR292/ADR293 ADR290) ADR291) ADR292) ADR293) AD5861 AD5327 AD7802 ADG715 audio ADG752 cmos bandgap reference ADG715 AD8170 ADG729 ADR3913 PDF

    EBG RESISTOR UXP 600

    Abstract: UXP 600 EBG RESISTOR HXP 1 ebg EBG PCS 60 ebg hxp ebg pcs/100 EBG PCS 100 EBG HXP 14 EBG RESISTOR UXP 800
    Text: HIGH VOLTAGE - HIGH POWER - NON INDUCTIVE EN ISO 9001 : 2000 EBG RESISTORS including PRODUCT LINE MTX EBG Austria - Issue 309 In the above spec sheet, you will find our standard product, please contact your local manufacturing representative or call us direct to find out details of other options available regarding this style:


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    Untitled

    Abstract: No abstract text available
    Text: TS2012 Filter-free stereo 2x2.8W class D audio power amplifer Features Four gains select : 6, 12, 18, 24 dB • Low current consumption ■ PSRR: 70dB typ @ 217Hz with 6dB gain. ■ Fast start-up phase: 1ms ■ Thermal shutdown protection ■ QFN20 4x4mm lead-free package


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    TS2012 TS2012IQT QFN20 217Hz QFN20 PDF

    TS2012

    Abstract: JESD97 QFN20 TS2012IQT class D audio power amplifer 0603 footprint FERRITE BEAD INDUCTOR
    Text: TS2012 Filter-free stereo 2x2.8W class D audio power amplifer Features Output power per channel : 1.35W @5V or 0.68W @ 3.6V into 8Ω with 1% THD+N max. • Output power per channel : 2.2W @5V into 4Ω with 1% THD+N max. ■ Four gains select : 6, 12, 18, 24 dB


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    TS2012 TS2012IQT QFN20 217Hz QFN20 19and TS2012 JESD97 class D audio power amplifer 0603 footprint FERRITE BEAD INDUCTOR PDF

    IC1 CA3130 CURRENT TO VOLTAGE CONVERTER

    Abstract: tektronix 2230 CA5130T CA5130M CA3130 CA3130A CA5130 CA5130A CA5130AE CA5130AM
    Text: CA5130 S E M I C O N D U C T O R BiMOS Microprocessor Operational Amplifier with MOSFET Input/CMOS Output March 1993 Features Description • MOSFET Input Stage - Very High Zl . . . . . . . . . . . . . 1.5TΩ 1.5 x 1012Ω Typ. - Very Low ll . . . . . . . . . . . . 5pA Typ. at 15V Operation


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    CA5130 CA5130A CA5130 AN6668 CA3600E* 150mW 50kHz CA3600E) IC1 CA3130 CURRENT TO VOLTAGE CONVERTER tektronix 2230 CA5130T CA5130M CA3130 CA3130A CA5130AE CA5130AM PDF

    CA3130 peak detector

    Abstract: CA3066 CA3085 CA5130M Harris CA3086 CA3130 CA3130A CA5130 CD4007 CA5130AE
    Text: CA5130, CA5130A S E M I C O N D U C T O R NOT RECOMMENDED FOR NEW DESIGNS November 1996 15MHz, BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output Features Description • MOSFET Input Stage - Very High Zl . . . . . . . . . . . . 1.5TΩ 1.5 x 1012Ω (Typ)


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    CA5130, CA5130A 15MHz, CA5130A CA5130 1-800-4-HARRIS CA3130 peak detector CA3066 CA3085 CA5130M Harris CA3086 CA3130 CA3130A CD4007 CA5130AE PDF

    Untitled

    Abstract: No abstract text available
    Text: XR-2211 ¡T E X A R .the analog plus company FSK Demodulator/ Tone Decoder TM April 1 9 9 7-2 APPLICATIONS FEATURES • Wide Frequency Range, 0.01 Hz to 300kHz • Wide Supply Voltage Range, 4.5V to 20V • HCMOS/TTL/Logic Compatibility • FSK Demodulation, with Carrier Detection


