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Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJH60D6DPK Silicon N Channel IGBT Application: Inverter R07DS0164EJ0300 Rev.3.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)	Original	RJH60D6DPK R07DS0164EJ0300 PRSS0004ZE-A	PDF

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Abstract: No abstract text available
Text: Preliminary Datasheet RJH60D6DPK Silicon N Channel IGBT Application: Inverter R07DS0164EJ0300 Rev.3.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)

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RJH60D6DPK R07DS0164EJ0300 PRSS0004ZE-A

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