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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQA0009TXDQS R07DS0492EJ0200 Previous: REJ03G1520-0100 Rev.2.00 Jun 28, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz)


    Original     		PDF RQA0009TXDQS R07DS0492EJ0200 REJ03G1520-0100) PLZZ0004CA-A

    RQA0009

    Abstract: 17-33 0952
    Text: Preliminary Datasheet RQA0009TXDQS R07DS0492EJ0200 Previous: REJ03G1520-0100 Rev.2.00 Jun 28, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz)


    Original     		PDF RQA0009TXDQS R07DS0492EJ0200 REJ03G1520-0100) PLZZ0004CA-A RQA0009 17-33 0952