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Catalog Datasheet	MFG & Type	PDF	Document Tags
rjh60d2 Abstract: No abstract text available Text: Preliminary Datasheet RJH60D2DPE Silicon N Channel IGBT Application: Inverter R07DS0159EJ0300 Rev.3.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)	Original	PDF	RJH60D2DPE R07DS0159EJ0300 PRSS0004AE-B rjh60d2

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rjh60d2

Abstract: No abstract text available
Text: Preliminary Datasheet RJH60D2DPE Silicon N Channel IGBT Application: Inverter R07DS0159EJ0300 Rev.3.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)

Original

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RJH60D2DPE R07DS0159EJ0300 PRSS0004AE-B rjh60d2