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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60F5DPM 600V - 40A - IGBT High Speed Power Switching R07DS0587EJ0200 Rev.2.00 May 31, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology


    Original     		PDF RJP60F5DPM R07DS0587EJ0200 PRSS0003ZA-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60F5DPM 600V - 40A - IGBT High Speed Power Switching R07DS0587EJ0200 Rev.2.00 May 31, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology


    Original     		PDF RJP60F5DPM R07DS0587EJ0200 PRSS0003ZA-A