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    XR-2211 300kHz 50ppm/Â XR-2211 PDF

    LF155A

    Abstract: sn 357 LF155A/LT EM 257 LF156AN LF356T sn* 357
    Text: LF155/A/156/A/157/A, LF255/256/257, LF355/A/356/A/357/A-T LF155A COMMON FEATURES APPLICATIONS Precision high speed integrators Fast A/D, D/A converters High impedance buffers Wideband, low noise, low drift amplifier EQUIVALENT SCHEMATIC 7 6 o) n ~ ~ I rGi T


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    LF155/A/156/A/157/A, LF255/256/257, LF355/A/356/A/357/A-T LF155, LF155A, LF255, LF355, LF355A LF156, LF156A, LF155A sn 357 LF155A/LT EM 257 LF156AN LF356T sn* 357 PDF

    2N3904 1AM

    Abstract: 2D203 ci 74c14 limit switch ftm IU02
    Text: im o . TECHNOLOGY LTC201A/LTC202/LTC203 Micropower, Low Charge Injection, Quad CMOS Analog Switches FCATURCS DCSCRIPTIOn • Micropower Operation The LT C 2 0 1 A , LTC 20 2 , and LTC 20 3 are micropower, ■ Single 5V or ± 15V Supply Operation ■ Low Charge Injection


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    DG201A/DG202 2N3904 2N3906 120ppm 5V-10V LT1025 LTC201A/LTC202/LTC203 74C14 2N3904 1AM 2D203 ci 74c14 limit switch ftm IU02 PDF

    IC1 CA3130

    Abstract: ca3130 equivalent operational amplifier discrete schematic CD4007 CA5130M tektronix 2230 ca3066 CA3066 LINEAR IC
    Text: H A R R CA5130 IS S E M I C O N D U C T O R BiMOS Microprocessor Operational Amplifier with MOSFET Input/CMOS Output March1993 Features Description • MOSFET Input Stage - Vary High Z ,. 1.5TO 1.5 x 1012£J Typ. - Very Low l | .SpATyp. at 15V Operation


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    CA5130 CA5130A CA5130 100kfl 100ms CA5130, CA5130A 100kH AN6668 IC1 CA3130 ca3130 equivalent operational amplifier discrete schematic CD4007 CA5130M tektronix 2230 ca3066 CA3066 LINEAR IC PDF

    Untitled

    Abstract: No abstract text available
    Text: m CA5130 HARRIS S E M I C O N D U C T O R BiMOS Microprocessor Operational Amplifier with MOSFET Input/CMOS Output Description CA5130A and CA5130 are integrated circuit operational amplifiers that combine the advantage of both CMOS and bipolar transistors on a monolithic chip. They are designed


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    CA5130 CA5130A CA5130 CA5130A, 100ktl 100ms CA5130, CA5130A CA3600E) PDF

    CA3066

    Abstract: CA3088 Pmos transistor 1N814 CA5130M tektronix 2230 adb voltage regulator CD4007 cascode transistor array Harris CA3086
    Text: HARRIS SEIIICON] SECTOR H A R R • 4302271 OOMbB^O BTT « H A S CA5130 IS SEMICONDUCTOR BiMOS Microprocessor Operational Amplifier with MOSFET Input/CMOS Output March 1993 Features Description • MOSFET input Stag« . Vary High Z ,.1.5TO 1.5 x 1012a )iyp .


