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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet HAT2203C R07DS0323EJ0500 Previous: REJ03G0447-0400 Rev.5.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 69 m typ.(at VGS = 4.5 V)  Low drive current  High density mounting


    Original     		PDF HAT2203C R07DS0323EJ0500 REJ03G0447-0400) PWSF0006JA-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet HAT2203C R07DS0323EJ0500 Previous: REJ03G0447-0400 Rev.5.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 69 m typ.(at VGS = 4.5 V)  Low drive current  High density mounting


    Original     		PDF HAT2203C R07DS0323EJ0500 REJ03G0447-0400) PWSF0006JA-A