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    HAT2203C Search Results

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    HAT2203C-EL-E Renesas Electronics Corporation Nch Single Power Mosfet 20V 2A 90Mohm Cmfpak6 Visit Renesas Electronics Corporation
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    HAT2203C Price and Stock

    Renesas Electronics Corporation HAT2203C-EL-E

    Transistor MOSFET N-Channel 20V 2A 6-Pin CMFPAK T/R - Product that comes on tape, but is not reeled (Alt: HAT2203C-EL-E)
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    Avnet Americas HAT2203C-EL-E Ammo Pack 4 Weeks 1,445
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    Rochester Electronics HAT2203C-EL-E 9,000 1
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    Intersil Corporation HAT2203C-EL-E

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    Quest Components HAT2203C-EL-E 2,212
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    HAT2203C Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HAT2203C Renesas Technology Transistors> Switching/MOSFETs Original PDF

    HAT2203C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HAT2203C

    Abstract: HAT2203C-EL-E
    Text: HAT2203C Silicon N Channel MOS FET Power Switching REJ03G0447-0400 Rev.4.00 May 19.2005 Features • Low on-resistance RDS on = 69 mΩ typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 2.5 V gate drive device Outline RENESAS Package code: PWSF0006JA-A


    Original     		PDF HAT2203C REJ03G0447-0400 PWSF0006JA-A Note-900 Unit2607 HAT2203C HAT2203C-EL-E

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet HAT2203C R07DS0323EJ0600 Rev.6.00 Mar 19, 2014 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS on = 69 mΩ typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 2.5 V gate drive device


    Original     		PDF HAT2203C R07DS0323EJ0600 PWSF0006JA-A N2886-9022/9044

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet HAT2203C R07DS0323EJ0500 Previous: REJ03G0447-0400 Rev.5.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 69 m typ.(at VGS = 4.5 V)  Low drive current  High density mounting


    Original     		PDF HAT2203C R07DS0323EJ0500 REJ03G0447-0400) PWSF0006JA-A

    HAT2203C

    Abstract: HAT2203C-EL-E
    Text: HAT2203C Silicon N Channel MOS FET Power Switching REJ03G0447-0300 Rev.3.00 Sep.19.2004 Features • Low on-resistance RDS on = 69 mΩ typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 2.5 V gate drive device Outline CMFPAK - 6 2 3 4 5


    Original     		PDF HAT2203C REJ03G0447-0300 t-900 Unit2607 HAT2203C HAT2203C-EL-E

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet HAT2203C R07DS0323EJ0500 Previous: REJ03G0447-0400 Rev.5.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 69 m typ.(at VGS = 4.5 V)  Low drive current  High density mounting


    Original     		PDF HAT2203C R07DS0323EJ0500 REJ03G0447-0400) PWSF0006JA-A

    HAT2203C-EL-E

    Abstract: HAT2204C
    Text: HAT2204C Silicon N Channel MOS FET Power Switching REJ03G0448-0300 Rev.3.00 Sep.19.2004 Features • Low on-resistance RDS on = 26m Ω typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 1.8 V gate drive device Outline CMFPAK - 6 2 3 4 5


    Original     		PDF HAT2204C REJ03G0448-0300 t-900 Unit2607 HAT2203C-EL-E HAT2204C

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original     		PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


    Original     		PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    rjh60f5

    Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK
    Text: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.


    Original     		PDF REJ13G0003-2701 rjh60f5 RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK

    HAT2203C

    Abstract: HAT2203C-EL-E
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF d-900 Unit2607 HAT2203C HAT2203C-EL-E

    temperature controller CHB 401

    Abstract: 1FW 55 transistor 1FW transistor 1FW 10 transistor
    Text: Power Supply IC S1F81150F*C0000 Technical Manual f NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.


    Original     		PDF S1F81150F C0000 temperature controller CHB 401 1FW 55 transistor 1FW transistor 1FW 10 transistor

    H7N1009MD

    Abstract: HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as
    Text: Power-Device Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors Products April, 2004 Standard Product Business Group Discrete and Standerd IC Business Unit Renesas Technology Corp. Power-Device Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility


    Original     		PDF CR3KM-12 CR6KM-12 CR8KM-12 O-220FN OT-89 CR03AM-16 CR04AM-12 SC-59 CR03AM-12 CR05AM-12 H7N1009MD HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as

    Untitled

    Abstract: No abstract text available
    Text: HAT2204C Silicon N Channel MOS FET Power Switching REJ03G0448-0400 Rev.4.00 May 19.2005 Features • Low on-resistance RDS on = 26m Ω typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 1.8 V gate drive device Outline RENESAS Package code: PWSF0006JA-A


    Original     		PDF HAT2204C REJ03G0448-0400 PWSF0006JA-A Unit2607