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    M3DS571 CA5130 CA5130A, CA5130 CA5130, CA5130A 100kHz AN66M CA3066 CA3088 Pmos transistor 1N814 CA5130M tektronix 2230 adb voltage regulator CD4007 cascode transistor array Harris CA3086 PDF

    n608

    Abstract: CA3066 4007A Transistor 4007A
    Text: ¡as HARRIS CA5130, CA5130A S E M I C O N D U C T O R w NOT R E C O M M E N D E D FOR NEW D ESIG NS November 1996 . m W ^ 7 ^ m . ~ 15M Hz, B iM O S M ic ro processor Operational A m p l i f i e r s with M O S F E T I n p u t / C M O S O u t p u t Features


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    CA5130, CA5130A CA5130A CA5130 n608 CA3066 4007A Transistor 4007A PDF

    contrans

    Abstract: TA1211N digital analog convertor hbcq
    Text: TO SHIBA TA1211N TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT T A 1 2 1 SILICON MONOLITHIC 1 N Bi-SCANABLE RGB PROCESSOR TA1211N is the RGB processing IC coping with bi-scan system. This IC converts Y / l/ Q or Y / U / V signals to R/G /B. To cope with bi-scan, this IC has wide Y band. And


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    TA1211N ta121 TA1211N 300kfà 110kfà 470kfà 068//F SDIP54-P-600-1 contrans digital analog convertor hbcq PDF

    s41 645

    Abstract: hbcq HBC01 p53a TA1211N TP41A V3511 SDIP54-P-600-1 SDIP54-P-600 ADG23
    Text: TO SH IBA TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT T A 121 1 SILICON MONOLITHIC N Bi-SCANABLE RGB PROCESSOR TA1211N is the RGB processing IC coping with bi-scan system. This IC converts Y / l/ Q or Y / U / V signals to R/G


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    TA1211N TA1211N s41 645 hbcq HBC01 p53a TP41A V3511 SDIP54-P-600-1 SDIP54-P-600 ADG23 PDF

    Untitled

    Abstract: No abstract text available
    Text: ANALOG D E V IC E S CMOS Low Voltage 4 i l Quad SPST Switches ADG711/ADG712/ADG713 FUNCTIONAL BLOCK DIAGRAMS FEATURES +1.8 V to +5.5 V Single Supply Low On Resistance 2.5 i l Typ Low On-Resistance Flatness -3 dB B andwidth > 200 MHz Rail-to-Rail Operation


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    ADG711/ADG712/ADG713 16-Lead R-16A) PDF

    Untitled

    Abstract: No abstract text available
    Text: ANALO G D E V IC E S CMOS Low Voltage 4 i l Quad SPST Switches ADG711/ADG712/ADG713 FUNCTIONAL BLOCK DIAGRAMS FEATURES +1.8 V to +5.5 V S in gle Su p p ly Low On Resistance 2.5 i l Typ Low O n-Resistance Flatness -3 dB Ban dw idth > 200 M H z Rail-to-Rail Operation


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    16-Lead ADG711/ADG712/ADG713 R-16A) RU-16) PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TA12 11 N TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA 121 1N Bi-SCANABLE RGB PROCESSOR TA1211N is the RGB processing IC coping with bi-scan system. This IC converts Y / l/ Q or Y / U / V signals to R/G /B. To cope with bi-scan, this IC has w ide Y band. And


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    TA1211N 068//F 10/uF SDIP54-P-600-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: i f P ^ n E A D S-917 I U 1MHz, 14-Bit, Low-Power Sampling A/D Converter INNOVATION and EXCELLENCE FEATURES ^ v • • • • • • • • 14-Bit resolution 1MHz sampling rate No missing codes Functionally complete Small 24-pin DDIP Low power, 1.9 Watts maximum


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    S-917 14-Bit, 14-Bit 24-pin ADS-917 -80dB. 2b515bl 0002bDfl PDF

    Untitled

    Abstract: No abstract text available
    Text: □ M A D S -9 1 6 500kHz, 14-Bit, Low-Power Sampling A/D Converter n IN N O V A T IO N a n d E X C E L L E N C E FEATURES • • • • • • • • 14-Bit resolution 500kHz sampling rate No missing codes Functionally complete Small 24-pin DDIP Low power, 1.8 Watts maximum


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    500kHz, 14-Bit, 14-Bit 500kHz 24-pin ADS-916 -90dB PDF