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    RQA0009 Search Results

    RQA0009 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    RQA0009TXDQS#H1 Renesas Electronics Corporation N-Channel MOSFET Visit Renesas Electronics Corporation
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    Renesas Electronics Corporation RQA0009TXDQS-H1

    MOSFET N-CH 16V 3.2A UPAK
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    Renesas Electronics Corporation RQA0009SXAQS-H1

    MOSFET N-CH 16V 3.2A UPAK
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    Renesas Electronics Corporation RQA0009TXDQS#H1

    RQA0009TXDQS - N-Channel MOSFET '
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    Rochester Electronics RQA0009TXDQS#H1 3,100 1
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    Renesas Electronics Corporation RQA0009SXAQS

    Silicon N-Channel MOS FET
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    Win Source Electronics RQA0009SXAQS 27,980
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    RQA0009 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RQA0009SXAQS Renesas Technology Silicon N-Channel MOS FET Original PDF
    RQA0009SXTL-E Renesas Technology Silicon N-Channel MOS FET Original PDF
    RQA0009TXDQS Renesas Technology Silicon N-Channel MOS FET Original PDF
    RQA0009TXDQS#H1 Renesas Electronics MOSFET N-CH 16V 3.2A UPAK Original PDF
    RQA0009TXTL-E Renesas Technology Silicon N-Channel MOS FET Original PDF

    RQA0009 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RQA0009SXAQS

    Abstract: RQA0009 RQA0009SXTL-E RQA0009SX c5 marking code 1747 C13
    Text: RQA0009SXAQS Silicon N-Channel MOS FET REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% VDS = 6 V, f = 520 MHz • Compact package capable of surface mounting


    Original     		PDF RQA0009SXAQS REJ03G1566-0100 PLZZ0004CA-A RQA0009SXAQS RQA0009 RQA0009SXTL-E RQA0009SX c5 marking code 1747 C13

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQA0009TXDQS R07DS0492EJ0200 Previous: REJ03G1520-0100 Rev.2.00 Jun 28, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz)


    Original     		PDF RQA0009TXDQS R07DS0492EJ0200 REJ03G1520-0100) PLZZ0004CA-A

    17-33 0952

    Abstract: RQA0009 RQA0009SXTL-E R07DS0493EJ0200
    Text: Preliminary Datasheet RQA0009SXAQS R07DS0493EJ0200 Previous: REJ03G1566-0100 Rev.2.00 Jun 28, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz)


    Original     		PDF RQA0009SXAQS R07DS0493EJ0200 REJ03G1566-0100) PLZZ0004CA-A 17-33 0952 RQA0009 RQA0009SXTL-E R07DS0493EJ0200

    RQA0009TXDQS

    Abstract: RQA0009 RQA0009TXTL-E REJ03G1520-0100
    Text: RQA0009TXDQS Silicon N-Channel MOS FET REJ03G1520-0100 Rev.1.00 Jul 04, 2007 Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% VDS = 6 V, f = 520 MHz • Compact package capable of surface mounting


    Original     		PDF RQA0009TXDQS REJ03G1520-0100 PLZZ0004CA-A RQA0009TXDQS RQA0009 RQA0009TXTL-E REJ03G1520-0100

    RQA0009

    Abstract: 17-33 0952
    Text: Preliminary Datasheet RQA0009TXDQS R07DS0492EJ0200 Previous: REJ03G1520-0100 Rev.2.00 Jun 28, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz)


    Original     		PDF RQA0009TXDQS R07DS0492EJ0200 REJ03G1520-0100) PLZZ0004CA-A RQA0009 17-33 0952

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606

    RQA0009

    Abstract: RQA0009TXDQS RQA0009TXTL-E
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    RQA0009

    Abstract: RQA0009SXTL-E RQA0009SXAQS
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


    Original     		PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009