T1R rf
Abstract: No abstract text available
Text: Data Sheet NESG7030M04 R09DS0037EJ0100 Rev.1.00 Apr 18, 2012 NPN Silicon Germanium Carbon RF Transistor FEATURES • The device is an ideal choice for low noise, high gain amplification. NF = 0.75 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz Ga = 14 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz
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NESG7030M04
R09DS0037EJ0100
T1R rf
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PDF
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S parameters of 5.8 GHz transistor
Abstract: NESG7030M04 T1R rf ZL 58
Text: A Business Partner of Renesas Electronics Corporation. NESG7030M04 Data Sheet R09DS0037EJ0100 Rev.1.00 Apr 18, 2012 NPN Silicon Germanium Carbon RF Transistor FEATURES • The device is an ideal choice for low noise, high gain amplification. NF = 0.75 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz
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Original
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NESG7030M04
R09DS0037EJ0100
NESG7030M04
S parameters of 5.8 GHz transistor
T1R rf
ZL 58
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PDF
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