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    RJP60D0DPP-M0

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60D0DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0173EJ0100 Rev.1.00 Mar 11, 2011 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJP60D0DPP-M0 R07DS0173EJ0100 PRSS0003AF-A) O-220FL) RJP60D0DPP-M0

    rjp60d0dpp

    Abstract: RJP60D0DPP-M0
    Text: Preliminary Datasheet RJP60D0DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0173EJ0100 Rev.1.00 Mar 11, 2011 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJP60D0DPP-M0 R07DS0173EJ0100 PRSS0003AF-A) O-220FL) rjp60d0dpp RJP60D0DPP-M0