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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0602DPN-E0 R07DS0653EJ0100 Rev.1.00 Jul 27, 2012 N-Channel MOS FET 60 V, 100 A, 3.9 m Features •    High speed switching Low drive current Low on-resistance RDS on = 3.1 m typ. (at VGS = 10 V) Package TO-220AB Outline


    Original     		PDF RJK0602DPN-E0 R07DS0653EJ0100 O-220AB PRSS0004AC-A O-220AB)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0602DPN-E0 R07DS0653EJ0100 Rev.1.00 Jul 27, 2012 N-Channel MOS FET 60 V, 100 A, 3.9 m Features •    High speed switching Low drive current Low on-resistance RDS on = 3.1 m typ. (at VGS = 10 V) Package TO-220AB Outline


    Original     		PDF RJK0602DPN-E0 O-220AB R07DS0653EJ0100 PRSS0004AC-A O-220AB)